| Monolithic Integration of InSb Photodetector on Silicon for Mid-Infrared Silicon Photonics BW Jia, KH Tan, WK Loke, S Wicaksono, KH Lee, SF Yoon American Chemical Society, 2018 | 71 | 2018 |
| Field emission from patterned carbon nanotube emitters produced by microwave plasma chemical vapor deposition J Yu, Q Zhang, J Ahn, SF Yoon, YJ Li, B Gan, K Chew, KH Tan Diamond and related materials 10 (12), 2157-2160, 2001 | 49 | 2001 |
| Modeling and analysis of hydrogen–methane plasma in electron cyclotron resonance chemical vapor deposition of diamond-like carbon SF Yoon, KH Tan, Rusli, J Ahn Journal of applied physics 91 (1), 40-47, 2002 | 47 | 2002 |
| Molecular beam epitaxy grown GaNAsSb 1eV photovoltaic cell KH Tan, S Wicaksono, WK Loke, D Li, SF Yoon, EA Fitzgerald, SA Ringel, ... Journal of Crystal Growth 335 (1), 66-69, 2011 | 44 | 2011 |
| Concomitant incorporation of antimony and nitrogen in GaAsSbN lattice-matched to GaAs S Wicaksono, SF Yoon, KH Tan, WK Cheah Journal of crystal growth 274 (3-4), 355-361, 2005 | 42 | 2005 |
| Effect of microwave power on the electron energy in an electron cyclotron resonance plasma SF Yoon, KH Tan, Q Zhang, M Rusli, J Ahn, L Valeri Vacuum 61 (1), 29-35, 2001 | 34 | 2001 |
| Defect-induced trap-assisted tunneling current in GaInNAs grown on GaAs substrate WK Loke, SF Yoon, S Wicaksono, KH Tan, KL Lew Journal of Applied Physics 102 (5), 054501, 2007 | 33 | 2007 |
| Near-infrared photon upconversion devices based on GaNAsSb active layer lattice matched to GaAs Y Yang, WZ Shen, HC Liu, SR Laframboise, S Wicaksono, SF Yoon, ... Applied Physics Letters 94 (9), 093504, 2009 | 32 | 2009 |
| Effects of nitrogen incorporation in InSb1− xNx grown using radio frequency plasma-assisted molecular beam epitaxy HT Pham, SF Yoon, KH Tan, D Boning Applied Physics Letters 90 (9), 2007 | 32 | 2007 |
| Effect of microwave power on diamond-like carbon films deposited using electron cyclotron resonance chemical vapor deposition SF Yoon, KH Tan, J Rusli, QF Huang Diamond and related materials 9 (12), 2024-2030, 2000 | 32 | 2000 |
| Degradation of subcells and tunnel junctions during growth of GaInP/Ga (In) As/GaNAsSb/Ge 4‐junction solar cells I García, M Ochoa, I Lombardero, L Cifuentes, M Hinojosa, P Caño, ... Progress in Photovoltaics: Research and Applications 25 (11), 887-895, 2017 | 31 | 2017 |
| High-speed picosecond pulse response GaNAsSb p-i-n photodetectors grown by rf plasma-assisted nitrogen molecular beam epitaxy KH Tan, SF Yoon, WK Loke, S Wicaksono, KL Lew, A Stohr, O Ecin, ... Applied physics letters 90 (18), 183515-183515-3, 2007 | 31 | 2007 |
| Synthesis of carbon nanostructures by microwave plasma chemical vapor deposition and their characterization J Yu, Q Zhang, J Ahn, SF Yoon, RYJ Li, B Gan, K Chew, KH Tan Materials Science and Engineering: B 90 (1-2), 16-19, 2002 | 29 | 2002 |
| Effect of growth temperature on defect states of GaAsSbN intrinsic layer in photodiode for application S Wicaksono, SF Yoon, WK Loke, KH Tan, KL Lew, M Zegaoui, JP Vilcot, ... Journal of Applied Physics 102 (4), 044505, 2007 | 26 | 2007 |
| Formation of interfacial misfit dislocation in GaSb/GaAs heteroepitaxy via anion exchange process KH Tan, BW Jia, WK Loke, S Wicaksono, SF Yoon Journal of Crystal Growth 427, 80-86, 2015 | 25 | 2015 |
| Improvement of GaInNAs pin photodetector responsivity by antimony incorporation WK Loke, SF Yoon, KH Tan, S Wicaksono, WJ Fan Journal of applied physics 101 (3), 033122-033122-5, 2007 | 23 | 2007 |
| Characterization of small-mismatch GaAsSbN on GaAs grown by solid source molecular beam epitaxy S Wicaksono, SF Yoon, KH Tan, WK Loke Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2005 | 21 | 2005 |
| Modeling and analysis of the electron cyclotron resonance diamond-like carbon deposition process SF Yoon, KH Tan, Rusli, J Ahn Journal of applied physics 91 (3), 1634-1639, 2002 | 21 | 2002 |
| First monolithic integration of Ge P-FETs and InAs N-FETs on silicon substrate: Sub-120 nm III-V buffer, sub-5 nm ultra-thin body, common raised S/D, and gate stack modules S Yadav, KH Tan, KH Goh, S Subramanian, KL Low, N Chen, B Jia, ... 2015 IEEE International Electron Devices Meeting (IEDM), 2.3. 1-2.3. 4, 2015 | 20 | 2015 |
| High responsivity GaNAsSb pin photodetectors at 1.3 µm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy KH Tan, SF Yoon, WK Loke, S Wicaksono, TK Ng, KL Lew, A Stöhr, ... Optics express 16 (11), 7720-7725, 2008 | 20 | 2008 |
