Enhancement Mode β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FET (HFET) With High Transconductance and Cutoff Frequency A Vaidya, CN Saha, U Singisetti IEEE Electron Device Letters 42 (10), 1444-1447, 2021 | 53 | 2021 |
Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX CN Saha, A Vaidya, AFM Bhuiyan, L Meng, S Sharma, H Zhao, ... Applied Physics Letters 122 (18), 2023 | 33 | 2023 |
Temperature dependent pulsed IV and RF characterization of β-(AlxGa1− x) 2O3/Ga2O3 hetero-structure FET with ex situ passivation CN Saha, A Vaidya, U Singisetti Applied Physics Letters 120 (17), 2022 | 19 | 2022 |
Analytical modeling and performance analysis for symmetric double gate stack-oxide junctionless field effect transistor in subthreshold region R Fabiha, CN Saha, MS Islam 2017 IEEE Region 10 Humanitarian Technology Conference (R10-HTC), 310-313, 2017 | 6 | 2017 |
Effect of dielectric constant and oxide thickness on the performance analysis of symmetric double gate stack-oxide junctionless field effect transistor in subthreshold region CN Saha, R Fabiha, MS Islam 2017 International Conference on Electrical, Computer and Communication …, 2017 | 6 | 2017 |
Electrical characteristics of in situ Mg-doped β-Ga2O3 current-blocking layer for vertical devices S Saha, L Meng, AFM Bhuiyan, A Sharma, CN Saha, H Zhao, U Singisetti Applied Physics Letters 123 (13), 2023 | 4 | 2023 |
Self-heating in ultra-wide bandgap n-type SrSnO3 thin films P Golani, CN Saha, PP Sundaram, F Liu, TK Truttmann, VR Chaganti, ... Applied Physics Letters 121 (16), 2022 | 4 | 2022 |
Thin channel Ga2O3 MOSFET with 55 GHz fMAX and> 100 V breakdown CN Saha, A Vaidya, NJ Nipu, L Meng, DS Yu, H Zhao, U Singisetti Applied Physics Letters 125 (6), 2024 | | 2024 |
Sub-100 nm {\beta}-Ga2O3 MOSFET with 55 GHz fMAX and> 100 V breakdown CN Saha, A Vaidya, AFM Bhuiyan, L Meng, H Zhao, U Singisetti arXiv preprint arXiv:2305.04725, 2023 | | 2023 |
Fabrication and Characterization of Highly Scaled β-Ga2O3 FETs for RF Applications CN Saha State University of New York at Buffalo, 2023 | | 2023 |
Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field CN Saha, A Vaidya, AFM Bhuiyan, L Meng, H Zhao, U Singisetti arXiv preprint arXiv:2211.01088, 2022 | | 2022 |
Si3N4 Ex-situ Passivation Study and Temperature-Dependent RF Performance Analysis of β-(Al0.19Ga0.81)2O3/Ga2O3 HFET CN Saha, A Vaidya, U Singisetti Compound Semiconductor Week (48th ISCS and 33rd IPRM), University of …, 2022 | | 2022 |
Self-heating in ultra-wide bandgap n-type SrSnO P Golani, CN Saha, PP Sundaram | | 2022 |
β-(Al0.19Ga0.81)2O3/Ga2O3 enhancement mode HFETs with high ft-Lg product CN Saha, A Vaidya, U Singisetti 26th Lester Eastman Conference, University of Notre Dame, Indiana, USA …, 2021 | | 2021 |
Magnetic proximity effects in graphene/chromia heterostructures A Mahmood, W Echtenkamp, CP Kwan, M Randle, C Saha, P Dowben, ... JSAP Annual Meetings Extended Abstracts The 81st JSAP Autumn Meeting 2020 …, 2020 | | 2020 |
Fabrication of Micron Scale Test Structures for Magneto-electric Chromia (Cr2O3) Thin Films CN Saha State University of New York at Buffalo, 2020 | | 2020 |