| Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well L Grenouillet, C Bru-Chevallier, G Guillot, P Gilet, P Duvaut, C Vannuffel, ... Applied Physics Letters 76 (16), 2241-2243, 2000 | 259 | 2000 |
| Optical interconnects L Pavesi, G Guillot Springer series in optical sciences 119, 2006 | 224 | 2006 |
| Highly selective and widely tunable 1.55-μm InP/air-gap micromachined Fabry-Perot filter for optical communications A Spisser, R Ledantec, C Seassal, JL Leclercq, T Benyattou, D Rondi, ... IEEE Photonics technology letters 10 (9), 1259-1261, 1998 | 194 | 1998 |
| Application of 3C-SiC quantum dots for living cell imaging J Botsoa, V Lysenko, A Geloen, O Marty, JM Bluet, G Guillot Applied Physics Letters 92 (17), 2008 | 188 | 2008 |
| From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001) M Gendry, C Monat, J Brault, P Regreny, G Hollinger, B Salem, G Guillot, ... Journal of applied physics 95 (9), 4761-4766, 2004 | 110 | 2004 |
| How to grow cubic GaN with low hexagonal phase content on (001) SiC by molecular beam epitaxy B Daudin, G Feuillet, J Hübner, Y Samson, F Widmann, A Philippe, ... Journal of Applied Physics 84 (4), 2295-2300, 1998 | 98 | 1998 |
| Rapid thermal annealing in structures: Effect of nitrogen reorganization on optical properties L Grenouillet, C Bru-Chevallier, G Guillot, P Gilet, P Ballet, P Duvaut, ... Journal of applied physics 91 (9), 5902-5908, 2002 | 86 | 2002 |
| The acceptor level of vanadium in III–V compounds B Clerjaud, C Naud, B Deveaud, B Lambert, B Plot, G Bremond, ... Journal of applied physics 58 (11), 4207-4215, 1985 | 86 | 1985 |
| Optical properties of silicon nanocrystal LEDs J De La Torre, A Souifi, A Poncet, C Busseret, M Lemiti, G Bremond, ... Physica E: Low-dimensional Systems and Nanostructures 16 (3-4), 326-330, 2003 | 81 | 2003 |
| Simulation of the capacitance–voltage characteristics of a single‐quantum‐well structure based on the self‐consistent solution of the Schrödinger and Poisson equations PN Brounkov, T Benyattou, G Guillot Journal of applied physics 80 (2), 864-871, 1996 | 73 | 1996 |
| Quenching effect of luminescence in bulk semi-insulating GaAs P Leyral, G Vincent, A Nouailhat, G Guillot Solid state communications 42 (1), 67-69, 1982 | 70 | 1982 |
| Tunable microcavity based on InP-air Bragg mirrors R Le Dantec, T Benyattou, G Guillot, A Spisser, C Seassal, JL Leclercq, ... IEEE journal of selected topics in quantum electronics 5 (1), 111-114, 1999 | 68 | 1999 |
| Study of trapping phenomenon in 4H-SiC MESFETs: dependence on substrate purity N Sghaier, JM Bluet, A Souifi, G Guillot, E Morvan, C Brylinski IEEE Transactions on Electron Devices 50 (2), 297-302, 2003 | 67 | 2003 |
| Deep level spectroscopy in InP: Fe G Bremond, A Nouailhat, G Guillot, B Cockayne Electronics Letters 17 (1), 55-56, 1981 | 66 | 1981 |
| 1.54 μm room‐temperature electroluminescence of erbium‐doped GaAs and GaAlAs grown by molecular beam epitaxy P Galtier, JP Pocholle, MN Charasse, B De Cremoux, JP Hirtz, B Groussin, ... Applied physics letters 55 (20), 2105-2107, 1989 | 65 | 1989 |
| Discharge mechanisms modeling in LPCVD silicon nanocrystals usingC–Vand capacitance transient techniques C Busseret, A Souifi, T Baron, G Guillot, F Martin, MN Semeria, J Gautier Superlattices and Microstructures 28 (5-6), 493-500, 2000 | 64 | 2000 |
| Experimental and theoretical investigation of carrier confinement in InAs quantum dashes grown on InP (001) P Miska, J Even, C Platz, B Salem, T Benyattou, C Bru-Chevalier, ... Journal of applied physics 95 (3), 1074-1080, 2004 | 63 | 2004 |
| Low pressure chemical vapor deposition growth of silicon quantum dots on insulator for nanoelectronics devices T Baron, F Martin, P Mur, C Wyon, M Dupuy, C Busseret, A Souifi, ... Applied surface science 164 (1-4), 29-34, 2000 | 63 | 2000 |
| Interpretation of deep-level optical spectroscopy and deep-level transient spectroscopy data: application to irradiation defects in GaAs S Loualiche, A Nouailhat, G Guillot, M Lannoo Physical Review B 30 (10), 5822, 1984 | 62 | 1984 |
| Stimulated emission from trap electronic states in oxide of nanocrystal Si WQ Huang, F Jin, HX Wang, L Xu, KY Wu, SR Liu, CJ Qin Applied Physics Letters 92 (22), 2008 | 59 | 2008 |
Georges BremondProfesseur, INSA Lyon在 insa-lyon.fr 的电子邮件经过验证
