| Overview of emerging nonvolatile memory technologies JS Meena, SM Sze, U Chand, TY Tseng Nanoscale research letters 9, 1-33, 2014 | 900 | 2014 |
| All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration M Sivan, Y Li, H Veluri, Y Zhao, B Tang, X Wang, E Zamburg, JF Leong, ... Nature communications 10 (1), 5201, 2019 | 142 | 2019 |
| Metal oxide resistive switching memory: materials, properties and switching mechanisms D Kumar, R Aluguri, U Chand, TY Tseng Ceramics International 43, S547-S556, 2017 | 140 | 2017 |
| Forming-free bipolar resistive switching in nonstoichiometric ceria films M Ismail, CY Huang, D Panda, CJ Hung, TL Tsai, JH Jieng, CA Lin, ... Nanoscale research letters 9, 1-8, 2014 | 100 | 2014 |
| Suppression of endurance degradation by utilizing oxygen plasma treatment in HfO2 resistive switching memory U Chand, CY Huang, JH Jieng, WY Jang, CH Lin, TY Tseng Applied Physics Letters 106 (15), 2015 | 84 | 2015 |
| Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer U Chand, KC Huang, CY Huang, TY Tseng IEEE Transactions on Electron Devices 62 (11), 3665-3670, 2015 | 77 | 2015 |
| Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layer D Kumar, R Aluguri, U Chand, TY Tseng Applied Physics Letters 110 (20), 2017 | 75 | 2017 |
| Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing M Ismail, U Chand, C Mahata, J Nebhen, S Kim Journal of Materials Science & Technology 96, 94-102, 2022 | 72 | 2022 |
| High-Performance TiN/Al2O3/ZnO/Al2O3/TiN Flexible RRAM Device With High Bending Condition D Kumar, U Chand, LW Siang, TY Tseng IEEE Transactions on Electron Devices 67 (2), 493-498, 2020 | 57 | 2020 |
| Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO 2 Gate Dielectric and Excellent Uniformity S Samanta*, U Chand*, S Xu, K Han, Y Wu, C Wang, A Kumar, H Velluri, ... IEEE Electron Device Letters 41 (6), 856-859, 2020 | 56 | 2020 |
| Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structure U Chand, KC Huang, CY Huang, CH Ho, CH Lin, TY Tseng Journal of Applied Physics 117 (18), 2015 | 52 | 2015 |
| Mechanism of High Temperature Retention Property (up to 200 °C) in ZrO2-Based Memory Device With Inserting a ZnO Thin Layer U Chand, CY Huang, TY Tseng IEEE Electron Device Letters 35 (10), 1019-1021, 2014 | 40 | 2014 |
| Effect of different synthesis techniques on structural, magnetic and magneto-transport properties of Pr0. 7Sr0. 3MnO3 manganite U Chand, K Yadav, A Gaur, GD Varma Journal of Rare Earths 28 (5), 760-764, 2010 | 39 | 2010 |
| Room-temperature fabricated, fully transparent resistive memory based on ITO/CeO2/ITO structure for RRAM applications M Ismail, AM Rana, I Talib, TL Tsai, U Chand, E Ahmed, MY Nadeem, ... Solid State Communications 202, 28-34, 2015 | 37 | 2015 |
| Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architecture U Chand, CY Huang, D Kumar, TY Tseng Applied Physics Letters 107 (20), 2015 | 35 | 2015 |
| One bipolar selector-one resistor for flexible crossbar memory applications D Kumar, R Aluguri, U Chand, TY Tseng IEEE Transactions on Electron Devices 66 (3), 1296-1301, 2019 | 31 | 2019 |
| Conductive bridge random access memory characteristics of SiCN based transparent device due to indium diffusion D Kumar, R Aluguri, U Chand, TY Tseng Nanotechnology 29 (12), 125202, 2018 | 29 | 2018 |
| ZrN-based flexible resistive switching memory D Kumar, U Chand, LW Siang, TY Tseng IEEE Electron Device Letters 41 (5), 705-708, 2020 | 27 | 2020 |
| Resistive switching characteristics of Pt/CeOx/TiN memory device M Ismail, I Talib, CY Huang, CJ Hung, TL Tsai, JH Jieng, U Chand, CA Lin, ... Japanese Journal of Applied Physics 53 (6), 060303, 2014 | 19 | 2014 |
| Stress-memorized HZO for high-performance ferroelectric field-effect memtransistor SH Tsai, Z Fang, X Wang, U Chand, CK Chen, S Hooda, M Sivan, J Pan, ... ACS Applied Electronic Materials 4 (4), 1642-1650, 2022 | 18 | 2022 |
