| A 256× 256 45/65nm 3D-stacked SPAD-based direct TOF image sensor for LiDAR applications with optical polar modulation for up to 18.6 dB interference suppression AR Ximenes, P Padmanabhan, MJ Lee, Y Yamashita, DN Yaung, ... 2018 IEEE International Solid-State Circuits Conference-(ISSCC), 96-98, 2018 | 114 | 2018 |
| Si avalanche photodetectors fabricated in standard complementary metal-oxide-semiconductor process HS Kang, MJ Lee, WY Choi Applied physics letters 90 (15), 2007 | 103 | 2007 |
| 10-Gb/s 850-nm CMOS OEIC receiver with a silicon avalanche photodetector JS Youn, MJ Lee, KY Park, WY Choi IEEE journal of quantum electronics 48 (2), 229-236, 2011 | 92 | 2011 |
| A silicon avalanche photodetector fabricated with standard CMOS technology with over 1 THz gain-bandwidth product MJ Lee, WY Choi Optics Express 18 (23), 24189-24194, 2010 | 90 | 2010 |
| High-performance back-illuminated three-dimensional stacked single-photon avalanche diode implemented in 45-nm CMOS technology MJ Lee, AR Ximenes, P Padmanabhan, TJ Wang, KC Huang, ... IEEE Journal of selected topics in quantum electronics 24 (6), 1-9, 2018 | 89 | 2018 |
| A modular, direct time-of-flight depth sensor in 45/65-nm 3-D-stacked CMOS technology AR Ximenes, P Padmanabhan, MJ Lee, Y Yamashita, DN Yaung, ... IEEE Journal of Solid-State Circuits 54 (11), 3203-3214, 2019 | 83 | 2019 |
| Effects of guard-ring structures on the performance of silicon avalanche photodetectors fabricated with standard CMOS technology MJ Lee, H Rucker, WY Choi IEEE Electron Device Letters 33 (1), 80-82, 2011 | 80 | 2011 |
| A low-noise CMOS SPAD pixel with 12.1 ps SPTR and 3 ns dead time F Gramuglia, ML Wu, C Bruschini, MJ Lee, E Charbon IEEE Journal of Selected Topics in Quantum Electronics 28 (2: Optical …, 2021 | 70 | 2021 |
| A first single-photon avalanche diode fabricated in standard SOI CMOS technology with a full characterization of the device MJ Lee, P Sun, E Charbon Optics express 23 (10), 13200-13209, 2015 | 62 | 2015 |
| Area-dependent photodetection frequency response characterization of silicon avalanche photodetectors fabricated with standard CMOS technology MJ Lee, WY Choi IEEE Transactions on Electron Devices 60 (3), 998-1004, 2013 | 57 | 2013 |
| 7.4 A 256× 128 3D-stacked (45nm) SPAD FLASH LiDAR with 7-level coincidence detection and progressive gating for 100m range and 10klux background light P Padmanabhan, C Zhang, M Cazzaniga, B Efe, AR Ximenes, MJ Lee, ... 2021 IEEE International Solid-State Circuits Conference (ISSCC) 64, 111-113, 2021 | 54 | 2021 |
| Equivalent circuit model for Si avalanche photodetectors fabricated in standard CMOS process MJ Lee, HS Kang, WY Choi IEEE electron device letters 29 (10), 1115-1117, 2008 | 49 | 2008 |
| High-speed CMOS integrated optical receiver with an avalanche photodetector JS Youn, HS Kang, MJ Lee, KY Park, WY Choi IEEE Photonics Technology Letters 21 (20), 1553-1555, 2009 | 48 | 2009 |
| Progress in single-photon avalanche diode image sensors in standard CMOS: From two-dimensional monolithic to three-dimensional-stacked technology MJ Lee, E Charbon Japanese Journal of Applied Physics 57 (10), 1002A3, 2018 | 46 | 2018 |
| 3D-stacked CMOS SPAD image sensors: Technology and applications E Charbon, C Bruschini, MJ Lee 2018 25th IEEE International Conference on Electronics, Circuits and Systems …, 2018 | 42 | 2018 |
| Engineering breakdown probability profile for PDP and DCR optimization in a SPAD fabricated in a standard 55 nm BCD process F Gramuglia, P Keshavarzian, E Kizilkan, C Bruschini, SS Tan, M Tng, ... IEEE Journal of Selected Topics in Quantum Electronics 28 (2: Optical …, 2021 | 36 | 2021 |
| A back-illuminated 3D-stacked single-photon avalanche diode in 45nm CMOS technology MJ Lee, AR Ximenes, P Padmanabhan, TJ Wang, KC Huang, ... 2017 IEEE International Electron Devices Meeting (IEDM), 16.6. 1-16.6. 4, 2017 | 31 | 2017 |
| First CMOS silicon avalanche photodetectors with over 10-GHz bandwidth MJ Lee IEEE Photonics Technology Letters 28 (3), 276-279, 2015 | 29 | 2015 |
| Performance optimization and improvement of silicon avalanche photodetectors in standard CMOS technology MJ Lee, WY Choi IEEE Journal of Selected Topics in Quantum Electronics 24 (2), 1-13, 2017 | 27 | 2017 |
| An integrated 12.5-Gb/s optoelectronic receiver with a silicon avalanche photodetectorin standard SiGe BiCMOS technology JS Youn, MJ Lee, KY Park, H Rücker, WY Choi Optics express 20 (27), 28153-28162, 2012 | 25 | 2012 |
Woo-Young ChoiDept. of Electrical and Electronic Engineering, Yonsei University在 yonsei.ac.kr 的电子邮件经过验证
