受强制性开放获取政策约束的文章 - Ishwara Bhat了解详情
无法在其他位置公开访问的文章：10 篇
4H-SiC n-Channel Insulated Gate Bipolar Transistors on (0001) and (000-1) Oriented Free-Standing n−Substrates
S Chowdhury, C Hitchcock, Z Stum, R Dahal, IB Bhat, TP Chow
IEEE Electron Device Letters 37 (3), 317-320, 2016
强制性开放获取政策： US National Science Foundation, US Department of Energy
Fabrication of thick free-standing lightly-doped n-type 4H-SiC wafers
RP Dahal, S Chowdhury, CW Hitchcock, TP Chow, I Bhat
Materials Science Forum 897, 379-382, 2017
强制性开放获取政策： US Department of Energy, US Department of Defense
Experimental demonstration of high-voltage 4H-SiC Bi-directional IGBTs
S Chowdhury, C Hitchcock, Z Stum, RP Dahal, IB Bhat, TP Chow
IEEE Electron Device Letters 37 (8), 1033-1036, 2016
强制性开放获取政策： US Department of Energy
Modular approach for metal–semiconductor heterostructures with very large interface lattice misfit: A first-principles perspective
W Xie, M Lucking, L Chen, I Bhat, GC Wang, TM Lu, S Zhang
Crystal Growth & Design 16 (4), 2328-2334, 2016
强制性开放获取政策： US National Science Foundation, US Department of Energy
Monocrystalline ZnTe/CdTe/MgCdTe double heterostructure solar cells grown on InSb substrates
YS Kuo, J Becker, S Liu, Y Zhao, XH Zhao, PY Su, I Bhat, YH Zhang
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 1-6, 2015
强制性开放获取政策： US Department of Energy
High voltage 4H-SiC bi-directional IGBTs
S Chowdhury, C Hitchcock, R Dahal, IB Bhat, TP Chow
2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016
强制性开放获取政策： US National Science Foundation, US Department of Energy
4H-SiC n-channel DMOS IGBTs on (0001) and (000-1) oriented lightly doped free-standing substrates
S Chowdhury, CW Hitchcock, RP Dahal, I Bhat, TP Chow
Materials Science Forum 858, 954-957, 2016
强制性开放获取政策： US National Science Foundation, US Department of Energy
Low Temperature Metalorganic Chemical Vapor Deposition of Semiconductor Thin Films for Surface Passivation of Photovoltaic Devices
S Banerjee, R Dahal, I Bhat
MRS Advances 1 (50), 3379-3390, 2016
强制性开放获取政策： US National Science Foundation, US Department of Energy
2D reciprocal space map of etched metalorganic chemical vapor deposited CdTe (001) film surface on miscut GaAs (001)
X Chen, Z Lu, X Wen, Y Xiang, I Bhat, M Washington, TM Lu, GC Wang
Thin Solid Films 772, 139807, 2023
强制性开放获取政策： 国家自然科学基金委员会
Heteroepitaxy of Ge on Cube-Textured Ni (001) Foils Through CaF2 Buffer Layer
L Chen, ZH Lu, TM Lu, I Bhat, SB Zhang, A Goyal, LH Zhang, K Kisslinger, ...
MRS Advances 1 (43), 2947-2952, 2016
强制性开放获取政策： US National Science Foundation, US Department of Energy
可在其他位置公开访问的文章：15 篇
Scalable large-area solid-state neutron detector with continuous p–n junction and extremely low leakage current
KC Huang, R Dahal, JJQ Lu, A Weltz, Y Danon, IB Bhat
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2014
强制性开放获取政策： US Department of Energy
Epitaxial CdTe thin films on mica by vapor transport deposition for flexible solar cells
X Wen, Z Lu, X Sun, Y Xiang, Z Chen, J Shi, I Bhat, GC Wang, ...
ACS Applied Energy Materials 3 (5), 4589-4599, 2020
强制性开放获取政策： US National Science Foundation
van der Waals epitaxy of CdTe thin film on graphene
D Mohanty, W Xie, Y Wang, Z Lu, J Shi, S Zhang, GC Wang, TM Lu, ...
Applied Physics Letters 109 (14), 2016
强制性开放获取政策： US National Science Foundation, US Department of Energy
Operating principles, design considerations, and experimental characteristics of high-voltage 4H-SiC bidirectional IGBTs
S Chowdhury, CW Hitchcock, Z Stum, RP Dahal, IB Bhat, TP Chow
IEEE Transactions on Electron Devices 64 (3), 888-896, 2016
强制性开放获取政策： US Department of Energy
Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate
YB Yang, L Seewald, D Mohanty, Y Wang, LH Zhang, K Kisslinger, W Xie, ...
Applied Surface Science 413, 219-232, 2017
强制性开放获取政策： US National Science Foundation, US Department of Energy
Metalorganic vapor phase epitaxy of large size CdTe grains on mica through chemical and van der Waals interactions
D Mohanty, Z Lu, X Sun, Y Xiang, Y Wang, D Ghoshal, J Shi, L Gao, S Shi, ...
Physical Review Materials 2 (11), 113402, 2018
强制性开放获取政策： US National Science Foundation, 国家自然科学基金委员会
Effect of CdCl2 heat treatment on ZnTe back electron reflector layer in thin film CdTe solar cells
D Mohanty, PY Su, GC Wang, TM Lu, IB Bhat
Solar Energy 135, 209-214, 2016
强制性开放获取政策： US National Science Foundation, US Department of Energy
Single-crystal CdTe homojunction structures for solar cell applications
PY Su, R Dahal, GC Wang, S Zhang, TM Lu, IB Bhat
Journal of Electronic Materials 44, 3118-3123, 2015
强制性开放获取政策： US Department of Energy
Growth of epitaxial CdTe thin films on amorphous substrates using single crystal graphene buffer
D Mohanty, Z Lu, X Sun, Y Xiang, L Gao, J Shi, L Zhang, K Kisslinger, ...
Carbon 144, 519-524, 2019
强制性开放获取政策： US National Science Foundation, US Department of Energy, 国家自然科学基金委员会
van der Waals epitaxy of SnS film on single crystal graphene buffer layer on amorphous SiO2/Si
Y Xiang, Y Yang, F Guo, X Sun, Z Lu, D Mohanty, I Bhat, M Washington, ...
Applied Surface Science 435, 759-768, 2018
强制性开放获取政策： US National Science Foundation
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