| Diamond power devices: state of the art, modelling, figures of merit and future perspective N Donato, N Rouger, J Pernot, G Longobardi, F Udrea Journal of Physics D: Applied Physics 53 (9), 093001, 2019 | 196 | 2019 |
| Series-coupled silicon racetrack resonators and the Vernier effect: theory and measurement R Boeck, NAF Jaeger, N Rouger, L Chrostowski Optics express 18 (24), 25151-25157, 2010 | 143 | 2010 |
| Temperature effects on silicon-on-insulator (SOI) racetrack resonators: A coupled analytic and 2-D finite difference approach N Rouger, L Chrostowski, R Vafaei Journal of Lightwave Technology 28 (9), 1380-1391, 2010 | 69 | 2010 |
| Deep-Depletion Mode Boron-Doped Monocrystalline Diamond Metal Oxide Semiconductor Field Effect Transistor TT Pham, J Pernot, G Perez, D Eon, E Gheeraert, N Rouger IEEE Electron Device Letters 38 (11), 1571-1574, 2017 | 65 | 2017 |
| Deep depletion concept for diamond MOSFET TT Pham, N Rouger, C Masante, G Chicot, F Udrea, D Eon, E Gheeraert, ... Applied Physics Letters 111 (17), 173503, 2017 | 59 | 2017 |
| Loss free gate driver unipolar power supply for high side power transistors JC Crébier, N Rouger IEEE Transactions on Power Electronics 23 (3), 1565-1573, 2008 | 56 | 2008 |
| Above 2000 V breakdown voltage at 600 K GaN‐on‐silicon high electron mobility transistors N Herbecq, I Roch‐Jeune, A Linge, M Zegaoui, PO Jeannin, N Rouger, ... physica status solidi (a) 213 (4), 873-877, 2016 | 49 | 2016 |
| A gate driver with integrated deadtime controller R Grezaud, F Ayel, N Rouger, JC Crebier IEEE Transactions on Power Electronics 31 (12), 8409-8421, 2016 | 46 | 2016 |
| Model implementation towards the prediction of J (V) characteristics in diamond bipolar device simulations A Maréchal, N Rouger, JC Crebier, J Pernot, S Koizumi, T Teraji, ... Diamond and Related Materials 43, 34-42, 2014 | 45 | 2014 |
| Toward generic fully integratedgate driver power supplies N Rouger, JC Crebier IEEE Transactions on Power Electronics 23 (4), 2106-2114, 2008 | 45 | 2008 |
| Comprehensive electrical analysis of metal/Al2O3/O-terminated diamond capacitance TT Pham, A Maréchal, P Muret, D Eon, E Gheeraert, N Rouger, J Pernot Journal of Applied Physics 123 (16), 161523, 2018 | 44 | 2018 |
| Optimal drift region for diamond power devices G Chicot, D Eon, N Rouger Diamond and Related Materials 69, 68-73, 2016 | 40 | 2016 |
| Diamond semiconductor performances in power electronics applications G Perez, A Maréchal, G Chicot, P Lefranc, PO Jeannin, D Eon, N Rouger Diamond and Related Materials 110, 108154, 2020 | 39 | 2020 |
| CMOS Active Gate Driver for Closed-Loop dv/dt Control of GaN Transistors P Bau, M Cousineau, B Cougo, F Richardeau, N Rouger IEEE Transactions on Power Electronics 35 (12), 13322-13332, 2020 | 36 | 2020 |
| Recent progress in deep-depletion diamond metal–oxide–semiconductor field-effect transistors C Masante, N Rouger, J Pernot Journal of Physics D: Applied Physics 54 (23), 233002, 2021 | 31 | 2021 |
| Integrated temperature sensor with diamond Schottky diodes using a thermosensitive parameter G Perez, G Chicot, Y Avenas, P Lefranc, PO Jeannin, D Eon, N Rouger Diamond and Related Materials 78, 83-87, 2017 | 30 | 2017 |
| Design of Diamond Power Devices: Application to Schottky Barrier Diodes N Rouger, A Maréchal Energies 12 (12), 2387, 2019 | 28 | 2019 |
| 200V, 4MV/cm lateral diamond MOSFET TT Pham, J Pernot, C Masante, D Eon, E Gheeraert, G Chicot, F Udrea, ... 2017 IEEE International Electron Devices Meeting (IEDM), 2017 | 28 | 2017 |
| A CMOS gate driver with ultra-fast dV/dt embedded control dedicated to optimum EMI and turn-on losses management for GaN power transistors P Bau, M Cousineau, B Cougo, F Richardeau, D Colin, N Rouger 2018 14th Conference on Ph. D. Research in Microelectronics and Electronics …, 2018 | 27 | 2018 |
| High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication TT Pham, M Gutiérrez, C Masante, N Rouger, D Eon, E Gheeraert, ... Applied Physics Letters 112 (10), 102103, 2018 | 26 | 2018 |
Jean-Christophe CrebierCNRS researcher - G2Elab Grenoble France在 g2elab.grenoble-inp.fr 的电子邮件经过验证
