Gate leakage mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: comparison and modeling S Turuvekere, N Karumuri, AA Rahman, A Bhattacharya, A DasGupta, ... IEEE Transactions on electron devices 60 (10), 3157-3165, 2013 | 266 | 2013 |
Positive Shift in Threshold Voltage for Reactive-Ion- Sputtered Al2O3/AlInN/GaN MIS-HEMT G Dutta, S Turuvekere, N Karumuri, N DasGupta, A DasGupta IEEE Electron Device Letters 35 (11), 1085-1087, 2014 | 64 | 2014 |
A continuous analytical model for 2-DEG charge density in AlGaN/GaN HEMTs valid for all bias voltages N Karumuri, S Turuvekere, N DasGupta, A DasGupta IEEE Transactions on Electron Devices 61 (7), 2343-2349, 2014 | 53 | 2014 |
A compact model of drain current for GaN HEMTs based on 2-DEG charge linearization N Karumuri, G Dutta, N DasGupta, A DasGupta IEEE Transactions on Electron Devices 63 (11), 4226-4232, 2016 | 29 | 2016 |
Modeling and analysis of normally-OFF p-GaN gate AlGaN/GaN HEMT as an ON-chip capacitor A Abdulsalam, N Karumuri, G Dutta IEEE Transactions on Electron Devices 67 (9), 3536-3540, 2020 | 24 | 2020 |
An analytical charge control model for AlGaN/GaN HEMT including the gate bias dependence on polarization charge N Karumuri, T Sreenidhi, N DasGupta, A DasGupta 2012 International Conference on Emerging Electronics, 1-4, 2012 | 6 | 2012 |
Symmetric BSIM-SOI—Part I: A compact model for dynamically depleted SOI MOSFETs CK Dabhi, D Rajasekharan, G Pahwa, D Nandi, N Karumuri, ... IEEE Transactions on Electron Devices, 2024 | 2 | 2024 |
Validation of Dynamically Depleted Symmetric BSIM-SOI Compact model for RF SOI T/R Switch Applications D Nandi, CK Dabhi, D Rajasekaran, N Karumuri, S Turuvekere, ... 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024 | | 2024 |
Symmetric BSIM-SOI—Part II: A Compact Model for Partially Depleted SOI MOSFETs CK Dabhi, D Nandi, K Nandan, D Rajasekharan, G Pahwa, N Karumuri, ... IEEE Transactions on Electron Devices, 2024 | | 2024 |