| Effects of spin-orbit coupling on the electronic properties of the buckled III–V monolayers N Hasani, A Rajabi-Maram, SB Touski Journal of Magnetism and Magnetic Materials 543, 168638, 2022 | 15 | 2022 |
| Tuning electronic properties of MSb (M= C, Si, Ge and Sn) monolayers by strain engineering A Rajabi-Maram, N Hasani, SB Touski Physica E: Low-dimensional Systems and Nanostructures 138, 115065, 2022 | 14 | 2022 |
| Strain engineering of electronic and spin properties in SnX (X= P, As, Sb, Bi) monolayers N Hasani, A Rajabi-Maram, SB Touski Journal of Physics and Chemistry of Solids 174, 111131, 2023 | 11 | 2023 |
| Structural and electronic properties of hexagonal MXH (M= C, Si, Ge and Sn; X= N, P, As and Sb) monolayers: A first-principles prediction A Rajabi-Maram, N Hasani, SB Touski Physica E: Low-dimensional Systems and Nanostructures 151, 115710, 2023 | 7 | 2023 |
| Electrical Properties of Double-Gate Field-Effect Transistor Based on MAN (M Ti, Zr, and Hf; A Si, Ge, and Sn) Monolayers N Hasani, M Shalchian, A Rajabi-Maram, SB Touski IEEE Transactions on Electron Devices, 2023 | 6 | 2023 |
| Prediction of Band Inversion in Janus In2XYZ (X, Y, and Z= S, Se, Te) monolayers A Rajabi-Maram, SB Touski, N Hasani, M Shalchian Physical Chemistry Chemical Physics, 2024 | 1 | 2024 |
| The structural, mechanical, electronic, and optical properties of monolayer and bilayer ABC3 (A Ga, In; B Si, Ge; C S, Se, Te) A Rajabi-Maram, N Hasani, M Shalchian, SB Touski Materials Science in Semiconductor Processing 185, 108928, 2025 | | 2025 |
Shoeib Babaee TouskiHamedan University of Technology在 hut.ac.ir 的电子邮件经过验证
Shoeib Babaee TouskiHamedan University of Technology在 hut.ac.ir 的电子邮件经过验证
nona hasaniAmirkabir University of Technology在 aut.ac.ir 的电子邮件经过验证
Majid ShalchianAssociate Professor, Amir Kabir University在 aut.ac.ir 的电子邮件经过验证