| Advances in AFM for the electrical characterization of semiconductors RA Oliver Reports on Progress in Physics 71 (7), 076501, 2008 | 232 | 2008 |
| Carrier localization mechanisms in InGaN/GaN quantum wells D Watson-Parris, MJ Godfrey, P Dawson, RA Oliver, MJ Galtrey, ... Physical Review B 83 (11), 115321, 2011 | 217 | 2011 |
| Three-dimensional atom probe studies of an InxGa1− xN∕ GaN multiple quantum well structure: Assessment of possible indium clustering MJ Galtrey, RA Oliver, MJ Kappers, CJ Humphreys, DJ Stokes, PH Clifton, ... Applied physics letters 90 (6), 2007 | 211 | 2007 |
| InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal RA Oliver, GAD Briggs, MJ Kappers, CJ Humphreys, S Yasin, JH Rice, ... Applied Physics Letters 83 (4), 755-757, 2003 | 178 | 2003 |
| Efficient light-emitting diodes from mixed-dimensional perovskites on a fluoride interface B Zhao, Y Lian, L Cui, G Divitini, G Kusch, E Ruggeri, F Auras, W Li, ... Nature Electronics 3 (11), 704-710, 2020 | 174 | 2020 |
| Threading dislocation reduction in (0 0 01) GaN thin films using SiNx interlayers MJ Kappers, R Datta, RA Oliver, FDG Rayment, ME Vickers, ... Journal of Crystal Growth 300 (1), 70-74, 2007 | 154 | 2007 |
| Atom probe tomography today A Cerezo, PH Clifton, MJ Galtrey, CJ Humphreys, TF Kelly, DJ Larson, ... Materials Today 10 (12), 36-42, 2007 | 153 | 2007 |
| The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures S Hammersley, D Watson-Parris, P Dawson, MJ Godfrey, TJ Badcock, ... Journal of Applied Physics 111 (8), 2012 | 143 | 2012 |
| Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3 RA Oliver, MJ Kappers, J Sumner, R Datta, CJ Humphreys Journal of Crystal Growth 289 (2), 506-514, 2006 | 140 | 2006 |
| Growth modes in heteroepitaxy of InGaN on GaN RA Oliver, MJ Kappers, CJ Humphreys, GAD Briggs Journal of applied physics 97 (1), 2005 | 133 | 2005 |
| Three-dimensional atom probe analysis of green-and blue-emitting InxGa1− xN∕ GaN multiple quantum well structures MJ Galtrey, RA Oliver, MJ Kappers, CJ Humphreys, PH Clifton, D Larson, ... Journal of Applied Physics 104 (1), 2008 | 126 | 2008 |
| Microstructural origins of localization in InGaN quantum wells RA Oliver, SE Bennett, T Zhu, DJ Beesley, MJ Kappers, DW Saxey, ... Journal of Physics D: Applied Physics 43 (35), 354003, 2010 | 112 | 2010 |
| Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures FCP Massabuau, SL Sahonta, L Trinh-Xuan, S Rhode, TJ Puchtler, ... Applied Physics Letters 101 (21), 2012 | 105 | 2012 |
| Role of gross well-width fluctuations in bright, green-emitting single InGaN∕ GaN quantum well structures NK van der Laak, RA Oliver, MJ Kappers, CJ Humphreys Applied physics letters 90 (12), 2007 | 97 | 2007 |
| Low temperature growth of ultra-high mass density carbon nanotube forests on conductive supports H Sugime, S Esconjauregui, J Yang, L D'Arsié, RA Oliver, S Bhardwaj, ... Applied Physics Letters 103 (7), 2013 | 89 | 2013 |
| Unintentional doping in GaN T Zhu, RA Oliver Physical Chemistry Chemical Physics 14 (27), 9558-9573, 2012 | 85 | 2012 |
| The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells P Dawson, S Schulz, RA Oliver, MJ Kappers, CJ Humphreys Journal of Applied Physics 119 (18), 2016 | 82 | 2016 |
| Low threshold, room-temperature microdisk lasers in the blue spectral range I Aharonovich, A Woolf, KJ Russell, T Zhu, N Niu, MJ Kappers, RA Oliver, ... Applied Physics Letters 103 (2), 2013 | 81 | 2013 |
| Nanoscale solid-state quantum computing A Ardavan, M Austwick, SC Benjamin, GAD Briggs, TJS Denni s, ... Philosophical Transactions of the Royal Society of London. Series A …, 2003 | 81 | 2003 |
| Temporal variation in photoluminescence from single InGaN quantum dots JH Rice, JW Robinson, A Jarjour, RA Taylor, RA Oliver, GAD Briggs, ... Applied physics letters 84 (20), 4110-4112, 2004 | 80 | 2004 |
Colin HumphreysQueen Mary University of London在 qmul.ac.uk 的电子邮件经过验证
