| Crystal-orientation effects on the piezoelectric field and electronic properties of strained wurtzite semiconductors SH Park, SL Chuang Physical Review B 59 (7), 4725, 1999 | 413 | 1999 |
| Theory and experiment of In Ga As P and In Ga Al As long-wavelength strained quantum-well lasers J Minch, SH Park, T Keating, SL Chuang IEEE J. Quantum Electron 35 (5), 771-782, 1999 | 301 | 1999 |
| Comparison of zinc-blende and wurtzite GaN semiconductors with spontaneous polarization and piezoelectric field effects SH Park, SL Chuang Journal of Applied Physics 87 (1), 353-364, 2000 | 296 | 2000 |
| Piezoelectric effects on electrical and optical properties of wurtzite GaN/AlGaN quantum well lasers SH Park, SL Chuang Applied Physics Letters 72 (24), 3103-3105, 1998 | 251 | 1998 |
| Spontaneous polarization effects in wurtzite GaN/AlGaN quantum wells and comparison with experiment SH Park, SL Chuang Applied Physics Letters 76 (15), 1981-1983, 2000 | 222 | 2000 |
| Large-area OLED lightings and their applications JW Park, DC Shin, SH Park Semiconductor Science and Technology 26 (3), 034002, 2011 | 190 | 2011 |
| Crystal orientation effects on electronic properties of wurtzite InGaN/GaN quantum wells SH Park Journal of applied physics 91 (12), 9904-9908, 2002 | 182 | 2002 |
| Intraband relaxation time effects on non-Markovian gain with many-body effects and comparison with experiment SH Park, SL Chuang, J Minch, D Ahn Semiconductor science and technology 15 (2), 203, 2000 | 153 | 2000 |
| Spontaneous and piezoelectric polarization effects in wurtzite ZnO∕ MgZnO quantum well lasers SH Park, D Ahn Applied Physics Letters 87 (25), 2005 | 146 | 2005 |
| Electronic and Optical Properties of - and -Plane Wurtzite InGaN–GaN Quantum Wells SH Park, D Ahn, SL Chuang IEEE Journal of Quantum Electronics 43 (12), 1175-1182, 2007 | 141 | 2007 |
| Optical gain of strained GaAsSb/GaAs quantum-well lasers: A self-consistent approach G Liu, SL Chuang, SH Park Journal of Applied Physics 88 (10), 5554-5561, 2000 | 132 | 2000 |
| Optical gain in InGaN∕ GaN quantum well structures with embedded AlGaN δ layer SH Park, J Park, E Yoon Applied physics letters 90 (2), 2007 | 104 | 2007 |
| High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodes SH Park, D Ahn, JW Kim Applied Physics Letters 94 (4), 2009 | 102 | 2009 |
| Crystal orientation effects on electronic properties of wurtzite GaN/AlGaN quantum wells with spontaneous and piezoelectric polarization SH Park Japanese Journal of Applied Physics 39 (6R), 3478, 2000 | 85 | 2000 |
| Many-body optical gain of wurtzite GaN-based quantum-well lasers and comparison with experiment SH Park, SL Chuang Applied physics letters 72 (3), 287-289, 1998 | 85 | 1998 |
| Influence of V-pits on the efficiency droop in InGaN/GaN quantum wells J Kim, YH Cho, DS Ko, XS Li, JY Won, E Lee, SH Park, JY Kim, S Kim Optics express 22 (103), A857-A866, 2014 | 82 | 2014 |
| Dip-shaped InGaN/GaN quantum-well light-emitting diodes with high efficiency SH Park, D Ahn, BH Koo, JW Kim Applied Physics Letters 95 (6), 2009 | 76 | 2009 |
| Depolarization effects in (112 2)-oriented InGaN∕ GaN quantum well structures SH Park, D Ahn Applied physics letters 90 (1), 2007 | 66 | 2007 |
| Crystal orientation effects on many-body optical gain of wurtzite InGaN/GaN quantum well lasers SH Park Japanese journal of applied physics 42 (2B), L170, 2003 | 59 | 2003 |
| Optical gain in InGaN∕ InGaAlN quantum well structures with zero internal field SH Park, D Ahn, JW Kim Applied Physics Letters 92 (17), 2008 | 55 | 2008 |
Woopyo HongProfessor of Electronics Engineering Dept, Catholic University of Daegu在 cu.ac.kr 的电子邮件经过验证
