| 10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ... 2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011 | 905 | 2011 |
| A bipolar-selected phase change memory featuring multi-level cell storage F Bedeschi, R Fackenthal, C Resta, EM Donze, M Jagasivamani, ... IEEE Journal of Solid-State Circuits 44 (1), 217-227, 2008 | 402 | 2008 |
| Endurance/Retention Trade-off onCap 1T1R Bipolar RRAM YY Chen, L Goux, S Clima, B Govoreanu, R Degraeve, GS Kar, A Fantini, ... IEEE Transactions on electron devices 60 (3), 1114-1121, 2013 | 287 | 2013 |
| Intrinsic switching variability in HfO2RRAM A Fantini, L Goux, R Degraeve, DJ Wouters, N Raghavan, G Kar, ... 2013 5th IEEE International Memory Workshop, 30-33, 2013 | 256 | 2013 |
| Balancing SET/RESET Pulse forEndurance in1T1R Bipolar RRAM YY Chen, B Govoreanu, L Goux, R Degraeve, A Fantini, GS Kar, ... IEEE Transactions on Electron devices 59 (12), 3243-3249, 2012 | 217 | 2012 |
| Imaging the three-dimensional conductive channel in filamentary-based oxide resistive switching memory U Celano, L Goux, R Degraeve, A Fantini, O Richard, H Bender, ... Nano letters 15 (12), 7970-7975, 2015 | 197 | 2015 |
| A multi-level-cell bipolar-selected phase-change memory F Bedeschi, R Fackenthal, C Resta, EM Donze, M Jagasivamani, E Buda, ... 2008 IEEE International Solid-State Circuits Conference-Digest of Technical …, 2008 | 163 | 2008 |
| Electrical behavior of phase-change memory cells based on GeTe L Perniola, V Sousa, A Fantini, E Arbaoui, A Bastard, M Armand, ... IEEE Electron Device Letters 31 (5), 488-490, 2010 | 159 | 2010 |
| Improvement of data retention in HfO2/Hf 1T1R RRAM cell under low operating current YY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ... 2013 IEEE International Electron Devices Meeting, 10.1. 1-10.1. 4, 2013 | 137 | 2013 |
| Causes and consequences of the stochastic aspect of filamentary RRAM R Degraeve, A Fantini, N Raghavan, L Goux, S Clima, B Govoreanu, ... Microelectronic Engineering 147, 171-175, 2015 | 126 | 2015 |
| Dynamic ‘hour glass’ model for SET and RESET in HfO2 RRAM R Degraeve, A Fantini, S Clima, B Govoreanu, L Goux, YY Chen, ... 2012 Symposium on VLSI Technology (VLSIT), 75-76, 2012 | 119 | 2012 |
| International Electron Devices Meeting YY Chen, R Degraeve, S Clima, B Govoreanu, L Goux, A Fantini, GS Kar, ... IEEE, Washington, DC, 402, 2011 | 114 | 2011 |
| Understanding of the endurance failure in scaled HfO2-based 1T1R RRAM through vacancy mobility degradation YY Chen, R Degraeve, S Clima, B Govoreanu, L Goux, A Fantini, GS Kar, ... 2012 International Electron Devices Meeting, 20.3. 1-20.3. 4, 2012 | 109 | 2012 |
| Carbon-doped GeTe: a promising material for phase-change memories GB Beneventi, L Perniola, V Sousa, E Gourvest, S Maitrejean, JC Bastien, ... Solid-State Electronics 65, 197-204, 2011 | 99 | 2011 |
| Ultralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering L Goux, A Fantini, G Kar, YY Chen, N Jossart, R Degraeve, S Clima, ... 2012 Symposium on VLSI Technology (VLSIT), 159-160, 2012 | 94 | 2012 |
| Intrinsic switching behavior in HfO2 RRAM by fast electrical measurements on novel 2R test structures A Fantini, DJ Wouters, R Degraeve, L Goux, L Pantisano, G Kar, YY Chen, ... 2012 4th IEEE International Memory Workshop, 1-4, 2012 | 89 | 2012 |
| A Thermally Stable and High-Performance 90-nm-Based 1T1R CBRAM Cell A Belmonte, W Kim, BT Chan, N Heylen, A Fantini, M Houssa, M Jurczak, ... IEEE transactions on electron devices 60 (11), 3690-3695, 2013 | 87 | 2013 |
| Intrinsic program instability in HfO2 RRAM and consequences on program algorithms A Fantini, G Gorine, R Degraeve, L Goux, CY Chen, A Redolfi, S Clima, ... 2015 IEEE International Electron Devices Meeting (IEDM), 7.5. 1-7.5. 4, 2015 | 85 | 2015 |
| Microscopic origin of random telegraph noise fluctuations in aggressively scaled RRAM and its impact on read disturb variability N Raghavan, R Degraeve, A Fantini, L Goux, S Strangio, B Govoreanu, ... 2013 IEEE International Reliability Physics Symposium (IRPS), 5E. 3.1-5E. 3.7, 2013 | 84 | 2013 |
| Analysis of complementary RRAM switching DJ Wouters, L Zhang, A Fantini, R Degraeve, L Goux, YY Chen, ... IEEE electron device letters 33 (8), 1186-1188, 2012 | 77 | 2012 |
Gouximec在 imec.be 的电子邮件经过验证
