| Comparative Monte Carlo analysis of InP-and GaN-based Gunn diodes S García, S Pérez, I Íñiguez-de-la-Torre, J Mateos, T González Journal of Applied Physics 115 (4), 044510, 2014 | 42 | 2014 |
| Impact of substrate and thermal boundary resistance on the performance of AlGaN/GaN HEMTs analyzed by means of electro-thermal Monte Carlo simulations S García, I Íñiguez-de-la-Torre, J Mateos, T González, S Pérez Semiconductor Science and Technology 31 (6), 065005, 2016 | 36 | 2016 |
| Numerical study of sub-millimeter Gunn oscillations in InP and GaN vertical diodes: Dependence on bias, doping, and length S García, I Iniguez-de-la-Torre, S Pérez, J Mateos, T González Journal of Applied Physics 114 (7), 074503, 2013 | 27 | 2013 |
| Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method S García, I Íñiguez-de-la-Torre, O García-Pérez, J Mateos, T González, ... Semiconductor Science and Technology 30 (3), 035001, 2015 | 13 | 2015 |
| Non-linear thermal resistance model for the simulation of high power GaN-based devices S García-Sánchez, I Íñiguez-de-la-Torre, S Pérez, K Ranjan, M Agrawal, ... Semiconductor Science and Technology 36 (5), 055002, 2021 | 12 | 2021 |
| Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes S García-Sánchez, I Íñiguez-de-la-Torre, S Pérez, T González, J Mateos IEEE Transactions on Electron Devices 69 (2), 514-520, 2021 | 9 | 2021 |
| Time-domain Monte Carlo simulations of resonant-circuit operation of GaN Gunn diodes S García, BG Vasallo, J Mateos, T González 2013 Spanish Conference on Electron Devices, 79-82, 2013 | 8 | 2013 |
| Design and fabrication of planar gunn nanodiodes based on doped GaN J Mateos, T González, I Íñiguez-de-la-Torre, S García, S Pérez, ... 2019 IEEE Asia-Pacific Microwave Conference (APMC), 971-973, 2019 | 7 | 2019 |
| GaN-based SSD structure for THz applications M Agrawal, D Nethaji, K Radhakrishnan, C Gaquiere, G Ducournau, ... 2019 IEEE Asia-Pacific Microwave Conference (APMC), 213-215, 2019 | 6 | 2019 |
| On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes S García-Sánchez, M Abou Daher, M Lesecq, L Huo, R Lingaparthi, ... IEEE Transactions on Electron Devices, 2023 | 5 | 2023 |
| Monte Carlo analysis of thermal effects in the DC and AC performance of AlGaN/GaN HEMTs H Sánchez-Martín, I Íñiguez-de-la-Torre, S García-Sánchez, J Mateos, ... Solid-State Electronics 193, 108289, 2022 | 5 | 2022 |
| Modelling of Thermal Boundary Resistance in a GaN Diode by means of Electro-Thermal Monte Carlo Simulations S García, I Íñiguez-de-la-Torre, Ó García-Pérez, J Mateos, T González, ... Journal of Physics: Conference Series 609 (1), 012005, 2015 | 5 | 2015 |
| A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes S García-Sánchez, R Rengel, S Pérez, T González, J Mateos IEEE Transactions on Electron Devices, 2023 | 3 | 2023 |
| High-Frequency Microwave Detection With GaN HEMTs in the Subthreshold Regime G Paz-Martínez, I Íñiguez-de-la-Torre, P Artillan, H Sánchez-Martín, ... IEEE Transactions on Microwave Theory and Techniques, 2023 | 1 | 2023 |
| 2D MoS2 under switching field conditions: Study of high-frequency noise velocity fluctuations JM Iglesias, E Pascual, S García-Sánchez, R Rengel Applied Physics Letters 123 (5), 2023 | 1 | 2023 |
| Evaluation of the thermal resistance in GaN-diodes by means of electro-thermal Monte Carlo simulations S García, I Íñiguez-de-la-Torre, Ó García-Pérez, J Mateos, T González, ... 2015 10th Spanish Conference on Electron Devices (CDE), 1-4, 2015 | 1 | 2015 |
| Monte Carlo analysis of Gunn Oscillations and thermal effects in GaN-Based devices S García Sánchez | 1 | 2015 |
| Hybrid AI-Thermal Model Trained via Monte Carlo Simulations to Study Self-Heating Effects S García-Sánchez, I Íñiguez-de-la-Torre, T González, J Mateos IEEE Transactions on Electron Devices, 2024 | | 2024 |
| Monte Carlo Study of Gunn Oscillations in Geometrically Shaped Planar Gunn Diodes Based on Doped GaN: Influence of Geometry, Intervalley Energy, and Temperature S García-Sánchez, I Íñiguez-de-la-Torre, S Pérez, T González, J Mateos IEEE Transactions on Electron Devices, 2024 | | 2024 |
| Small-Signal Equivalent Circuit Model as a Tool for Optimizing Millimeter-Wave Detection With FETs G Paz-Martínez, I Íñiguez-de-la-Torre, P Artillan, E Rochefeuille, ... IEEE Transactions on Electron Devices, 2024 | | 2024 |
Javier Mateos (ORCID:0000-0003-404...Universidad de Salamanca, Catedrático de Electrónica在 usal.es 的电子邮件经过验证
