Epidermal electronics DH Kim, N Lu, R Ma, YS Kim, RH Kim, S Wang, J Wu, SM Won, H Tao, ... science 333 (6044), 838-843, 2011 | 4908 | 2011 |
Carbon Nanotubes and Related Nanomaterials: Critical Advances and Challenges for Synthesis toward Mainstream Commercial Applications R Rao, CL Pint, AE Islam, RS Weatherup, S Hofmann, ER Meshot, F Wu, ... ACS nano 12 (12), 11756-11784, 2018 | 493 | 2018 |
Strain engineering and epitaxial stabilization of halide perovskites Y Chen, Y Lei, Y Li, Y Yu, J Cai, MH Chiu, R Rao, Y Gu, C Wang, W Choi, ... Nature 577 (7789), 209-215, 2020 | 488 | 2020 |
Recent issues in negative-bias temperature instability: Initial degradation, field dependence of interface trap generation, hole trapping effects, and relaxation AE Islam, H Kufluoglu, D Varghese, S Mahapatra, MA Alam Electron Devices, IEEE Transactions on 54 (9), 2143-2154, 2007 | 302 | 2007 |
β-Gallium oxide power electronics AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ... Apl Materials 10 (2), 2022 | 261 | 2022 |
Using nanoscale thermocapillary flows to create arrays of purely semiconducting single-walled carbon nanotubes SH Jin, SN Dunham, J Song, X Xie, J Kim, C Lu, A Islam, F Du, J Kim, ... Nature nanotechnology 8 (5), 347, 2013 | 221 | 2013 |
Enhanced Conductivity, Adhesion, and Environmental Stability of Printed Graphene Inks with Nitrocellulose EB Secor, TZ Gao, AE Islam, R Rao, SG Wallace, J Zhu, KW Putz, ... Chemistry of Materials 29 (5), 2332-2340, 2017 | 172 | 2017 |
Sources of Hysteresis in Carbon Nanotube Field‐Effect Transistors and Their Elimination Via Methylsiloxane Encapsulants and Optimized Growth Procedures SH Jin, AE Islam, T Kim, J Kim, MA Alam, JA Rogers Advanced Functional Materials 22 (11), 2276-2284, 2012 | 131 | 2012 |
A critical re-evaluation of the usefulness of RD framework in predicting NBTI stress and recovery S Mahapatra, AE Islam, S Deora, VD Maheta, K Joshi, A Jain, MA Alam 2011 International Reliability Physics Symposium, 6A. 3.1-6A. 3.10, 2011 | 123 | 2011 |
Spectroscopic evaluation of charge-transfer doping and strain in graphene/ heterostructures R Rao, AE Islam, S Singh, R Berry, RK Kawakami, B Maruyama, J Katoch Physical Review B 99 (19), 195401, 2019 | 87 | 2019 |
Isolation of NBTI stress generated interface trap and hole-trapping components in PNO p-MOSFETs S Mahapatra, VD Maheta, AE Islam, MA Alam IEEE Transactions on Electron Devices 56 (2), 236-242, 2009 | 86 | 2009 |
Recent Progress in Obtaining Semiconducting Single‐Walled Carbon Nanotubes for Transistor Applications AE Islam, JA Rogers, MA Alam Advanced Materials 27 (48), 7908-7937, 2015 | 85 | 2015 |
Insight on Structure of Water and Ice Next to Graphene Using Surface-Sensitive Spectroscopy S Singla, E Anim-Danso, AE Islam, Y Ngo, SS Kim, RR Naik, ... ACS nano 11 (5), 4899-4906, 2017 | 72 | 2017 |
Characterization and estimation of circuit reliability degradation under NBTI using on-line I DDQ measurement K Kang, K Kim, AE Islam, MA Alam, K Roy Proceedings of the 44th annual Design Automation Conference, 358-363, 2007 | 70 | 2007 |
Exploring the capability of multifrequency charge pumping in resolving location and energy levels of traps within dielectric M Masuduzzaman, AE Islam, MA Alam IEEE Transactions on Electron Devices 55 (12), 3421-3431, 2008 | 69 | 2008 |
Efficient closed-loop maximization of carbon nanotube growth rate using bayesian optimization J Chang, P Nikolaev, J Carpena-Núñez, R Rao, K Decker, AE Islam, ... Scientific reports 10 (1), 9040, 2020 | 67 | 2020 |
Biomarkers and detection Platforms for human health and performance monitoring: A Review D Sim, MC Brothers, JM Slocik, AE Islam, B Maruyama, CC Grigsby, ... Advanced Science 9 (7), 2104426, 2022 | 63 | 2022 |
In situ thermal oxidation kinetics in few layer MoS2 R Rao, AE Islam, PM Campbell, EM Vogel, B Maruyama 2D Materials 4 (2), 025058, 2017 | 60 | 2017 |
Gate leakage vs. NBTI in plasma nitrided oxides: Characterization, physical principles, and optimization AE Islam, G Gupta, S Mahapatra, AT Krishnan, K Ahmed, F Nouri, A Oates, ... 2006 international electron devices meeting, 1-4, 2006 | 59 | 2006 |
A Raman spectroscopy signature for characterizing defective single-layer graphene: Defect-induced I (D)/I (D′) intensity ratio by theoretical analysis J Jiang, R Pachter, F Mehmood, AE Islam, B Maruyama, JJ Boeckl Carbon 90, 53-62, 2015 | 56 | 2015 |