| Crystallization process and thermal stability of Ge1Cu2Te3 amorphous thin films for use as phase change materials Y Sutou, T Kamada, M Sumiya, Y Saito, J Koike Acta materialia 60 (3), 872-880, 2012 | 98 | 2012 |
| Inverse Resistance Change Cr2Ge2Te6-Based PCRAM Enabling Ultralow-Energy Amorphization S Hatayama, Y Sutou, S Shindo, Y Saito, YH Song, D Ando, J Koike ACS applied materials & interfaces 10 (3), 2725-2734, 2018 | 96 | 2018 |
| Giant multiferroic effects in topological GeTe-Sb2Te3 superlattices J Tominaga, AV Kolobov, PJ Fons, X Wang, Y Saito, T Nakano, M Hase, ... Science and technology of advanced materials, 2015 | 91 | 2015 |
| Atomic Reconfiguration of van der Waals Gaps as the Key to Switching in GeTe/Sb2Te3 Superlattices AV Kolobov, P Fons, Y Saito, J Tominaga ACS omega 2 (9), 6223-6232, 2017 | 79 | 2017 |
| Self‐organized van der Waals epitaxy of layered chalcogenide structures Y Saito, P Fons, AV Kolobov, J Tominaga physica status solidi (b) 252 (10), 2151-2158, 2015 | 75 | 2015 |
| Mirror-symmetric Magneto-optical Kerr Rotation using Visible Light in [(GeTe)2(Sb2Te3)1]n Topological Superlattices D Bang, H Awano, J Tominaga, AV Kolobov, P Fons, Y Saito, K Makino, ... Scientific reports 4 (1), 5727, 2014 | 71 | 2014 |
| Optical contrast and laser-induced phase transition in GeCu2Te3 thin film Y Saito, Y Sutou, J Koike Applied Physics Letters 102 (5), 2013 | 63 | 2013 |
| Significant volume expansion as a precursor to ablation and micropattern formation in phase change material induced by intense terahertz pulses K Makino, K Kato, K Takano, Y Saito, J Tominaga, T Nakano, G Isoyama, ... Scientific Reports 8 (1), 2914, 2018 | 61 | 2018 |
| Crystallization and electrical characteristics of Ge1Cu2Te3 films for phase change random access memory T Kamada, Y Sutou, M Sumiya, Y Saito, J Koike Thin Solid Films 520 (13), 4389-4393, 2012 | 60 | 2012 |
| A two-step process for growth of highly oriented Sb2Te3 using sputtering Y Saito, P Fons, L Bolotov, N Miyata, AV Kolobov, J Tominaga AIP Advances 6 (4), 2016 | 59 | 2016 |
| THz Pulse Detection by Multilayered GeTe/Sb2Te3 K Makino, S Kuromiya, K Takano, K Kato, M Nakajima, Y Saito, ... ACS Applied Materials & Interfaces 8 (47), 32408-32413, 2016 | 50 | 2016 |
| Terahertz spectroscopic characterization of Ge 2 Sb 2 Te 5 phase change materials for photonics applications K Makino, K Kato, Y Saito, P Fons, AV Kolobov, J Tominaga, T Nakano, ... Journal of Materials Chemistry C 7 (27), 8209-8215, 2019 | 45 | 2019 |
| Origin of resistivity contrast in interfacial phase-change memory: The crucial role of Ge/Sb intermixing Y Saito, AV Kolobov, P Fons, KV Mitrofanov, K Makino, J Tominaga, ... Applied Physics Letters 114 (13), 2019 | 40 | 2019 |
| Fourfold coordinated Te atoms in amorphous GeCu2Te3 phase change material P Jóvári, Y Sutou, I Kaban, Y Saito, J Koike Scripta Materialia 68 (2), 122-125, 2013 | 39 | 2013 |
| Ab‐initio calculations and structural studies of (SiTe) 2 (Sb2Te3) n (n: 1, 2, 4 and 6) phase‐change superlattice films Y Saito, J Tominaga, P Fons, AV Kolobov, T Nakano physica status solidi (RRL)-Rapid Research Letters 8 (4), 302-306, 2014 | 37 | 2014 |
| Phase change characteristics in GeTe–CuTe pseudobinary alloy films Y Saito, Y Sutou, J Koike The Journal of Physical Chemistry C 118 (46), 26973-26980, 2014 | 34 | 2014 |
| Contact resistivity of amorphous and crystalline GeCu2Te3 to W electrode for phase change random access memory S Shindo, Y Sutou, J Koike, Y Saito, YH Song Materials Science in Semiconductor Processing 47, 1-6, 2016 | 32 | 2016 |
| 55-µA GexTe1−x/Sb2Te3superlattice topological-switching random access memory (TRAM) and study of atomic arrangement in Ge-Te and Sb-Te structures N Takaura, T Ohyanagi, M Tai, M Kinoshita, K Akita, T Morikawa, ... 2014 IEEE International Electron Devices Meeting, 29.2. 1-29.2. 4, 2014 | 31* | 2014 |
| Cr-Triggered Local Structural Change in Cr2Ge2Te6 Phase Change Material S Hatayama, Y Shuang, P Fons, Y Saito, AV Kolobov, K Kobayashi, ... ACS applied materials & interfaces 11 (46), 43320-43329, 2019 | 30 | 2019 |
| Amorphous-to-Crystal Transition in Quasi-Two-Dimensional MoS2: Implications for 2D Electronic Devices M Krbal, V Prokop, AA Kononov, JR Pereira, J Mistrik, AV Kolobov, ... ACS Applied Nano Materials 4 (9), 8834-8844, 2021 | 28 | 2021 |
Paul FonsProfessor at Keio University在 keio.jp 的电子邮件经过验证
