| Single-frequency tunable Sb-based VCSELs emitting at 2.3 μm A Ouvrard, A Garnache, L Cerutti, F Genty, D Romanini IEEE Photonics Technology Letters 17 (10), 2020-2022, 2005 | 109 | 2005 |
| High temperature GaInSbAs/GaAlSbAs quantum well singlemode continuous wave lasers emitting near 2.3 µm DA Yarekha, G Glastre, A Perona, Y Rouillard, F Genty, EM Skouri, ... Electronics Letters 36 (6), 537-539, 2000 | 104* | 2000 |
| Effect of tin doping on optical properties of nanostructured ZnO thin films grown by spray pyrolysis technique FZ Bedia, A Bedia, N Maloufi, M Aillerie, F Genty, B Benyoucef Journal of alloys and compounds 616, 312-318, 2014 | 70 | 2014 |
| High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 μm L Cerutti, A Garnache, A Ouvrard, F Genty Journal of Crystal Growth 268 (1-2), 128-134, 2004 | 68 | 2004 |
| Low threshold, room temperature laser diode pumped Sb-based VECSEL emitting around 2.1 µm L Cerutti, A Garnache, F Genty, A Ouvrard, C Alibert Electronics Letters 39 (3), 290-292, 2003 | 59 | 2003 |
| 2-2.7 μm single frequency tunable Sb-based lasers operating in CW at RT: microcavity and external cavity VCSELs, DFB A Garnache, A Ouvrard, L Cerutti, D Barat, A Vicet, F Genty, Y Rouillard, ... Semiconductor Lasers and Laser Dynamics II 6184, 195-209, 2006 | 55 | 2006 |
| Mid-infrared GaSb-based EP-VCSEL emitting at 2.63 µm A Ducanchez, L Cerutti, P Grech, F Genty, E Tournié Electronics letters 45 (5), 265-267, 2009 | 52 | 2009 |
| BAlN thin layers for deep UV applications X Li, S Sundaram, YE Gmili, T Moudakir, F Genty, S Bouchoule, ... physica status solidi (a) 212 (4), 745-750, 2015 | 48 | 2015 |
| MOVPE grown periodic AlN/BAlN heterostructure with high boron content X Li, S Sundaram, Y El Gmili, F Genty, S Bouchoule, G Patriache, ... Journal of Crystal Growth 414, 119-122, 2015 | 48 | 2015 |
| AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm X Li, S Sundaram, P Disseix, G Le Gac, S Bouchoule, G Patriarche, ... Optical Materials Express 5 (2), 380-392, 2015 | 46 | 2015 |
| Photothermal investigations of thermal and optical properties of GaAlAsSb and AlAsSb thin layers F Saadallah, N Yacoubi, F Genty, C Alibert Journal of Applied Physics 94 (8), 5041-5048, 2003 | 42 | 2003 |
| GaSb-based VCSELs emitting in the mid-infrared wavelength range (2–3 μm) grown by MBE L Cerutti, A Ducanchez, G Narcy, P Grech, G Boissier, A Garnache, ... Journal of Crystal Growth 311 (7), 1912-1916, 2009 | 40 | 2009 |
| GaInSb/AlGaAsSb strained quantum well semiconductor lasers for 1.55 m operation G Almuneau, F Genty, A Wilk, P Grech, A Joullié, L Chusseau Semiconductor science and technology 14 (1), 89, 1999 | 38 | 1999 |
| Edge and vertical surface emitting lasers around 2.0–2.5 μm and their applications Y Rouillard, F Genty, A Perona, A Vicet, DA Yarekha, G Boissier, P Grech, ... Philosophical Transactions of the Royal Society of London. Series A …, 2001 | 35 | 2001 |
| AlAsSb/GaSb doped distributed Bragg reflectors for electrically pumped VCSELs emitting around 2.3 µm A Perona, A Garnache, L Cerutti, A Ducanchez, S Mihindou, P Grech, ... Semiconductor science and technology 22 (10), 1140, 2007 | 34 | 2007 |
| 2.36 µm diode pumped VCSEL operating at room temperature in continuous wave with circular TEM00 output beam L Cerutti, A Garnache, A Ouvrard, M Garcia, E Cerda, F Genty Electronics Letters 40 (14), 869-871, 2004 | 30 | 2004 |
| High reflectivity Te-doped GaAsSb/AlAsSb Bragg mirror for 1.5 µm surface emitting lasers F Genty, G Almuneau, L Chusseau, G Boissier, JP Malzac, P Salet, ... Electronics Letters 33 (2), 140-142, 1997 | 30 | 1997 |
| Long-wavelength (Ga, In) Sb/GaSb strained quantum well lasers grown by molecular beam epitaxy N Bertru, A Baranov, Y Cuminal, G Almuneau, F Genty, A Joullié, O Brandt, ... Semiconductor science and technology 13 (8), 936, 1998 | 28 | 1998 |
| Room-Temperature Continuous-Wave Operation of 2.3-m Sb-Based Electrically Pumped Monolithic Vertical-Cavity Lasers A Ducanchez, L Cerutti, P Grech, F Genty IEEE Photonics Technology Letters 20 (20), 1745-1747, 2008 | 27 | 2008 |
| Influence of Al-doped ZnO transparent contacts deposited by a spray pyrolysis technique on performance of HIT solar cells FZ Bedia, A Bedia, M Aillerie, N Maloufi, F Genty, B Benyoucef Energy procedia 50, 853-861, 2014 | 26 | 2014 |
