A spectroscopic ellipsometry study of cerium dioxide thin films grown on sapphire by rf magnetron sputtering S Guo, H Arwin, SN Jacobsen, K Järrendahl, U Helmersson Journal of Applied physics 77 (10), 5369-5376, 1995 | 233 | 1995 |
Electronic structure of ScN determined using optical spectroscopy, photoemission, and ab initio calculations D Gall, M Städele, K Järrendahl, I Petrov, P Desjardins, RT Haasch, ... Physical Review B 63 (12), 125119, 2001 | 176 | 2001 |
Chirality-induced polarization effects in the cuticle of scarab beetles: 100 years after Michelson H Arwin, R Magnusson, J Landin, K Järrendahl Philosophical Magazine 92 (12), 1583-1599, 2012 | 101 | 2012 |
Growth of epitaxial AlN (0001) on Si (111) by reactive magnetron sputter deposition I Ivanov, L Hultman, K Järrendahl, P Mårtensson, JE Sundgren, ... Journal of applied physics 78 (9), 5721-5726, 1995 | 87 | 1995 |
Multiple sample analysis of spectroscopic ellipsometry data of semi-transparent films K Järrendahl, H Arwin Thin Solid Films 313, 114-118, 1998 | 81 | 1998 |
Optical constants and Drude analysis of sputtered zirconium nitride films M Veszelei, K Andersson, CG Ribbing, K Järrendahl, H Arwin Applied optics 33 (10), 1993-2001, 1994 | 81 | 1994 |
Optical characterization of industrially sputtered nickel–nickel oxide solar selective surface M Adsten, R Joerger, K Järrendahl, E Wäckelgård Solar Energy 68 (4), 325-328, 2000 | 76 | 2000 |
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery C Ronning, M Dalmer, M Uhrmacher, M Restle, U Vetter, L Ziegeler, ... Journal of applied Physics 87 (5), 2149-2157, 2000 | 73 | 2000 |
Electrical and optical properties of films deposited by reactive magnetron sputtering E Broitman, N Hellgren, K Järrendahl, MP Johansson, S Olafsson, ... Journal of applied physics 89 (2), 1184-1190, 2001 | 70 | 2001 |
Cuticle structure of the scarab beetle Cetonia aurata analyzed by regression analysis of Mueller-matrix ellipsometric data H Arwin, T Berlind, B Johs, K Järrendahl Optics Express 21 (19), 22645-22656, 2013 | 60 | 2013 |
Polarizing properties and structural characteristics of the cuticle of the scarab beetle Chrysina gloriosa LF del Río, H Arwin, K Järrendahl Thin Solid Films 571, 410-415, 2014 | 47 | 2014 |
Mueller matrix spectroscopic ellipsometry study of chiral nanocrystalline cellulose films A Mendoza-Galván, E Muñoz-Pineda, SJL Ribeiro, MV Santos, ... Journal of Optics 20 (2), 024001, 2018 | 46 | 2018 |
Optical response of supported gold nanodisks A Mendoza-Galván, K Järrendahl, A Dmitriev, T Pakizeh, M Käll, H Arwin Optics Express 19 (13), 12093-12107, 2011 | 40 | 2011 |
Materials properties and characterization of SiC K Järrendahl, RF Davis Semiconductors and Semimetals 52, 1-20, 1998 | 40 | 1998 |
Electrical and optical properties of sputter deposited tin doped indium oxide thin films with silver additive A Hultåker, K Järrendahl, J Lu, CG Granqvist, GA Niklasson Thin solid films 392 (2), 305-310, 2001 | 36 | 2001 |
Enhanced quality of epitaxial AlN thin films on 6H–SiC by ultra-high-vacuum ion-assisted reactive dc magnetron sputter deposition S Tungasmita, J Birch, POÅ Persson, K Järrendahl, L Hultman Applied Physics Letters 76 (2), 170-172, 2000 | 36 | 2000 |
Optical properties of 4H–SiC R Ahuja, A Ferreira da Silva, C Persson, JM Osorio-Guillen, I Pepe, ... Journal of applied physics 91 (4), 2099-2103, 2002 | 34 | 2002 |
Ordinary and extraordinary dielectric functions of 4H–and 6H–SiC from 3.5 to 9.0 eV OPA Lindquist, K Järrendahl, S Peters, JT Zettler, C Cobet, N Esser, ... Applied Physics Letters 78 (18), 2715-2717, 2001 | 33 | 2001 |
Compositional information from amorphous Si-Ge multilayers using high-resolution electron microscopy imaging and direct digital recording P Henning, LR Wallenberg, K Järrendahl, L Hultman, LKL Falk, ... Ultramicroscopy 66 (3-4), 221-235, 1996 | 32 | 1996 |
Glancing angle deposition and growth mechanism of inclined AlN nanostructures using reactive magnetron sputtering S Bairagi, K Järrendahl, F Eriksson, L Hultman, J Birch, CL Hsiao Coatings 10 (8), 768, 2020 | 30 | 2020 |