Evaluation of 10-nm bulk FinFET RF performance—Conventional versus NC-FinFET R Singh, K Aditya, SS Parihar, YS Chauhan, R Vega, TB Hook, A Dixit IEEE Electron Device Letters 39 (8), 1246-1249, 2018 | 58 | 2018 |
3-D LER and RDF matching performance of nanowire FETs in inversion, accumulation, and junctionless modes AK Bansal, C Gupta, A Gupta, R Singh, TB Hook, A Dixit IEEE Transactions on Electron Devices 65 (3), 1246-1252, 2018 | 38 | 2018 |
Experimental Evaluation of Self-Heating and Analog/RF FOM in GAA-Nanowire FETs R Singh, K Aditya, A Veloso, B Parvais, A Dixit IEEE Transactions on Electron Devices 66 (8), 10.1109/TED.2019.2924439, 2019 | 18 | 2019 |
Analytical modeling of parasitic capacitance in inserted-oxide FinFETs R Singh, A Gupta, C Gupta, AK Bansal, TB Hook, A Dixit IEEE Transactions on Electron Devices 64 (12), 5274-5278, 2017 | 12 | 2017 |
7-nm Nanowire FET process variation modeling using industry standard BSIM-CMG model R Singh, K Aditya, AK Bansal, PA Chanawala, TB Hook, A Dixit 2016 3rd International Conference on Emerging Electronics (ICEE), 1-4, 2016 | 9 | 2016 |
Impact of Gamma-Ray Radiation on DC and RF Performance of 10-nm Bulk N-Channel FinFETs K Aditya, R Singh, M Kumar, R Vega, A Dixit IEEE Transactions on Device and Materials Reliability 20 (4), 760-766, 2020 | 7 | 2020 |
Effect of Post Radiation Annealing on the TID Response of 0.18 μm bulk NFETs K Aditya, M Kumar, CK Jha, R Singh, P Yogi, S Basra, HS Jatana, A Dixit 2019 Electron Devices Technology and Manufacturing Conference (EDTM), 336-338, 2019 | 5 | 2019 |
Characterization and Global Parameter Extraction of bulk MOSFETs using BSIM-BULK Model SS Parihar, C Jha, R Singh, R Gurjar, A Dixit 2018 5th IEEE Uttar Pradesh Section International Conference on Electrical …, 2018 | 5 | 2018 |
Characterization and modeling of N-channel bulk FinFETs from DC to high frequency R Singh, P Kushwaha, S Ghosh, B Parvais, YS Chauhan, A Dixit 2017 International Conference on Electron Devices and Solid-State Circuits …, 2017 | 3 | 2017 |
SEU Sensitivity of a 14-nm SOI FinFET eDRAM Cell under Heavy-ion Irradiation K Aditya, R Saini, M Kumar, R Singh, A Dixit 2018 4th IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2018 | 2 | 2018 |
Superior Transient Response to Heavy-Ion Irradiation by N-Channel SOI-iFinFETs K Aditya, R Singh, AK Bansal, R Saini, A Gupta, A Dixit IETE Journal of Research, 1-7, 2019 | 1 | 2019 |
An investigation of reliability and variability issues in nanoscale SOI and multi-gate MOSFETs: modelling, simulation and characterization AD Manoj Kumar, Kritika Aditya, Ramendra Singh, Ishita Jain, Anshul Gupta CSI Transactions on ICT, 2277-9078, 2019 | 1* | 2019 |
Impact of SOI thickness scaling on alpha-particle irradiation performance of MOSFETs K Aditya, R Saini, R Singh, CK Jha, A Dixit 2017 International Conference on Electron Devices and Solid-State Circuits …, 2017 | 1 | 2017 |
Nanowire FET DC Parameter Extraction using BSIM-CMG Model AD Ramendra Singh, Anil K. Bansal, Ishita Jain 18th International Workshop on Physics of Semiconductor Devices, IISc …, 2015 | | 2015 |