受强制性开放获取政策约束的文章 - Ramya Yeluri了解详情
可在其他位置公开访问的文章：3 篇
On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors
D Bisi, SH Chan, X Liu, R Yeluri, S Keller, M Meneghini, G Meneghesso, ...
Applied Physics Letters 108 (11), 2016
强制性开放获取政策： US Department of Energy
Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition
X Liu, CM Jackson, F Wu, B Mazumder, R Yeluri, J Kim, S Keller, ...
Journal of Applied Physics 119 (1), 2016
强制性开放获取政策： US National Science Foundation
Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN
SH Chan, D Bisi, X Liu, R Yeluri, M Tahhan, S Keller, SP DenBaars, ...
Journal of Applied Physics 122 (17), 2017
强制性开放获取政策： US National Science Foundation, US Department of Energy, US Department of …
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