| Synthesis of Ag-ZnO core-shell nanoparticles with enhanced photocatalytic activity through atomic layer deposition S Seong, IS Park, YC Jung, T Lee, SY Kim, JS Park, JH Ko, J Ahn Materials & Design 177, 107831, 2019 | 68 | 2019 |
| Atomic layer deposition of Y2O3 films using heteroleptic liquid (iPrCp)2Y(iPr-amd) precursor IS Park, YC Jung, S Seong, J Ahn, J Kang, W Noh, C Lansalot-Matras Journal of Materials Chemistry C 2 (43), 9240-9247, 2014 | 56 | 2014 |
| A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0. 5Zr0. 5O2 Thin Films SJ Kim, J Mohan, HS Kim, SM Hwang, N Kim, YC Jung, A Sahota, K Kim, ... Materials 13 (13), 2968, 2020 | 39 | 2020 |
| Enhanced uniformity in electrical and optical properties of ITO thin films using a wide thermal annealing system S Seong, YC Jung, T Lee, IS Park, J Ahn Materials Science in Semiconductor Processing 79, 14-19, 2018 | 36 | 2018 |
| Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications HJ Kim, Y An, YC Jung, J Mohan, JG Yoo, YI Kim, H Hernandez-Arriaga, ... physica status solidi (RRL)–Rapid Research Letters 15 (5), 2100028, 2021 | 33 | 2021 |
| Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick HfxZr1− xO2/ZrO2 bilayer by atomic layer deposition T Onaya, T Nabatame, M Inoue, YC Jung, H Hernandez-Arriaga, J Mohan, ... Applied Physics Letters 117 (23), 2020 | 28 | 2020 |
| Ferroelectric polarization retention with scaling of Hf0. 5Zr0. 5O2 on silicon J Mohan, H Hernandez-Arriaga, YC Jung, T Onaya, CY Nam, EHR Tsai, ... Applied Physics Letters 118 (10), 2021 | 24 | 2021 |
| Improved resistive switching characteristics of a Pt/HfO2/Pt resistor by controlling anode interface with forming and switching polarity YC Jung, S Seong, T Lee, SY Kim, IS Park, J Ahn Applied Surface Science 435, 117-121, 2018 | 23 | 2018 |
| Low-thermal-budget (300° C) ferroelectric TiN/Hf0. 5Zr0. 5O2/TiN capacitors realized using high-pressure annealing SJ Kim, YC Jung, J Mohan, HJ Kim, SM Rho, MS Kim, JG Yoo, HR Park, ... Applied Physics Letters 119 (24), 2021 | 20 | 2021 |
| Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source YC Jung, SM Hwang, DN Le, ALN Kondusamy, J Mohan, SW Kim, JH Kim, ... Materials 13 (15), 3387, 2020 | 17 | 2020 |
| Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1− xO2 thin films using synchrotron x-ray analysis T Onaya, T Nabatame, YC Jung, H Hernandez-Arriaga, J Mohan, HS Kim, ... APL Materials 9 (3), 2021 | 15 | 2021 |
| Structural, chemical, and electrical properties of Y2O3 thin films grown by atomic layer deposition with an (iPrCp)2Y(iPr-amd) precursor JH Kang, YC Jung, S Seong, T Lee, J Ahn, W Noh, IS Park Materials Science in Semiconductor Processing 63, 279-284, 2017 | 15 | 2017 |
| Improvement of Ferroelectricity and Fatigue Property of Thicker HfxZr1− XO2/ZrO2 Bi-layer T Onaya, T Nabatame, M Inoue, YC Jung, H Hernandez-Arriaga, J Mohan, ... ECS Transactions 98 (3), 63, 2020 | 13 | 2020 |
| Plasma-Enhanced Atomic-Layer Deposition of Nanometer-Thick SiNx Films Using Trichlorodisilane for Etch-Resistant Coatings SM Hwang, HS Kim, DN Le, AV Ravichandran, A Sahota, J Lee, YC Jung, ... ACS Applied Nano Materials 4 (3), 2558-2564, 2021 | 11 | 2021 |
| Effects of hydrogen annealing temperature on the resistive switching characteristics of HfOx thin films YC Jung, S Seong, T Lee, SY Kim, IS Park, J Ahn Materials Science in Semiconductor Processing 88, 207-213, 2018 | 11 | 2018 |
| Fabrication of Fe3O4-ZnO core-shell nanoparticles by rotational atomic layer deposition and their multi-functional properties S Seong, YC Jung, T Lee, IS Park, J Ahn Current Applied Physics 16 (12), 1564-1570, 2016 | 11 | 2016 |
| Anode dependence of set voltage in resistive switching of metal/HfO2/metal resistors IS Park, YC Jung, J Ahn Applied Physics Letters 105 (22), 2014 | 10 | 2014 |
| Extremely Low Leakage Threshold Switch with Enhanced Characteristics via Ag Doping on Polycrystalline ZnO Fabricated by Facile Electrochemical Deposition for an X-Point Selector HS Kim, A Sahota, J Mohan, AT Lucero, YC Jung, M Kim, JS Lee, R Choi, ... ACS Applied Electronic Materials, 2021 | 9 | 2021 |
| High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor HS Kim, SM Hwang, X Meng, YC Byun, YC Jung, AV Ravichandran, ... Journal of Materials Chemistry C 8 (37), 13033-13039, 2020 | 9 | 2020 |
| Resistive Switching Characteristics of Atomic-Layer-Deposited Y2O3 Insulators with Deposition Temperature YC Jung, S Seong, T Lee, IS Park, J Ahn Journal of nanoscience and nanotechnology 15 (10), 7586-7589, 2015 | 8 | 2015 |
