| Origin of the ultra‐nonlinear switching kinetics in oxide‐based resistive switches S Menzel, M Waters, A Marchewka, U Böttger, R Dittmann, R Waser Advanced Functional Materials 21 (23), 4487-4492, 2011 | 388 | 2011 |
| 2022 roadmap on neuromorphic computing and engineering DV Christensen, R Dittmann, B Linares-Barranco, A Sebastian, ... Neuromorphic Computing and Engineering 2 (2), 022501, 2022 | 375 | 2022 |
| Towards oxide electronics: a roadmap M Coll, J Fontcuberta, M Althammer, M Bibes, H Boschker, A Calleja, ... Applied surface science 482, 1-93, 2019 | 296 | 2019 |
| Physics of the switching kinetics in resistive memories S Menzel, U Böttger, M Wimmer, M Salinga Advanced functional materials 25 (40), 6306-6325, 2015 | 292 | 2015 |
| Understanding the switching-off mechanism in Ag+ migration based resistively switching model systems X Guo, C Schindler, S Menzel, R Waser Applied Physics Letters 91 (13), 2007 | 292 | 2007 |
| Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide S Starschich, S Menzel, U Böttger Applied Physics Letters 108 (3), 2016 | 256 | 2016 |
| Switching kinetics of electrochemical metallization memory cells S Menzel, S Tappertzhofen, R Waser, I Valov Physical Chemistry Chemical Physics 15 (18), 6945-6952, 2013 | 205 | 2013 |
| Nanoionic resistive switching memories: On the physical nature of the dynamic reset process A Marchewka, B Roesgen, K Skaja, H Du, CL Jia, J Mayer, V Rana, ... Advanced Electronic Materials 2 (1), 1500233, 2016 | 201 | 2016 |
| Anomalous resistance hysteresis in oxide ReRAM: Oxygen evolution and reincorporation revealed by in situ TEM D Cooper, C Baeumer, N Bernier, A Marchewka, C La Torre, ... Advanced materials 29 (23), 1700212, 2017 | 198 | 2017 |
| Simulation of multilevel switching in electrochemical metallization memory cells S Menzel, U Böttger, R Waser Journal of applied physics 111 (1), 2012 | 187 | 2012 |
| Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ... ACS nano 15 (11), 17214-17231, 2021 | 160 | 2021 |
| Realization of boolean logic functionality using redox‐based memristive devices A Siemon, T Breuer, N Aslam, S Ferch, W Kim, J Van Den Hurk, V Rana, ... Advanced functional materials 25 (40), 6414-6423, 2015 | 150 | 2015 |
| A complementary resistive switch-based crossbar array adder A Siemon, S Menzel, R Waser, E Linn IEEE journal on emerging and selected topics in circuits and systems 5 (1 …, 2015 | 146 | 2015 |
| Impact of oxygen exchange reaction at the ohmic interface in Ta 2 O 5-based ReRAM devices W Kim, S Menzel, DJ Wouters, Y Guo, J Robertson, B Roesgen, R Waser, ... Nanoscale 8 (41), 17774-17781, 2016 | 143 | 2016 |
| Exploiting the switching dynamics of HfO2-based ReRAM devices for reliable analog memristive behavior F Cüppers, S Menzel, C Bengel, A Hardtdegen, M Von Witzleben, ... APL materials 7 (9), 2019 | 136 | 2019 |
| Applicability of well-established memristive models for simulations of resistive switching devices E Linn, A Siemon, R Waser, S Menzel IEEE Transactions on Circuits and Systems I: Regular Papers 61 (8), 2402-2410, 2014 | 132 | 2014 |
| Subfilamentary networks cause cycle-to-cycle variability in memristive devices C Baeumer, R Valenta, C Schmitz, A Locatelli, TO Mentes, SP Rogers, ... ACS nano 11 (7), 6921-6929, 2017 | 120 | 2017 |
| Improved Switching Stability and the Effect of an Internal Series Resistor in HfO2/TiOx Bilayer ReRAM Cells A Hardtdegen, C La Torre, F Cüppers, S Menzel, R Waser, ... IEEE transactions on electron devices 65 (8), 3229-3236, 2018 | 119 | 2018 |
| Variability-aware modeling of filamentary oxide-based bipolar resistive switching cells using SPICE level compact models C Bengel, A Siemon, F Cüppers, S Hoffmann-Eifert, A Hardtdegen, ... IEEE Transactions on Circuits and Systems I: Regular Papers 67 (12), 4618-4630, 2020 | 117 | 2020 |
| Multidimensional Simulation of Threshold Switching in NbO2 Based on an Electric Field Triggered Thermal Runaway Model C Funck, S Menzel, N Aslam, H Zhang, A Hardtdegen, R Waser, ... Advanced electronic materials 2 (7), 1600169, 2016 | 116 | 2016 |
