| MBE-grown metamorphic lasers for applications at telecom wavelengths NN Ledentsov, VA Shchukin, T Kettler, K Posilovic, D Bimberg, ... Journal of crystal growth 301, 914-922, 2007 | 65 | 2007 |
| 6-mW single-mode high-speed 1550-nm wafer-fused VCSELs for DWDM application AV Babichev, LY Karachinsky, II Novikov, AG Gladyshev, SA Blokhin, ... IEEE Journal of Quantum Electronics 53 (6), 1-8, 2017 | 62 | 2017 |
| Ultra high-speed electro-optically modulated VCSELs: modeling and experimental results VA Shchukin, NN Ledentsov, JA Lott, H Quast, F Hopfer, LY Karachinsky, ... Physics and Simulation of Optoelectronic Devices XVI 6889, 98-112, 2008 | 51 | 2008 |
| Metamorphic 1.5 µm-range quantum dot lasers on a GaAs substrate LY Karachinsky, T Kettler, II Novikov, YM Shernyakov, NY Gordeev, ... Semiconductor science and technology 21 (5), 691, 2006 | 47 | 2006 |
| Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates LY Karachinsky, S Pellegrini, GS Buller, AS Shkolnik, NY Gordeev, ... Applied physics letters 84 (1), 7-9, 2004 | 47 | 2004 |
| Heterostructures for quantum-cascade lasers of the wavelength range of 7–8 μm AV Babichev, AG Gladyshev, AV Filimonov, VN Nevedomskii, ... Technical Physics Letters 43, 666-669, 2017 | 46 | 2017 |
| High-power singlemode CW operation of 1.5 µm-range quantum dot GaAs-based laser LY Karachinsky, T Kettler, NY Gordeev, II Novikov, MV Maximov, ... Electronics Letters 41 (8), 1, 2005 | 42 | 2005 |
| High-power low-beam divergence edge-emitting semiconductor lasers with 1-and 2-D photonic bandgap crystal waveguide MV Maximov, YM Shernyakov, II Novikov, LY Karachinsky, NY Gordeev, ... IEEE Journal of Selected Topics in Quantum Electronics 14 (4), 1113-1122, 2008 | 41 | 2008 |
| High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence MV Maximov, YM Shernyakov, II Novikov, SM Kuznetsov, LY Karachinsky, ... IEEE journal of quantum electronics 41 (11), 1341-1348, 2005 | 41 | 2005 |
| High-power high-brightness semiconductor lasers based on novel waveguide concepts D Bimberg, K Posilovic, V Kalosha, T Kettler, D Seidlitz, VA Shchukin, ... Novel In-Plane Semiconductor Lasers IX 7616, 321-334, 2010 | 39 | 2010 |
| Effect of p-doping of the active region on the temperature stability of InAs/GaAs QD lasers II Novikov, NY Gordeev, LY Karachinskii, MV Maksimov, YM Shernyakov, ... Semiconductors 39, 477-480, 2005 | 39 | 2005 |
| Wavelength-stabilized tilted cavity quantum dot laser NN Ledentsov, VA Shchukin, SS Mikhrin, IL Krestnikov, AV Kozhukhov, ... Semiconductor science and technology 19 (10), 1183, 2004 | 37 | 2004 |
| Reliability performance of 25 Gbit s− 1 850 nm vertical-cavity surface-emitting lasers LY Karachinsky, SA Blokhin, II Novikov, NA Maleev, AG Kuzmenkov, ... Semiconductor science and technology 28 (6), 065010, 2013 | 33 | 2013 |
| Tilted wave lasers: A way to high brightness sources of light V Shchukin, N Ledentsov, K Posilovic, V Kalosha, T Kettler, D Seidlitz, ... IEEE Journal of Quantum Electronics 47 (7), 1014-1027, 2011 | 33 | 2011 |
| High-power (> 1 W) room-temperature quantum-cascade lasers for the long-wavelength IR region VV Dudelev, DA Mikhailov, AV Babichev, AD Andreev, SN Losev, ... Quantum Electronics 50 (2), 141, 2020 | 32 | 2020 |
| Degradation-robust single mode continuous wave operation of 1.46 μm metamorphic quantum dot lasers on GaAs substrate T Kettler, LY Karachinsky, NN Ledentsov, VA Shchukin, G Fiol, M Kuntz, ... Applied physics letters 89 (4), 2006 | 32 | 2006 |
| High-Power Quantum-Cascade Lasers Emitting in the 8-μm Wavelength Range AV Babichev, VV Dudelev, AG Gladyshev, DA Mikhailov, AS Kurochkin, ... Technical Physics Letters 45, 735-738, 2019 | 31 | 2019 |
| Progress on single mode VCSELs for data-and tele-communications NN Ledentsov, JA Lott, JR Kropp, VA Shchukin, D Bimberg, P Moser, ... Vertical-Cavity Surface-Emitting Lasers XVI 8276, 160-170, 2012 | 31 | 2012 |
| Single mode cw operation of 658nm AlGaInP lasers based on longitudinal photonic band gap crystal II Novikov, LY Karachinsky, MV Maximov, YM Shernyakov, SM Kuznetsov, ... Applied physics letters 88 (23), 2006 | 31 | 2006 |
| High power single mode 1300-nm superlattice based VCSEL: Impact of the buried tunnel junction diameter on performance SA Blokhin, AV Babichev, AG Gladyshev, LY Karachinsky, II Novikov, ... IEEE Journal of Quantum Electronics 58 (2), 1-15, 2022 | 29 | 2022 |
Innokenty NovikovConnector Optics LLC, ITMO University, Ioffe Physical-Technical Institute在 switch.ioffe.ru 的电子邮件经过验证
