| Compact hierarchical bipolar transistor modeling with HICUM A Chakravorty World Scientific, 2010 | 124* | 2010 |
| Analytical model of subthreshold current and slope for asymmetric 4-T and 3-T double-gate MOSFETs A Dey, A Chakravorty, N DasGupta, A DasGupta IEEE Transactions on Electron Devices 55 (12), 3442-3449, 2008 | 100 | 2008 |
| Analytic estimation of thermal resistance in HBTs A Chakravorty, R D’Esposito, S Balanethiram, S Frégonèse, T Zimmer IEEE Transactions on Electron Devices 63 (8), 2994-2998, 2016 | 23 | 2016 |
| Effects of BEOL on self-heating and thermal coupling in SiGe multi-finger HBTs under real operating condition ADD Dwivedi, A Chakravorty, R D’esposito, AK Sahoo, S Fregonese, ... Solid-State Electronics 115, 1-6, 2016 | 23 | 2016 |
| Compact modeling of high frequency correlated noise in HBTs P Sakalas, J Herricht, A Chakravorty, M Schroter 2006 Bipolar/BiCMOS Circuits and Technology Meeting, 1-4, 2006 | 23 | 2006 |
| Reliability of high-speed SiGe: C HBT under electrical stress close to the SOA limit T Jacquet, G Sasso, A Chakravorty, N Rinaldi, K Aufinger, T Zimmer, ... Microelectronics Reliability 55 (9-10), 1433-1437, 2015 | 22 | 2015 |
| Accurate modeling of thermal resistance for on-wafer SiGe HBTs using average thermal conductivity S Balanethiram, A Chakravorty, R D’Esposito, S Fregonese, D Céli, ... IEEE Transactions on Electron Devices 64 (9), 3955-3960, 2017 | 21 | 2017 |
| Design of novel high-Q multipath parallel-stacked inductor VNR Vanukuru, A Chakravorty IEEE Transactions on Electron Devices 61 (11), 3905-3909, 2014 | 21 | 2014 |
| Integrated layout optimized high-g inductors on high-resistivity SOI substrates for RF front-end modules VNR Vanukuru, A Chakravorty 2014 International Conference on Signal Processing and Communications (SPCOM …, 2014 | 21 | 2014 |
| Modeling of SOI-LDMOS transistor including impact ionization, snapback, and self-heating U Radhakrishna, A DasGupta, N DasGupta, A Chakravorty IEEE transactions on electron devices 58 (11), 4035-4041, 2011 | 21 | 2011 |
| A scalable, broadband, and physics-based model for on-chip rectangular spiral inductors SS Jayaraman, V Vanukuru, D Nair, A Chakravorty IEEE Transactions on Magnetics 55 (9), 1-6, 2019 | 20 | 2019 |
| Compact Modeling of Proximity Effect in High- Tapered Spiral Inductors J Sathyasree, V Vanukuru, D Nair, A Chakravorty IEEE Electron Device Letters 39 (4), 588-590, 2018 | 20 | 2018 |
| Low-frequency noise in advanced SiGe: C HBTs—Part I: Analysis C Mukherjee, T Jacquet, A Chakravorty, T Zimmer, J Böck, K Aufinger, ... IEEE Transactions on Electron Devices 63 (9), 3649-3656, 2016 | 19 | 2016 |
| High-Q Characteristics of Variable Width Inductors With Reverse Excitation VNR Vanukuru, A Chakravorty IEEE Transactions on Electron Devices 61 (9), 3350-3354, 2014 | 19 | 2014 |
| SOI-LDMOS Transistors With Optimized Partial n+ Buried Layer for Improved Performance in Power Amplifier Applications KNS Nikhil, N DasGupta, A DasGupta, A Chakravorty IEEE Transactions on Electron Devices 65 (11), 4931-4937, 2018 | 16 | 2018 |
| Analysis of high-frequency measurement of transistors along with electromagnetic and SPICE cosimulation S Fregonese, M Cabbia, C Yadav, M Deng, SR Panda, M De Matos, ... IEEE Transactions on Electron Devices 67 (11), 4770-4776, 2020 | 15 | 2020 |
| Extraction of BEOL contributions for thermal resistance in SiGe HBTs S Balanethiram, R D’Esposito, A Chakravorty, S Fregonese, T Zimmer IEEE Transactions on Electron Devices 64 (3), 1380-1384, 2017 | 14 | 2017 |
| Series stacked multipath inductor with high self resonant frequency VNR Vanukuru, A Chakravorty IEEE Transactions on Electron Devices 62 (3), 1058-1062, 2015 | 14 | 2015 |
| Design and modeling of high-Q variable width and spacing, planar and 3-D stacked spiral inductors RR Manikandan, VNR Vanukuru, A Chakravorty, B Amrutur 18th International Symposium on VLSI Design and Test, 1-6, 2014 | 14 | 2014 |
| High density solenoidal series pair symmetric inductors and transformers VNR Vanukuru, A Chakravorty IEEE Transactions on Electron Devices 61 (7), 2503-2508, 2014 | 14 | 2014 |
