关注
REGIANE APARECIDA RAGI PEREIRA
REGIANE APARECIDA RAGI PEREIRA
其他姓名R. A. R. Pereira, R. Ragi, Regiane Ragi
Pesquisador independente
在 alumni.usp.br 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
Non-classical properties of even circular states
R Ragi, B Baseia, SS Mizrahi
Journal of Optics B: Quantum and Semiclassical Optics 2 (3), 299, 2000
332000
Generalized superposition of two coherent states and interference effects
R Ragi, B Baseia, VS Bagnato
International Journal of Modern Physics B 12 (14), 1495-1529, 1998
171998
An Explicit Quantum-Mechanical Compact Model for the I-V Characteristics of Cylindrical Nanowire MOSFETs
R Ragi, RVT da Nobrega, UR Duarte, MA Romero
IEEE Transactions on Nanotechnology 15 (4), 627-634, 2016
152016
Método de Hartree-Fock: dois exemplos analiticamente solúveis
A Antunes, AS Santos, MF Silva, R Ragi, VS Bagnato
Revista Brasileira de Ensino de Física 21 (2), 221-232, 1999
121999
Fully Analytical Compact Model for the IV Characteristics of Large Radius Junctionless Nanowire FETs
R Ragi, MA Romero
IEEE Transactions on Nanotechnology 18, 762-769, 2019
82019
A note on generalized superposition of coherent states
R Ragi, VS Bagnato, B Baseia
Modern physics letters B 13 (03n04), 131-134, 1999
81999
Modeling the electrical characteristics of Schottky contacts in low-dimensional heterostructure devices
R Ragi, MA Romero, B Nabet
IEEE transactions on electron devices 52 (2), 170-175, 2005
72005
Accurate and fully analytical expressions for quantum energy levels in finite potential wells for nanoelectronic compact modeling
DR Celino, MA Romero, R Ragi
Journal of Computational Electronics 20, 2411-2419, 2021
62021
Modeling the CV characteristics of heterodimensional Schottky contacts
R Ragi, J Manzoli, MA Romero, B Nabet
32o. European Solid-States Device Research Conference, pag 623, 2002
62002
Fully analytical compact model for the Q–V and C–V characteristics of cylindrical junctionless nanowire FETs
AM de Souza, DR Celino, R Ragi, MA Romero
Microelectronics Journal 119, 105324, 2022
52022
Fully analytical compact model for the IV characteristics of resonant tunneling diodes
DR Celino, AM de Souza, CLMP Plazas, R Ragi, MA Romero
2021 35th Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2021
42021
Modeling of peak voltage and current of nanowire resonant tunneling devices: case study on InAs/InP double‐barrier heterostructures
R Ragi, RVT da Nobrega, MA Romero
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2013
42013
Gate controlled 2-DEG varactor for VCO applications in microwave circuits
A Anwar, B Nabet, R Ragi, JE Manzoli, MA Romero
Microelectronics journal 33 (5-6), 495-500, 2002
42002
A Physics Based RTD Model Accounting for Space Charge and Phonon Scattering Effects
DR Celino, AM de Souza, CLMP Plazas, R Ragi, MA Romero
Journal of Integrated Circuits and Systems 17 (1), 1-8, 2022
32022
Fully analytical compact model for the Q–V and C–V characteristics of cylindrical junctionless nanowire FETs
AM Souza, DR Celino, R Ragi, MA Romero
Microelectronics Journal 119, 1-8, 2022
22022
I–V characteristics of Schottky contacts based on quantum wires
R Ragi, MA Romero
Microelectronics journal 37 (11), 1261-1264, 2006
22006
Contribuições para a modelagem de dispositivos semicondutores baseados em contatos Schottky heterodimensionais
RAR Pereira
Universidade de São Paulo, 2003
22003
Analytical physics-based compact current–voltage model for 2D-2D resonant tunneling diodes
DR Celino, R Ragi, MA Romero
IEEE Transactions on Nanotechnology 21, 752-762, 2022
12022
(High-electron mobility transitors (HEMTs): Principles of operation and electronic characteristics)
MA Romero, R Ragi, JE Manzoli
Revista Brasileira de Ensino de Física 37, 4306-1-4306-15, 2015
12015
A novel self consistent calculation approach for the capacitance‐voltage characteristics of semiconductor quantum wire transistors based on a split‐gate configuration
R Ragi, RVT da Nobrega, MA Romero
COMPEL-The international journal for computation and mathematics in …, 2012
12012
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