| Stacking fault related luminescence at acceptors in zinc oxide M Schirra, R Schneider, A Reiser, GM Prinz, M Feneberg, J Biskupek, ... Physical Review B—Condensed Matter and Materials Physics 77 (12), 125215, 2008 | 318 | 2008 |
| High-excitation and high-resolution photoluminescence spectra of bulk AlN M Feneberg, RAR Leute, B Neuschl, K Thonke, M Bickermann Physical Review B—Condensed Matter and Materials Physics 82 (7), 075208, 2010 | 203 | 2010 |
| Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to M Feneberg, S Osterburg, K Lange, C Lidig, B Garke, R Goldhahn, ... Physical Review B 90 (7), 075203, 2014 | 182 | 2014 |
| Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates R Dalmau, B Moody, R Schlesser, S Mita, J Xie, M Feneberg, B Neuschl, ... Journal of The Electrochemical Society 158 (5), H530, 2011 | 172 | 2011 |
| Polarization fields of III-nitrides grown in different crystal orientations M Feneberg, K Thonke Journal of Physics: Condensed Matter 19 (40), 403201, 2007 | 141 | 2007 |
| Reliable polarization control of VCSELs through monolithically integrated surface gratings: a comparative theoretical and experimental study P Debernardi, JM Ostermann, M Feneberg, C Jalics, R Michalzik IEEE Journal of selected topics in quantum electronics 11 (1), 107-116, 2005 | 112 | 2005 |
| Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes C Reich, M Guttmann, M Feneberg, T Wernicke, F Mehnke, C Kuhn, ... Applied Physics Letters 107 (14), 2015 | 106 | 2015 |
| Many-electron effects on the dielectric function of cubic : Effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shift M Feneberg, J Nixdorf, C Lidig, R Goldhahn, Z Galazka, O Bierwagen, ... Physical Review B 93 (4), 045203, 2016 | 104 | 2016 |
| Band gap of corundumlike determined by absorption and ellipsometry A Segura, L Artús, R Cuscó, R Goldhahn, M Feneberg Physical Review Materials 1 (2), 024604, 2017 | 97 | 2017 |
| Optimization of nucleation and buffer layer growth for improved GaN quality J Hertkorn, P Brückner, SB Thapa, T Wunderer, F Scholz, M Feneberg, ... Journal of Crystal Growth 308 (1), 30-36, 2007 | 89 | 2007 |
| Piezoelectric fields in GaInN∕ GaN quantum wells on different crystal facets M Feneberg, F Lipski, R Sauer, K Thonke, T Wunderer, B Neubert, ... Applied Physics Letters 89 (24), 2006 | 89 | 2006 |
| Bright semipolar GaInN∕ GaN blue light emitting diode on side facets of selectively grown GaN stripes T Wunderer, P Brückner, B Neubert, F Scholz, M Feneberg, F Lipski, ... Applied physics letters 89 (4), 2006 | 85 | 2006 |
| Anisotropic absorption and emission of bulk AlN M Feneberg, MF Romero, M Röppischer, C Cobet, N Esser, B Neuschl, ... Physical Review B—Condensed Matter and Materials Physics 87 (23), 235209, 2013 | 82 | 2013 |
| Three‐dimensional GaN for semipolar light emitters T Wunderer, M Feneberg, F Lipski, J Wang, RAR Leute, S Schwaiger, ... physica status solidi (b) 248 (3), 549-560, 2011 | 82 | 2011 |
| Mahan excitons in degenerate wurtzite InN: Photoluminescence spectroscopy and reflectivity measurements M Feneberg, J Däubler, K Thonke, R Sauer, P Schley, R Goldhahn Physical Review B—Condensed Matter and Materials Physics 77 (24), 245207, 2008 | 80 | 2008 |
| Optical properties of cubic GaN from 1 to 20 eV M Feneberg, M Röppischer, C Cobet, N Esser, J Schörmann, T Schupp, ... Physical Review B—Condensed Matter and Materials Physics 85 (15), 155207, 2012 | 79 | 2012 |
| Influence of strain on the band gap energy of wurtzite InN P Schley, R Goldhahn, G Gobsch, M Feneberg, K Thonke, X Wang, ... physica status solidi (b) 246 (6), 1177-1180, 2009 | 69 | 2009 |
| Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AlN around the band edge G Rossbach, M Feneberg, M Röppischer, C Werner, N Esser, C Cobet, ... Physical Review B—Condensed Matter and Materials Physics 83 (19), 195202, 2011 | 63 | 2011 |
| basal plane stacking fault in GaN: Origin of the 3.32 eV luminescence band I Tischer, M Feneberg, M Schirra, H Yacoub, R Sauer, K Thonke, ... Physical Review B—Condensed Matter and Materials Physics 83 (3), 035314, 2011 | 62 | 2011 |
| Au-catalyzed growth processes and luminescence properties of ZnO nanopillars on Si Y Li, M Feneberg, A Reiser, M Schirra, R Enchelmaier, A Ladenburger, ... Journal of applied physics 99 (5), 2006 | 62 | 2006 |
Rüdiger GoldhahnProfessor, Otto-von-Guericke University在 ovgu.de 的电子邮件经过验证
