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Andrea Tallarico
Andrea Tallarico
在 uniba.it 的电子邮件经过验证
标题
引用次数
引用次数
年份
Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs
AN Tallarico, S Stoffels, P Magnone, N Posthuma, E Sangiorgi, ...
IEEE Electron Device Letters 38 (1), 99-102, 2016
1572016
Magnetic anisotropy produced by magma flow: theoretical model and experimental data from Ferrar dolerite sills (Antarctica)
M Dragoni, R Lanza, A Tallarico
Geophysical Journal International 128 (1), 230-240, 1997
1051997
PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on and Underlying Degradation Mechanisms
AN Tallarico, S Stoffels, N Posthuma, P Magnone, D Marcon, S Decoutere, ...
IEEE Transactions on Electron Devices 65 (1), 38-44, 2017
902017
The effect of crystallization on the rheology and dynamics of lava flows
M Dragoni, A Tallarico
Journal of Volcanology and Geothermal Research 59 (3), 241-252, 1994
881994
A model for the formation of lava tubes by roofing over a channel
M Dragoni, A Piombo, A Tallarico
Journal of Geophysical Research: Solid Earth 100 (B5), 8435-8447, 1995
741995
Viscous Newtonian laminar flow in a rectangular channel: application to Etna lava flows
A Tallarico, M Dragoni
Bulletin of Volcanology 61, 40-47, 1999
691999
Failure mode for p-GaN gates under forward gate stress with varying Mg concentration
S Stoffels, B Bakeroot, TL Wu, D Marcon, NE Posthuma, S Decoutere, ...
2017 IEEE International Reliability Physics Symposium (IRPS), 4B-4.1-4B-4.9, 2017
622017
Threshold voltage instability in GaN HEMTs with p-type gate: Mg doping compensation
AN Tallarico, S Stoffels, N Posthuma, S Decoutere, E Sangiorgi, C Fiegna
IEEE Electron Device Letters 40 (4), 518-521, 2019
562019
Gate reliability of p-GaN HEMT with gate metal retraction
AN Tallarico, S Stoffels, N Posthuma, B Bakeroot, S Decoutere, ...
IEEE Transactions on Electron Devices 66 (11), 4829-4835, 2019
492019
Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination
J Hu, S Stoffels, S Lenci, B De Jaeger, N Ronchi, AN Tallarico, ...
IEEE Transactions on Electron Devices 63 (9), 3451-3458, 2016
452016
Longitudinal deformation of a lava flow: the influence of Bingham rheology
M Dragoni, S Pondrelli, A Tallarico
Journal of volcanology and geothermal research 52 (4), 247-254, 1992
401992
Perimeter driven transport in the p-GaN gate as a limiting factor for gate reliability
S Stoffels, N Posthuma, S Decoutere, B Bakeroot, AN Tallarico, ...
2019 IEEE International Reliability Physics Symposium (IRPS), 1-10, 2019
392019
Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests
J Hu, S Stoffels, M Zhao, AN Tallarico, I Rossetto, M Meneghini, X Kang, ...
IEEE Electron Device Letters 38 (3), 371-374, 2017
382017
A model for the shape of lava flow fronts
M Dragoni, I Borsari, A Tallarico
Journal of Geophysical Research: Solid Earth 110 (B9), 2005
372005
A three‐dimensional Bingham model for channeled lava flows
A Tallarico, M Dragoni
Journal of Geophysical Research: Solid Earth 105 (B11), 25969-25980, 2000
36*2000
Hot-carrier degradation in power LDMOS: Selective LOCOS-versus STI-based architecture
AN Tallarico, S Reggiani, R Depetro, AM Torti, G Croce, E Sangiorgi, ...
IEEE Journal of the Electron Devices Society 6, 219-226, 2018
332018
Modeling long‐term ground deformation due to the cooling of a magma chamber: Case of Basiluzzo island, Aeolian Islands, Italy
A Tallarico, M Dragoni, M Anzidei, A Esposito
Journal of Geophysical Research: Solid Earth 108 (B12), 2003
322003
Field-and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level
I Rossetto, M Meneghini, E Canato, M Barbato, S Stoffels, N Posthuma, ...
Microelectronics Reliability 76, 298-303, 2017
312017
Assumptions in the evaluation of lava effusion rates from heat radiation
M Dragoni, A Tallarico
Geophysical Research Letters 36 (8), 2009
312009
Mechanisms of formation of lava tubes
A Valerio, A Tallarico, M Dragoni
Journal of Geophysical Research: Solid Earth 113 (B8), 2008
312008
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