| Voltage tuneable terahertz emission from a ballistic nanometer InGaAs∕ InAlAs transistor J Lusakowski, W Knap, N Dyakonova, L Varani, J Mateos, T Gonzalez, ... Journal of applied physics 97 (6), 2005 | 180 | 2005 |
| Monte Carlo simulator for the design optimization of low-noise HEMTs J Mateos, T González, D Pardo, V Hoël, A Cappy IEEE Transactions on Electron Devices 47 (10), 1950-1956, 2000 | 132 | 2000 |
| Microwave detection at 110 GHz by nanowires with broken symmetry C Balocco, AM Song, M Åberg, A Forchel, T González, J Mateos, ... Nano Letters 5 (7), 1423-1427, 2005 | 122 | 2005 |
| Improved Monte Carlo algorithm for the simulation of/spl delta/-doped AlInAs/GaInAs HEMTs J Mateos, T González, D Pardo, V Hoel, H Happy, A Cappy IEEE transactions on electron devices 47 (1), 250-253, 2000 | 122 | 2000 |
| Physical models of ohmic contact for Monte Carlo device simulation T González, D Pardo Solid-State Electronics 39 (4), 555-562, 1996 | 111 | 1996 |
| Operation and high-frequency performance of nanoscale unipolar rectifying diodes J Mateos, BG Vasallo, D Pardo, T González Applied Physics Letters 86 (21), 2005 | 109 | 2005 |
| Ballistic nanodevices for terahertz data processing: Monte Carlo simulations J Mateos, BG Vasallo, D Pardo, T González, JS Galloo, Y Roelens, ... Nanotechnology 14 (2), 117, 2003 | 106 | 2003 |
| Microscopic modeling of nonlinear transport in ballistic nanodevices J Mateos, BG Vasallo, D Pardo, T González, JS Galloo, S Bollaert, ... IEEE Transactions on Electron Devices 50 (9), 1897-1905, 2003 | 105 | 2003 |
| Microscopic simulation of electronic noise in semiconductor materials and devices L Varani, L Reggiani, T Kuhn, T Gonzalez, D Pardo IEEE transactions on electron devices 41 (11), 1916-1925, 1994 | 103 | 1994 |
| Terahertz Gunn-like oscillations in InGaAs/InAlAs planar diodes S Pérez, T González, D Pardo, J Mateos Journal of applied physics 103 (9), 2008 | 93 | 2008 |
| Universality of the 1/3 shot-noise suppression factor in nondegenerate diffusive conductors T González, C González, J Mateos, D Pardo, L Reggiani, OM Bulashenko, ... Physical review letters 80 (13), 2901, 1998 | 93 | 1998 |
| Comparison between the dynamic performance of double-and single-gate AlInAs/InGaAs HEMTs BG Vasallo, N Wichmann, S Bollaert, Y Roelens, A Cappy, T González, ... IEEE Transactions on Electron Devices 54 (11), 2815-2822, 2007 | 88 | 2007 |
| Monte Carlo determination of the intrinsic small-signal equivalent circuit of MESFET's T Gonzalez, D Pardo IEEE Transactions on Electron Devices 42 (4), 605-611, 1995 | 78 | 1995 |
| Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels P Sangaré, G Ducournau, B Grimbert, V Brandli, M Faucher, C Gaquière, ... Journal of Applied Physics 113 (3), 2013 | 77 | 2013 |
| Effect of the T-gate on the performance of recessed HEMTs. A Monte Carlo analysis J Mateos, T González, D Pardo, V Hoel, A Cappy Semiconductor science and technology 14 (9), 864, 1999 | 72 | 1999 |
| Influence of the surface charge on the operation of ballistic T-branch junctions: a self-consistent model for Monte Carlo simulations I Iñiguez-De-La-Torre, J Mateos, T González, D Pardo, JS Galloo, ... Semiconductor science and technology 22 (6), 663, 2007 | 65 | 2007 |
| Nonlinear effects in T-branch junctions J Mateos, BG Vasallo, D Pardo, T González, E Pichonat, JS Galloo, ... IEEE Electron Device Letters 25 (5), 235-237, 2004 | 65 | 2004 |
| Searching for THz Gunn oscillations in GaN planar nanodiodes A Iniguez-De-La-Torre, I Íñiguez-De-La-Torre, J Mateos, T González, ... Journal of Applied Physics 111 (11), 2012 | 62 | 2012 |
| Electron transport in InP under high electric field conditions TG Sanchez, JEV Perez, PMG Conde, DP Collantes Semiconductor science and technology 7 (1), 31, 1992 | 53 | 1992 |
| Effect of long-range Coulomb interaction on shot-noise suppression in ballistic transport T González, OM Bulashenko, J Mateos, D Pardo, L Reggiani Physical Review B 56 (11), 6424, 1997 | 51 | 1997 |
Javier Mateos (ORCID:0000-0003-404...Universidad de Salamanca, Catedrático de Electrónica在 usal.es 的电子邮件经过验证
