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Naveen Karumuri
Naveen Karumuri
Globalfoundries || IIT Madras
在 globalfoundries.com 的电子邮件经过验证
标题
引用次数
引用次数
年份
Gate leakage mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: comparison and modeling
S Turuvekere, N Karumuri, AA Rahman, A Bhattacharya, A DasGupta, ...
IEEE Transactions on electron devices 60 (10), 3157-3165, 2013
2662013
Positive Shift in Threshold Voltage for Reactive-Ion- Sputtered Al2O3/AlInN/GaN MIS-HEMT
G Dutta, S Turuvekere, N Karumuri, N DasGupta, A DasGupta
IEEE Electron Device Letters 35 (11), 1085-1087, 2014
642014
A continuous analytical model for 2-DEG charge density in AlGaN/GaN HEMTs valid for all bias voltages
N Karumuri, S Turuvekere, N DasGupta, A DasGupta
IEEE Transactions on Electron Devices 61 (7), 2343-2349, 2014
532014
A compact model of drain current for GaN HEMTs based on 2-DEG charge linearization
N Karumuri, G Dutta, N DasGupta, A DasGupta
IEEE Transactions on Electron Devices 63 (11), 4226-4232, 2016
292016
Modeling and analysis of normally-OFF p-GaN gate AlGaN/GaN HEMT as an ON-chip capacitor
A Abdulsalam, N Karumuri, G Dutta
IEEE Transactions on Electron Devices 67 (9), 3536-3540, 2020
242020
An analytical charge control model for AlGaN/GaN HEMT including the gate bias dependence on polarization charge
N Karumuri, T Sreenidhi, N DasGupta, A DasGupta
2012 International Conference on Emerging Electronics, 1-4, 2012
62012
Symmetric BSIM-SOI—Part I: A compact model for dynamically depleted SOI MOSFETs
CK Dabhi, D Rajasekharan, G Pahwa, D Nandi, N Karumuri, ...
IEEE Transactions on Electron Devices, 2024
22024
Validation of Dynamically Depleted Symmetric BSIM-SOI Compact model for RF SOI T/R Switch Applications
D Nandi, CK Dabhi, D Rajasekaran, N Karumuri, S Turuvekere, ...
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024
2024
Symmetric BSIM-SOI—Part II: A Compact Model for Partially Depleted SOI MOSFETs
CK Dabhi, D Nandi, K Nandan, D Rajasekharan, G Pahwa, N Karumuri, ...
IEEE Transactions on Electron Devices, 2024
2024
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