关注
Kasidit Toprasertpong
Kasidit Toprasertpong
其他姓名トープラサートポン カシディット, トープラサートポン カシディット, K Toprasertpong
The University of Tokyo; Stanford University
在 mosfet.t.u-tokyo.ac.jp 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
100‐period, 1.23‐eV bandgap InGaAs/GaAsP quantum wells for high‐efficiency GaAs solar cells: toward current‐matched Ge‐based tandem cells
H Fujii, K Toprasertpong, Y Wang, K Watanabe, M Sugiyama, Y Nakano
Progress in Photovoltaics: Research and Applications 22 (7), 784-795, 2014
1092014
Direct observation of interface charge behaviors in FeFET by quasi-static split CV and Hall techniques: Revealing FeFET operation
K Toprasertpong, M Takenaka, S Takagi
2019 IEEE International Electron Devices Meeting (IEDM), 23.7. 1-23.7. 4, 2019
912019
Absorption threshold extended to 1.15 eV using InGaAs/GaAsP quantum wells for over‐50%‐efficient lattice‐matched quad‐junction solar cells
K Toprasertpong, H Fujii, T Thomas, M Führer, D Alonso‐Álvarez, ...
Progress in Photovoltaics: Research and Applications 24 (4), 533–542, 2016
802016
Improved Ferroelectric/Semiconductor Interface Properties in Hf0.5Zr0.5O2 Ferroelectric FETs by Low-Temperature Annealing
K Toprasertpong, K Tahara, T Fukui, Z Lin, K Watanabe, M Takenaka, ...
IEEE Electron Device Letters 41 (10), 1588-1591, 2020
782020
High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics
R Nur, T Tsuchiya, K Toprasertpong, K Terabe, S Takagi, M Takenaka
Communications Materials 1 (1), 103, 2020
662020
Si microring resonator crossbar array for on-chip inference and training of the optical neural network
S Ohno, R Tang, K Toprasertpong, S Takagi, M Takenaka
Acs Photonics 9 (8), 2614-2622, 2022
562022
Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf0.5Zr0.5O2 Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 …
K Toprasertpong, K Tahara, Y Hikosaka, K Nakamura, H Saito, ...
ACS Applied Materials & Interfaces 14 (45), 51137-51148, 2022
542022
Evaluation of polarization characteristics in metal/ferroelectric/semiconductor capacitors and ferroelectric field-effect transistors
K Toprasertpong, K Tahara, M Takenaka, S Takagi
Applied Physics Letters 116 (24), 242903, 2020
532020
Asymmetric polarization response of electrons and holes in Si FeFETs: Demonstration of absolute polarization hysteresis loop and inversion hole density over 2× 1013 cm− 2
K Toprasertpong, ZY Lin, TE Lee, M Takenaka, S Takagi
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
402020
Evaluation of carrier collection efficiency in multiple quantum well solar cells
H Fujii, K Toprasertpong, K Watanabe, M Sugiyama, Y Nakano
IEEE Journal of Photovoltaics 4 (1), 237-243, 2013
39*2013
Reservoir computing on a silicon platform with a ferroelectric field-effect transistor
K Toprasertpong, E Nako, Z Wang, R Nakane, M Takenaka, S Takagi
Communications Engineering 1 (1), 21, 2022
382022
Memory window in ferroelectric field-effect transistors: Analytical approach
K Toprasertpong, M Takenaka, S Takagi
IEEE Transactions on Electron Devices 69 (12), 7113-7119, 2022
362022
Quantum wire‐on‐well (WoW) cell with long carrier lifetime for efficient carrier transport
M Sugiyama, H Fujii, T Katoh, K Toprasertpong, H Sodabanlu, ...
Progress in Photovoltaics: Research and Applications 24 (12), 1606-1614, 2016
352016
Strategy toward HZO BEOL-FeRAM with low-voltage operation (≤ 1.2 V), low process temperature, and high endurance by thickness scaling
K Tahara, K Toprasertpong, Y Hikosaka, K Nakamura, H Saito, ...
2021 Symposium on VLSI Technology, 1-2, 2021
322021
Enhanced light trapping in multiple quantum wells by thin-film structure and backside grooves with dielectric interface
T Inoue, K Watanabe, K Toprasertpong, H Fujii, M Sugiyama, Y Nakano
IEEE Journal of Photovoltaics 5 (2), 697-703, 2015
322015
Proposal and experimental demonstration of reservoir computing using Hf0. 5Zr0. 5O2/Si FeFETs for neuromorphic applications
E Nako, K Toprasertpong, R Nakane, Z Wang, Y Miyatake, M Takenaka, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
282020
Effective mobility for sequential carrier transport in multiple quantum well structures
K Toprasertpong, SM Goodnick, Y Nakano, M Sugiyama
Physical Review B 96 (7), 075441, 2017
28*2017
Energy-efficient reliable HZO FeFET computation-in-memory with local multiply & global accumulate array for source-follower & charge-sharing voltage sensing
C Matsui, K Toprasertpong, S Takagi, K Takeuchi
2021 Symposium on VLSI Technology, 1-2, 2021
262021
Investigation and modeling of photocurrent collection process in multiple quantum well solar cells
K Toprasertpong, T Inoue, Y Nakano, M Sugiyama
Solar Energy Materials and Solar Cells 174, 146-156, 2018
26*2018
Carrier time-of-flight measurement using a probe structure for direct evaluation of carrier transport in multiple quantum well solar cells
K Toprasertpong, N Kasamatsu, H Fujii, T Kada, S Asahi, Y Wang, ...
IEEE Journal of Photovoltaics 4 (6), 1518-1525, 2014
242014
系统目前无法执行此操作,请稍后再试。
文章 1–20