| Coherent singlet-triplet oscillations in a silicon-based double quantum dot BM Maune, MG Borselli, B Huang, TD Ladd, PW Deelman, KS Holabird, ... Nature 481 (7381), 344-347, 2012 | 664 | 2012 |
| Passive millimeter-wave imaging module with preamplified zero-bias detection JJ Lynch, HP Moyer, JH Schaffner, Y Royter, M Sokolich, B Hughes, ... IEEE Transactions on Microwave Theory and Techniques 56 (7), 1592-1600, 2008 | 158 | 2008 |
| Edge transport in the trivial phase of InAs/GaSb F Nichele, HJ Suominen, M Kjaergaard, CM Marcus, E Sajadi, JA Folk, ... New Journal of Physics 18 (8), 083005, 2016 | 136 | 2016 |
| Measurement of valley splitting in high-symmetry Si/SiGe quantum dots MG Borselli, RS Ross, AA Kiselev, ET Croke, KS Holabird, PW Deelman, ... Applied Physics Letters 98 (12), 2011 | 132 | 2011 |
| Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots MG Borselli, K Eng, ET Croke, BM Maune, B Huang, RS Ross, AA Kiselev, ... Applied Physics Letters 99 (6), 2011 | 128 | 2011 |
| Electric and magnetic tuning between the trivial and topological phases in InAs/GaSb double quantum wells F Qu, AJA Beukman, S Nadj-Perge, M Wimmer, BM Nguyen, W Yi, ... Physical review letters 115 (3), 036803, 2015 | 115 | 2015 |
| 100+ GHz static divide-by-2 circuit in InP-DHBT technology M Mokhtari, C Fields, RD Rajavel, M Sokolich, JF Jensen, WE Stanchina IEEE Journal of Solid-State Circuits 38 (9), 1540-1544, 2003 | 81 | 2003 |
| Quantized Conductance and Large g-Factor Anisotropy in InSb Quantum Point Contacts F Qu, J Van Veen, FK De Vries, AJA Beukman, M Wimmer, W Yi, ... Nano letters 16 (12), 7509-7513, 2016 | 76 | 2016 |
| A low-power 72.8-GHz static frequency divider in AlInAs/InGaAs HBT technology M Sokolich, CH Fields, S Thomas, B Shi, YK Boegeman, R Martinez, ... IEEE Journal of Solid-State Circuits 36 (9), 1328-1334, 2001 | 64 | 2001 |
| Undoped accumulation-mode Si/SiGe quantum dots MG Borselli, K Eng, RS Ross, TM Hazard, KS Holabird, B Huang, ... Nanotechnology 26 (37), 375202, 2015 | 61 | 2015 |
| Architecture, design, and test of continuous-time tunable intermediate-frequency bandpass delta-sigma modulators G Raghavan, JF Jensen, J Laskowski, M Kardos, MG Case, M Sokolich, ... IEEE Journal of solid-state Circuits 36 (1), 5-13, 2001 | 61 | 2001 |
| Giant Spin-Orbit Splitting in Inverted Double Quantum Wells F Nichele, M Kjaergaard, HJ Suominen, R Skolasinski, M Wimmer, ... Physical Review Letters 118 (1), 016801, 2017 | 50 | 2017 |
| Decoupling Edge Versus Bulk Conductance in the Trivial Regime of an InAs / GaSb Double Quantum Well Using Corbino Ring Geometry Phys. Rev. Lett. 117 (7), 077701, 2016 | 48 | 2016 |
| Superconducting Quantum Interference through Trivial Edge States in InAs FK De Vries, T Timmerman, VP Ostroukh, J Van Veen, AJA Beukman, ... Physical Review Letters 120 (4), 047702, 2018 | 45 | 2018 |
| High-speed integrated circuit technology: towards 100 GHz logic MJW Rodwell World Scientific, 2001 | 44 | 2001 |
| Spin-orbit interaction in a dual gated InAs/GaSb quantum well AJA Beukman, FK De Vries, J Van Veen, R Skolasinski, M Wimmer, F Qu, ... Physical Review B 96 (24), 241401, 2017 | 43 | 2017 |
| Heterogeneous wafer-scale integration of 250nm, 300GHz InP DHBTs with a 130nm RF-CMOS technology JC Li, Y Royter, PR Patterson, T Hussain, JR Duvall, MC Montes, D Le, ... 2008 IEEE International Electron Devices Meeting, 1-3, 2008 | 43 | 2008 |
| Indium phosphide ICs unleash the high-frequency spectrum G Raghavan, M Sokolich, WE Stanchina IEEE Spectrum 37 (10), 47-52, 2000 | 43 | 2000 |
| A low power 52.9 GHz static divider implemented in a manufacturable 180 GHz AlInAs/InGaAs HBT IC technology M Sokolich, DP Docter, YK Brown, AR Kramer, JF Jensen, WE Stanchina, ... GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th …, 1998 | 43 | 1998 |
| Demonstration of low voltage field emission EA Adler, Z Bardai, R Forman, DM Goebel, RT Longo, M Sokolich IEEE Transactions on Electron Devices 38 (10), 2304-2308, 1991 | 42 | 1991 |
