Non-classical properties of even circular states R Ragi, B Baseia, SS Mizrahi Journal of Optics B: Quantum and Semiclassical Optics 2 (3), 299, 2000 | 33 | 2000 |
Generalized superposition of two coherent states and interference effects R Ragi, B Baseia, VS Bagnato International Journal of Modern Physics B 12 (14), 1495-1529, 1998 | 17 | 1998 |
An Explicit Quantum-Mechanical Compact Model for the I-V Characteristics of Cylindrical Nanowire MOSFETs R Ragi, RVT da Nobrega, UR Duarte, MA Romero IEEE Transactions on Nanotechnology 15 (4), 627-634, 2016 | 15 | 2016 |
Método de Hartree-Fock: dois exemplos analiticamente solúveis A Antunes, AS Santos, MF Silva, R Ragi, VS Bagnato Revista Brasileira de Ensino de Física 21 (2), 221-232, 1999 | 12 | 1999 |
Fully Analytical Compact Model for the I–V Characteristics of Large Radius Junctionless Nanowire FETs R Ragi, MA Romero IEEE Transactions on Nanotechnology 18, 762-769, 2019 | 8 | 2019 |
A note on generalized superposition of coherent states R Ragi, VS Bagnato, B Baseia Modern physics letters B 13 (03n04), 131-134, 1999 | 8 | 1999 |
Modeling the electrical characteristics of Schottky contacts in low-dimensional heterostructure devices R Ragi, MA Romero, B Nabet IEEE transactions on electron devices 52 (2), 170-175, 2005 | 7 | 2005 |
Accurate and fully analytical expressions for quantum energy levels in finite potential wells for nanoelectronic compact modeling DR Celino, MA Romero, R Ragi Journal of Computational Electronics 20, 2411-2419, 2021 | 6 | 2021 |
Modeling the CV characteristics of heterodimensional Schottky contacts R Ragi, J Manzoli, MA Romero, B Nabet 32o. European Solid-States Device Research Conference, pag 623, 2002 | 6 | 2002 |
Fully analytical compact model for the Q–V and C–V characteristics of cylindrical junctionless nanowire FETs AM de Souza, DR Celino, R Ragi, MA Romero Microelectronics Journal 119, 105324, 2022 | 5 | 2022 |
Fully analytical compact model for the IV characteristics of resonant tunneling diodes DR Celino, AM de Souza, CLMP Plazas, R Ragi, MA Romero 2021 35th Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2021 | 4 | 2021 |
Modeling of peak voltage and current of nanowire resonant tunneling devices: case study on InAs/InP double‐barrier heterostructures R Ragi, RVT da Nobrega, MA Romero International Journal of Numerical Modelling: Electronic Networks, Devices …, 2013 | 4 | 2013 |
Gate controlled 2-DEG varactor for VCO applications in microwave circuits A Anwar, B Nabet, R Ragi, JE Manzoli, MA Romero Microelectronics journal 33 (5-6), 495-500, 2002 | 4 | 2002 |
A Physics Based RTD Model Accounting for Space Charge and Phonon Scattering Effects DR Celino, AM de Souza, CLMP Plazas, R Ragi, MA Romero Journal of Integrated Circuits and Systems 17 (1), 1-8, 2022 | 3 | 2022 |
Fully analytical compact model for the Q–V and C–V characteristics of cylindrical junctionless nanowire FETs AM Souza, DR Celino, R Ragi, MA Romero Microelectronics Journal 119, 1-8, 2022 | 2 | 2022 |
I–V characteristics of Schottky contacts based on quantum wires R Ragi, MA Romero Microelectronics journal 37 (11), 1261-1264, 2006 | 2 | 2006 |
Contribuições para a modelagem de dispositivos semicondutores baseados em contatos Schottky heterodimensionais RAR Pereira Universidade de São Paulo, 2003 | 2 | 2003 |
Analytical physics-based compact current–voltage model for 2D-2D resonant tunneling diodes DR Celino, R Ragi, MA Romero IEEE Transactions on Nanotechnology 21, 752-762, 2022 | 1 | 2022 |
(High-electron mobility transitors (HEMTs): Principles of operation and electronic characteristics) MA Romero, R Ragi, JE Manzoli Revista Brasileira de Ensino de Física 37, 4306-1-4306-15, 2015 | 1 | 2015 |
A novel self consistent calculation approach for the capacitance‐voltage characteristics of semiconductor quantum wire transistors based on a split‐gate configuration R Ragi, RVT da Nobrega, MA Romero COMPEL-The international journal for computation and mathematics in …, 2012 | 1 | 2012 |