| Terahertz oscillations in an In0. 53Ga0. 47As submicron planar Gunn diode A Khalid, GM Dunn, RF Macpherson, S Thoms, D Macintyre, C Li, ... Journal of Applied Physics 115 (11), 2014 | 87 | 2014 |
| Circumventing UV Light Induced Nanomorphology Disorder to Achieve Long Lifetime PTB7‐Th: PCBM Based Solar Cells Q Liu, J Toudert, F Liu, P Mantilla‐Perez, MM Bajo, TP Russell, J Martorell Advanced Energy Materials 7 (21), 1701201, 2017 | 85 | 2017 |
| On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress M Montes Bajo, C Hodges, MJ Uren, M Kuball Applied Physics Letters 101 (3), 2012 | 78 | 2012 |
| Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates N Killat, M Montes, JW Pomeroy, T Paskova, KR Evans, J Leach, X Li, ... Electron Device Letters, IEEE 33 (3), 366-368, 2012 | 78 | 2012 |
| In0.53Ga0.47As Planar Gunn Diodes Operating at a Fundamental Frequency of 164 GHz A Khalid, C Li, V Papageogiou, GM Dunn, MJ Steer, IG Thayne, M Kuball, ... IEEE Electron Device Letters 34 (1), 39-41, 2013 | 68* | 2013 |
| Homoepitaxy of non-polar ZnO/(Zn,Mg)O multi-quantum wells: From a precise growth control to the observation of intersubband transitions NL Biavan, M Hugues, MM Bajo, J Tamayo-Arriola, A Jollivet, D Lefebvre, ... Applied Physics Letters 111, 231903, 2017 | 40 | 2017 |
| Improving the performance of a neodymium aluminium borate microchip laser crystal by resonant pumping ZD Luo, YD Huang, M Montes, D Jaque Applied physics letters 85 (5), 715-717, 2004 | 33 | 2004 |
| Thermal hysteresis in the luminescence of ions in MO Ramirez, D Jaque, M Montes, J Garcıa Solé, LE Bausá, L Ivleva Applied physics letters 84 (15), 2787-2789, 2004 | 32 | 2004 |
| An extremely thin and robust interconnecting layer providing 76% fill factor in a tandem polymer solar cell architecture A Martínez-Otero, Q Liu, P Mantilla-Perez, MM Bajo, J Martorell Journal of Materials Chemistry A 3 (20), 10681-10686, 2015 | 30 | 2015 |
| Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors MM Bajo, H Sun, MJ Uren, M Kuball Applied Physics Letters 104 (22), 2014 | 30 | 2014 |
| Short infrared wavelength quantum cascade detectors based on m-plane ZnO/ZnMgO quantum wells A Jollivet, B Hinkov, S Pirotta, H Hoang, S Derelle, J Jaeck, ... Applied Physics Letters 113 (25), 2018 | 29 | 2018 |
| Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges N Killat, M Montes Bajo, T Paskova, KR Evans, J Leach, X Li, Ü Özgür, ... Applied Physics Letters 103 (19), 2013 | 28 | 2013 |
| Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer JM Ulloa, DF Reyes, M Montes, K Yamamoto, DL Sales, D Gonzalez, ... Applied Physics Letters 100 (1), 2012 | 27 | 2012 |
| Short-pulse generation from a resonantly pumped NdAl3(BO3)4 microchip laser M Montes, D Jaque, L Zundu, H Yidong Optics letters 30 (4), 397-399, 2005 | 27 | 2005 |
| Terahertz intersubband electroluminescence from nonpolar m-plane ZnO quantum cascade structures B Meng, B Hinkov, NML Biavan, HT Hoang, D Lefebvre, M Hugues, ... ACS photonics 8 (1), 343-349, 2020 | 24 | 2020 |
| Multisubband Plasmons in Doped Quantum Wells M Montes Bajo, J Tamayo-Arriola, M Hugues, JM Ulloa, N Le Biavan, ... Physical Review Applied 10 (2), 024005, 2018 | 23 | 2018 |
| Rock-salt CdZnO as a transparent conductive oxide J Tamayo-Arriola, A Huerta-Barberà, M Montes Bajo, E Muñoz, ... Applied Physics Letters 113 (22), 2018 | 22 | 2018 |
| Passive Q-switching of a diode pumped Nd3+: CGGG crystal: Benefits of inhomogeneous line broadening and short pulse generation M Montes, C de las Heras, D Jaque Optical Materials 28 (4), 408-414, 2006 | 22 | 2006 |
| Optical phase transition in semiconductor quantum metamaterials A Hierro, M Montes Bajo, M Ferraro, J Tamayo-Arriola, N Le Biavan, ... Physical Review Letters 123 (11), 117401, 2019 | 20 | 2019 |
| Reduction of impact ionization in GaAs-based planar Gunn diodes by anode contact design M Montes, G Dunn, A Stephen, A Khalid, C Li, D Cumming, CH Oxley, ... IEEE transactions on electron devices 59 (3), 654-660, 2011 | 19 | 2011 |
