Native defects in gallium arsenide JC Bourgoin, HJ Von Bardeleben, D Stievenard Journal of applied physics 64 (9), R65-R92, 1988 | 467 | 1988 |
Radiation hardness of gallium nitride A Ionascut-Nedelcescu, C Carlone, A Houdayer, HJ Von Bardeleben, ... IEEE Transactions on Nuclear Science 49 (6), 2733-2738, 2002 | 407 | 2002 |
Identification of a defect in a semiconductor: EL2 in GaAs HJ Von Bardeleben, D Stievenard, D Deresmes, A Huber, JC Bourgoin Physical Review B 34 (10), 7192, 1986 | 301 | 1986 |
Electron paramagnetic resonance study of A predicted high-temperature ferromagnetic semiconductor N Jedrecy, HJ Von Bardeleben, Y Zheng, JL Cantin Physical Review B 69 (4), 041308, 2004 | 169 | 2004 |
Behavior of electron-irradiation-induced defects in GaAs D Stievenard, X Boddaert, JC Bourgoin, HJ Von Bardeleben Physical Review B 41 (8), 5271, 1990 | 157 | 1990 |
Surface-acoustic-wave-driven ferromagnetic resonance in (Ga, Mn)(As, P) epilayers L Thevenard, C Gourdon, JY Prieur, HJ Von Bardeleben, S Vincent, ... Physical Review B 90 (9), 094401, 2014 | 147 | 2014 |
Identification of EL2 in GaAs HJ Von Bardeleben, D Stievenard, JC Bourgoin, A Huber Applied physics letters 47 (9), 970-972, 1985 | 147 | 1985 |
Bright room temperature single photon source at telecom range in cubic silicon carbide J Wang, Y Zhou, Z Wang, A Rasmita, J Yang, X Li, HJ von Bardeleben, ... Nature communications 9 (1), 4106, 2018 | 141 | 2018 |
Hydrogenated amorphous carbon film coating of PET bottles for gas diffusion barriers N Boutroy, Y Pernel, JM Rius, F Auger, HJ Von Bardeleben, JL Cantin, ... Diamond and Related Materials 15 (4-8), 921-927, 2006 | 131 | 2006 |
Identification of the Carbon Dangling Bond Center at the Interface <?format ?>by an EPR Study in Oxidized Porous SiC JL Cantin, HJ Von Bardeleben, Y Shishkin, Y Ke, RP Devaty, WJ Choyke Physical review letters 92 (1), 015502, 2004 | 131 | 2004 |
ESR and optical spectroscopy evidence for a chain-length dependence of the charged states of thiophene oligomers. Extrapolation to polythiophene G Horowitz, A Yassar, HJ Von Bardeleben Synthetic metals 62 (3), 245-252, 1994 | 120 | 1994 |
Synthesis and luminescence properties of vanadium-doped nanosized zinc oxide aerogel L El Mir, J El Ghoul, S Alaya, MB Salem, C Barthou, HJ Von Bardeleben Physica B: Condensed Matter 403 (10-11), 1770-1774, 2008 | 111 | 2008 |
Structure and electrochromism of two-dimensional octahedral molecular sieve h’-WO3 J Besnardiere, B Ma, A Torres-Pardo, G Wallez, H Kabbour, ... Nature Communications 10 (1), 327, 2019 | 106 | 2019 |
Proton-implantation-induced defects in n-type - and An electron paramagnetic resonance study HJ Von Bardeleben, JL Cantin, I Vickridge, G Battistig Physical Review B 62 (15), 10126, 2000 | 105 | 2000 |
Irreversible magnetization switching using surface acoustic waves L Thevenard, JY Duquesne, E Peronne, HJ Von Bardeleben, H Jaffres, ... Physical Review B—Condensed Matter and Materials Physics 87 (14), 144402, 2013 | 103 | 2013 |
Defects in porous p-type Si: An electron-paramagnetic-resonance study HJ Von Bardeleben, D Stievenard, A Grosman, C Ortega, J Siejka Physical Review B 47 (16), 10899, 1993 | 103 | 1993 |
Identification and magneto-optical properties of the NV center in HJ Von Bardeleben, JL Cantin, E Rauls, U Gerstmann Physical Review B 92 (6), 064104, 2015 | 101 | 2015 |
NV centers in , and silicon carbide: A variable platform for solid-state qubits and nanosensors HJ von Bardeleben, JL Cantin, A Csóré, A Gali, E Rauls, U Gerstmann Physical Review B 94 (12), 121202, 2016 | 100 | 2016 |
Vacancy defects in p-type created by low-energy electron irradiation HJ Von Bardeleben, JL Cantin, L Henry, MF Barthe Physical Review B 62 (16), 10841, 2000 | 97 | 2000 |
Preparation and characterization of n-type conductive (Al, Co) co-doped ZnO thin films deposited by sputtering from aerogel nanopowders L El Mir, ZB Ayadi, M Saadoun, K Djessas, HJ Von Bardeleben, S Alaya Applied Surface Science 254 (2), 570-573, 2007 | 95 | 2007 |