| Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy E Feltin, B Beaumont, M Laügt, P De Mierry, P Vennéguès, H Lahreche, ... Applied Physics Letters 79 (20), 3230-3232, 2001 | 372 | 2001 |
| Epitaxial lateral overgrowth of GaN B Beaumont, P Vennéguès, P Gibart physica status solidi (b) 227 (1), 1-43, 2001 | 329 | 2001 |
| Physical characterization of molybdenum oxycarbide catalyst; TEM, XRD and XPS P Delporte, C Pham-Huu, P Vennegues, MJ Ledoux, J Guille Catalysis today 23 (3), 251-267, 1995 | 273 | 1995 |
| Reduction mechanisms for defect densities in GaN using one-or two-step epitaxial lateral overgrowth methods P Vennéguès, B Beaumont, V Bousquet, M Vaille, P Gibart Journal of Applied Physics 87 (9), 4175-4181, 2000 | 237 | 2000 |
| Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (1 1 1) H Lahreche, P Vennéguès, O Tottereau, M Laügt, P Lorenzini, M Leroux, ... Journal of crystal growth 217 (1-2), 13-25, 2000 | 172 | 2000 |
| Influence of in situ sapphire surface preparation and carrier gas on the growth mode of GaN in MOVPE P Vennéguès, B Beaumont, S Haffouz, M Vaille, P Gibart Journal of crystal growth 187 (2), 167-177, 1998 | 172 | 1998 |
| Growth of high-quality GaN by low-pressure metal-organic vapour phase epitaxy (LP-MOVPE) from 3D islands and lateral overgrowth H Lahreche, P Vennegues, B Beaumont, P Gibart Journal of Crystal Growth 205 (3), 245-252, 1999 | 165 | 1999 |
| Pyramidal defects in metalorganic vapor phase epitaxial Mg doped GaN P Vennéguès, M Benaissa, B Beaumont, E Feltin, P De Mierry, ... Applied Physics Letters 77 (6), 880-882, 2000 | 148 | 2000 |
| Defect characterization in ZnO layers grown by plasma-enhanced molecular-beam epitaxy on (0001) sapphire substrates F Vigue, P Vennegues, S Vezian, M Laügt, JP Faurie Applied Physics Letters 79 (2), 194-196, 2001 | 134 | 2001 |
| Luminescence and reflectivity studies of undoped, n-and p-doped GaN on (0001) sapphire M Leroux, B Beaumont, N Grandjean, P Lorenzini, S Haffouz, ... Materials Science and Engineering: B 50 (1-3), 97-104, 1997 | 127 | 1997 |
| Polarity control in group-III nitrides beyond pragmatism S Mohn, N Stolyarchuk, T Markurt, R Kirste, MP Hoffmann, R Collazo, ... Physical Review Applied 5 (5), 054004, 2016 | 125 | 2016 |
| Cathodoluminescence spectroscopy of epitaxial-lateral-overgrown nonpolar (11-20) and semipolar (11-22) GaN in relation to microstructural characterization T Gühne, Z Bougrioua, P Vennéguès, M Leroux, M Albrecht Journal of applied physics 101 (11), 2007 | 124 | 2007 |
| Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks JM Bethoux, P Vennéguès, F Natali, E Feltin, O Tottereau, G Nataf, ... Journal of applied physics 94 (10), 6499-6507, 2003 | 115 | 2003 |
| The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy S Haffouz, H Lahreche, P Vennéguès, P De Mierry, B Beaumont, ... Applied physics letters 73 (9), 1278-1280, 1998 | 114 | 1998 |
| Atomic structure of pyramidal defects in Mg-doped GaN P Vennéguès, M Leroux, S Dalmasso, M Benaissa, P De Mierry, ... Physical Review B 68 (23), 235214, 2003 | 103 | 2003 |
| Catalytic unzipping of carbon nanotubes to few-layer graphene sheets under microwaves irradiation I Janowska, O Ersen, T Jacob, P Vennégues, D Bégin, MJ Ledoux, ... Applied Catalysis A: General 371 (1-2), 22-30, 2009 | 94 | 2009 |
| Polarity inversion of GaN (0 0 0 1) by a high Mg doping S Pezzagna, P Vennéguès, N Grandjean, J Massies Journal of Crystal Growth 269 (2-4), 249-256, 2004 | 94 | 2004 |
| Molecular-beam epitaxy of gallium nitride on (0001) sapphire substrates using ammonia N Grandjean, J Massies, P Vennegues, M Leroux, F Demangeot, ... Journal of applied physics 83 (3), 1379-1383, 1998 | 90 | 1998 |
| Microstructural characterization of semipolar GaN templates and epitaxial-lateral-overgrown films deposited on m-plane sapphire by metalorganic vapor phase epitaxy P Vennegues, Z Bougrioua, T Guehne Japanese Journal of Applied Physics 46 (7R), 4089, 2007 | 89 | 2007 |
| Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy B Beaumont, M Vaille, G Nataf, A Bouillé, JC Guillaume, P Vennégues, ... Materials Research Society Internet Journal of Nitride Semiconductor …, 1998 | 83 | 1998 |
Benjamin DamilanoCRHEA-CNRS在 crhea.cnrs.fr 的电子邮件经过验证
