| Regrowth-free GaN-based complementary logic on a Si substrate N Chowdhury, Q Xie, M Yuan, K Cheng, HW Then, T Palacios IEEE Electron Device Letters 41 (6), 820-823, 2020 | 112 | 2020 |
| 720-V/0.35-m cm2 Fully Vertical GaN-on-Si Power Diodes by Selective Removal of Si Substrates and Buffer Layers Y Zhang, M Yuan, N Chowdhury, K Cheng, T Palacios IEEE Electron Device Letters 39 (5), 715-718, 2018 | 100 | 2018 |
| First demonstration of a self-aligned GaN p-FET N Chowdhury, Q Xie, M Yuan, NS Rajput, P Xiang, K Cheng, HW Then, ... 2019 IEEE International Electron Devices Meeting (IEDM), 4.6. 1-4.6. 4, 2019 | 48 | 2019 |
| GaN ring oscillators operational at 500° C based on a GaN-on-Si platform M Yuan, Q Xie, K Fu, T Hossain, J Niroula, JA Greer, N Chowdhury, ... IEEE Electron Device Letters 43 (11), 1842-1845, 2022 | 21 | 2022 |
| High temperature robustness of enhancement-mode p-GaN-gated AlGaN/GaN HEMT technology M Yuan, Q Xie, J Niroula, MF Isamotu, NS Rajput, N Chowdhury, ... 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA …, 2022 | 15 | 2022 |
| Highly scaled GaN complementary technology on a silicon substrate Q Xie, M Yuan, J Niroula, B Sikder, JA Greer, NS Rajput, N Chowdhury, ... IEEE Transactions on Electron Devices 70 (4), 2121-2128, 2023 | 14 | 2023 |
| GaN memory operational at 300° C M Yuan, Q Xie, J Niroula, N Chowdhury, T Palacios IEEE Electron Device Letters 43 (12), 2053-2056, 2022 | 14 | 2022 |
| Enhancement-mode GaN transistor technology for harsh environment operation M Yuan, J Niroula, Q Xie, NS Rajput, K Fu, S Luo, SK Das, AJB Iqbal, ... IEEE Electron Device Letters 44 (7), 1068-1071, 2023 | 13 | 2023 |
| Performance estimation of GaN CMOS technology N Chowdhury, J Jung, Q Xie, M Yuan, K Cheng, T Palacios 2021 Device Research Conference (DRC), 1-2, 2021 | 12 | 2021 |
| Highly-scaled self-aligned GaN complementary technology on a GaN-on-Si platform Q Xie, M Yuan, J Niroula, JA Greer, NS Rajput, N Chowdhury, T Palacios 2022 International Electron Devices Meeting (IEDM), 35.3. 1-35.3. 4, 2022 | 10 | 2022 |
| Towards DTCO in high temperature GaN-on-Si technology: Arithmetic logic unit at 300° C and CAD framework up to 500° C Q Xie, M Yuan, J Niroula, B Sikder, S Luo, K Fu, NS Rajput, AB Pranta, ... 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 8 | 2023 |
| AlGaN/GaN-based multimetal gated high-electron-mobility transistor with improved linearity MT Azad, T Hossain, B Sikder, Q Xie, M Yuan, E Yagyu, KH Teo, ... IEEE Transactions on Electron Devices, 2023 | 7 | 2023 |
| Accurate characterization of luminescent coupling effects with voltage and light bias adjustment J Jia, Z Lyu, M Yuan, Y Chen, Y Huo, T Bilir, Y Miao, M Xue, JS Harris 2016 Ieee 43rd Photovoltaic Specialists Conference (Pvsc), 1224-1228, 2016 | 5 | 2016 |
| Titanium oxide electron-selective layers for contact passivation of thin-film crystalline silicon solar cells Y Liu, Y Chen, DT LaFehr, Y Su, Y Huo, Y Kang, H Deng, J Jia, L Zhao, ... Oxide-based Materials and Devices VII 9749, 156-163, 2016 | 5 | 2016 |
| Investigation of vertical GaN-on-GaN p–n diode with regrown p-GaN for operation in Venus and other extreme environments S Luo, K Fu, Q Xie, M Yuan, G Gao, H Guo, R Xu, N Giles, T Li, Z Mei, ... Applied Physics Letters 123 (24), 2023 | 4 | 2023 |
| Numerical modeling of photon recycling and luminescence coupling in non-ideal multijunction solar cell M Yuan, Z Lyu, J Jia, Y Chen, Y Liu, Y Huo, Y Miao, J Harris Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V 9743 …, 2016 | 3 | 2016 |
| Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments Q Xie, J Niroula, NS Rajput, M Yuan, S Luo, K Fu, MF Isamotu, RH Palash, ... Applied Physics Letters 124 (17), 2024 | 2 | 2024 |
| High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500° C J Niroula, Q Xie, NS Rajput, PK Darmawi-Iskandar, SI Rahman, S Luo, ... Applied Physics Letters 124 (20), 2024 | 1 | 2024 |
| Fermi-Level Pinning Effect in Gate Region: A Case Study of Multimetal Gated AlGaN/GaN HEMT for High RF Linearity T Hossain, B Sikder, MT Azad, Q Xie, M Yuan, E Yagyu, KH Teo, ... 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024 | 1 | 2024 |
| GaN electronics for high-temperature applications M Yuan Massachusetts Institute of Technology, 2022 | 1 | 2022 |
