| Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si L Colace, G Masini, F Galluzzi, G Assanto, G Capellini, L Di Gaspare, ... Applied Physics Letters 72 (24), 3175-3177, 1998 | 361 | 1998 |
| Ge–Si intermixing in Ge quantum dots on Si (001) and Si (111) F Boscherini, G Capellini, L Di Gaspare, F Rosei, N Motta, S Mobilio Applied Physics Letters 76 (6), 682-684, 2000 | 156 | 2000 |
| Low-Energy Yield Spectroscopy as a Novel Technique for Determining Band Offsets: Application to the Heterostructure M Sebastiani, L Di Gaspare, G Capellini, C Bittencourt, F Evangelisti Physical review letters 75 (18), 3352, 1995 | 113 | 1995 |
| Atomic force microscopy study of self-organized Ge islands grown on Si (100) by low pressure chemical vapor deposition G Capellini, L Di Gaspare, F Evangelisti, E Palange Applied Physics Letters 70 (4), 493-495, 1997 | 104 | 1997 |
| Atomic force microscopy and photoluminescence study of Ge layers and self‐organized Ge quantum dots on Si (100) E Palange, G Capellini, L Di Gaspare, F Evangelisti Applied physics letters 68 (21), 2982-2984, 1996 | 67 | 1996 |
| Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions T Grange, D Stark, G Scalari, J Faist, L Persichetti, L Di Gaspare, ... Applied Physics Letters 114 (11), 2019 | 64 | 2019 |
| Investigating the CVD synthesis of graphene on Ge (100): toward layer-by-layer growth AM Scaparro, V Miseikis, C Coletti, A Notargiacomo, M Pea, M De Seta, ... ACS applied materials & interfaces 8 (48), 33083-33090, 2016 | 63 | 2016 |
| Ge/Si (001) photodetector for near infrared light L Colace, G Masini, F Galluzzi, G Assanto, G Capellini, L Di Gaspare, ... Solid State Phenomena 54, 55-58, 1997 | 62 | 1997 |
| Ge–Si intermixing in Ge quantum dots on Si F Boscherini, G Capellini, L Di Gaspare, M De Seta, F Rosei, A Sgarlata, ... Thin Solid Films 380 (1-2), 173-175, 2000 | 52 | 2000 |
| Comparison of static and dynamic 18F-FDG PET/CT for quantification of pulmonary inflammation in acute lung injury A Braune, F Hofheinz, T Bluth, T Kiss, J Wittenstein, M Scharffenberg, ... Journal of Nuclear Medicine 60 (11), 1629-1634, 2019 | 49* | 2019 |
| Early stage of CVD graphene synthesis on Ge (001) substrate L Di Gaspare, AM Scaparro, M Fanfoni, L Fazi, A Sgarlata, ... Carbon 134, 183-188, 2018 | 37 | 2018 |
| Atomic-scale insights into semiconductor heterostructures: from experimental three-dimensional analysis of the interface to a generalized theory of interfacial roughness scattering T Grange, S Mukherjee, G Capellini, M Montanari, L Persichetti, ... Physical Review Applied 13 (4), 044062, 2020 | 36 | 2020 |
| Blending CoS and Pt for amelioration of electrodeposited transparent counterelectrodes and the efficiency of back-illuminated dye solar cells F De Rossi, L Di Gaspare, A Reale, A Di Carlo, TM Brown Journal of Materials Chemistry A 1 (41), 12941-12947, 2013 | 35 | 2013 |
| Control of Electron-State Coupling in Asymmetric Quantum Wells C Ciano, M Virgilio, M Montanari, L Persichetti, L Di Gaspare, M Ortolani, ... Physical Review Applied 11 (1), 014003, 2019 | 34 | 2019 |
| Physical mechanisms of intersubband-absorption linewidth broadening in -Ge/SiGe quantum wells M Virgilio, D Sabbagh, M Ortolani, L Di Gaspare, G Capellini, M De Seta Physical Review B 90 (15), 155420, 2014 | 34 | 2014 |
| Reduction of threading dislocation density beyond the saturation limit by optimized reverse grading O Skibitzki, MH Zoellner, F Rovaris, MA Schubert, Y Yamamoto, ... Physical Review Materials 4 (10), 103403, 2020 | 32 | 2020 |
| Single-electron transistor based on modulation-doped SiGe heterostructures A Notargiacomo, L Di Gaspare, G Scappucci, G Mariottini, F Evangelisti, ... Applied physics letters 83 (2), 302-304, 2003 | 32 | 2003 |
| Evolution of Ge∕ Si (001) islands during Si capping at high temperature G Capellini, M De Seta, L Di Gaspare, F Evangelisti, F d’Acapito Journal of applied physics 98 (12), 2005 | 29 | 2005 |
| Investigation of SiGe-heterostructure nanowires E Giovine, A Notargiacomo, L Di Gaspare, E Palange, F Evangelisti, ... Nanotechnology 12 (2), 132, 2001 | 29 | 2001 |
| Strain relaxation by pit formation in epitaxial SiGe alloy films grown on Si (001) L Di Gaspare, E Palange, G Capellini, F Evangelisti Journal of Applied Physics 88 (1), 120-123, 2000 | 28 | 2000 |
Giovanni CapelliniFull Professor, Università Roma Tre and IHP Leibniz Institute for High Performance Microelectronics在 uniroma3.it 的电子邮件经过验证
