受强制性开放获取政策约束的文章 - Dr.-Ing. Kamran Forghani了解详情
无法在其他位置公开访问的文章：4 篇
Impact of in-situ annealing on dilute-bismide materials and its application to photovoltaics
H Kim, K Forghani, Y Guan, K Kim, AW Wood, J Lee, SE Babcock, ...
Journal of Crystal Growth 452, 276-280, 2016
强制性开放获取政策： US National Science Foundation
Surface kinetics study of metal-organic vapor phase epitaxy of GaAs1− yBiy on offcut and mesa-patterned GaAs substrates
Y Guan, K Forghani, H Kim, SE Babcock, LJ Mawst, TF Kuech
Journal of Crystal Growth 464, 39-48, 2017
强制性开放获取政策： US National Science Foundation
MOVPE growth of AlInP–InGaP distributed Bragg reflectors
K Forghani, R Reddy, D Rowell, R Tatavarti
IEEE Journal of Photovoltaics 10 (3), 754-757, 2020
强制性开放获取政策： US Department of Defense
Radiation-Induced Degradation Mechanisms in Thin-Film Multiple-Quantum-Well Solar Cells With Wavelength-Selective Photonic Structures
SR Tatavarti, K Forghani, A Wibowo, RE Welser
IEEE Journal of Photovoltaics 12 (5), 1192-1197, 2022
强制性开放获取政策： US Department of Defense
可在其他位置公开访问的文章：12 篇
Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching
C Youtsey, R McCarthy, R Reddy, K Forghani, A Xie, E Beam, J Wang, ...
physica status solidi (b) 254 (8), 1600774, 2017
强制性开放获取政策： US Department of Energy
Recent progress in epitaxial lift-off solar cells
AP Kirk, DW Cardwell, JD Wood, A Wibowo, K Forghani, D Rowell, N Pan, ...
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC)(A …, 2018
强制性开放获取政策： US Department of Defense
Simulation supported analysis of the effect of SiNx interlayers in AlGaN on the dislocation density reduction
O Klein, J Biskupek, U Kaiser, K Forghani, SB Thapa, F Scholz
Journal of Physics: Conference Series 209 (1), 012018, 2010
强制性开放获取政策： German Research Foundation
Annealing-induced precipitate formation behavior in MOVPE-grown GaAs1− xBix explored by atom probe tomography and HAADF-STEM
AW Wood, W Chen, H Kim, Y Guan, K Forghani, A Anand, TF Kuech, ...
Nanotechnology 28 (21), 215704, 2017
强制性开放获取政策： US National Science Foundation
Laser diodes employing GaAs1− xBix/GaAs1− yPy quantum well active regions
H Kim, Y Guan, K Forghani, TF Kuech, LJ Mawst
Semiconductor Science and Technology 32 (7), 075007, 2017
强制性开放获取政策： US National Science Foundation
Analysis of diamond surface channel field-effect transistors with AlN passivation layers
C Pietzka, J Scharpf, M Fikry, D Heinz, K Forghani, T Meisch, T Diemant, ...
Journal of Applied Physics 114 (11), 2013
强制性开放获取政策： German Research Foundation
Atom probe tomography evidence for uniform incorporation of Bi across the growth front in GaAs1− xBix/GaAs superlattice
W Chen, PA Ronsheim, AW Wood, K Forghani, Y Guan, TF Kuech, ...
Journal of Crystal Growth 446, 27-32, 2016
强制性开放获取政策： US National Science Foundation
First-principles predictions of electronic properties of GaAs1-x-yPyBix and GaAs1-x-yPyBix-based heterojunctions
G Luo, K Forghani, TF Kuech, D Morgan
Applied Physics Letters 109 (11), 2016
强制性开放获取政策： US National Science Foundation
Enhanced Incorporation of P into Tensile-Strained GaAs1-yPy Layers Grown by Metal-Organic Vapor Phase Epitaxy at Very Low Temperatures
Y Guan, K Forghani, KL Schulte, S Babcock, L Mawst, TF Kuech
ECS Journal of Solid State Science and Technology 5 (3), P183, 2016
强制性开放获取政策： US National Science Foundation
Movpe growth of alinp-ingap distributed bragg reflectors (dbr) for monolithic integration into multijunction solar cells
K Forghani, R Reddy, D Rowell, R Tatavarti
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), 0227-0229, 2019
强制性开放获取政策： US Department of Defense
Quantitative order‐parameter measurement in lattice‐mismatched AlInP using precession electron diffraction
X Pasala, N Pokharel, P Ahrenkiel, K Alberi, K Forghani, C Stender
Journal of Microscopy 284 (2), 132-141, 2021
强制性开放获取政策： US Department of Energy
Carrier dynamics in QW and bulk bismide and epitaxial lift off GaAs-In (Al) GaP double heterostructures grown by MOVPE for multi-junction solar cells
Y Sin, M Peterson, Z Lingley, S LaLumondiere, SC Moss, H Kim, ...
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V 9743 …, 2016
强制性开放获取政策： US National Science Foundation
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