| Computational Electronics: semiclassical and quantum device modeling and simulation D Vasileska, SM Goodnick, G Klimeck CRC press, 2017 | 346 | 2017 |
| On the performance limits for Si MOSFETs: A theoretical study F Assad, Z Ren, D Vasileska, S Datta, M Lundstrom IEEE Transactions on Electron Devices 47 (1), 232-240, 2000 | 279 | 2000 |
| Electron transport in silicon nanowires: The role of acoustic phonon confinement and surface roughness scattering EB Ramayya, D Vasileska, SM Goodnick, I Knezevic Journal of Applied Physics 104 (6), 2008 | 218 | 2008 |
| Computational electronics D Vasileska, SM Goodnick Springer Nature, 2022 | 185 | 2022 |
| Modeling thermal effects in nanodevices K Raleva, D Vasileska, SM Goodnick, M Nedjalkov IEEE Transactions on Electron Devices 55 (6), 1306-1316, 2008 | 153 | 2008 |
| A novel approach for introducing the electron-electron and electron-impurity interactions in particle-based simulations WJ Gross, D Vasileska, DK Ferry IEEE Electron Device Letters 20 (9), 463-465, 1999 | 152 | 1999 |
| Lead-orientation-dependent wave function scarring in open quantum dots JP Bird, R Akis, DK Ferry, D Vasileska, J Cooper, Y Aoyagi, T Sugano Physical review letters 82 (23), 4691, 1999 | 152 | 1999 |
| Quantum effects in MOSFETs: Use of an effective potential in 3D Monte Carlo simulation of ultra-short channel devices DK Ferry, R Akis, D Vasileska International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000 | 149 | 2000 |
| Scaled silicon MOSFETs: Degradation of the total gate capacitance D Vasileska, DK Schroder, DK Ferry IEEE Transactions on Electron Devices 44 (4), 584-587, 1997 | 136 | 1997 |
| Electron mobility in silicon nanowires EB Ramayya, D Vasileska, SM Goodnick, I Knezevic IEEE transactions on nanotechnology 6 (1), 113-117, 2007 | 120 | 2007 |
| Contact block reduction method for ballistic transport and carrier densities of open nanostructures D Mamaluy, D Vasileska, M Sabathil, T Zibold, P Vogl Physical Review B—Condensed Matter and Materials Physics 71 (24), 245321, 2005 | 115 | 2005 |
| Ultrasmall MOSFETs: the importance of the full Coulomb interaction on device characteristics WJ Gross, D Vasileska, DK Ferry IEEE Transactions on Electron Devices 47 (10), 1831-1837, 2000 | 82 | 2000 |
| Quantum transport simulation of experimentally fabricated nano-FinFET HR Khan, D Mamaluy, D Vasileska IEEE transactions on electron devices 54 (4), 784-796, 2007 | 78 | 2007 |
| Narrow-width SOI devices: The role of quantum-mechanical size quantization effect and unintentional doping on the device operation D Vasileska, SS Ahmed IEEE Transactions on Electron Devices 52 (2), 227-236, 2005 | 74 | 2005 |
| Scaled silicon MOSFET's: Universal mobility behavior D Vasileska, DK Ferry IEEE Transactions on Electron Devices 44 (4), 577-583, 1997 | 63 | 1997 |
| Self-heating effects in nanoscale FD SOI devices: The role of the substrate, boundary conditions at various interfaces, and the dielectric material type for the box D Vasileska, K Raleva, SM Goodnick IEEE Transactions on Electron Devices 56 (12), 3064-3071, 2009 | 60 | 2009 |
| An ensemble Monte Carlo study of high-field transport in β-SiC K Tsukioka, D Vasileska, DK Ferry Physica B: Condensed Matter 185 (1-4), 466-470, 1993 | 58 | 1993 |
| Modeling of deep-submicrometer MOSFETs: random impurity effects, threshold voltage shifts and gate capacitance attenuation D Vasileska, WJ Gross, DK Ferry 1998 Sixth International Workshop on Computational Electronics. Extended …, 1998 | 57 | 1998 |
| Modeling heating effects in nanoscale devices: the present and the future D Vasileska, K Raleva, SM Goodnick Journal of computational electronics 7, 66-93, 2008 | 56 | 2008 |
| Computational electronics D Vasileska, SM Goodnick Materials Science and Engineering: R: Reports 38 (5), 181-236, 2002 | 55 | 2002 |
