| High-average-power (>20-W) Nd:YVO4 lasers mode locked by strain-compensated saturable Bragg reflectors D Burns, M Hetterich, AI Ferguson, E Bente, MD Dawson, JI Davies, ... JOSA B 17 (6), 919-926, 2000 | 93 | 2000 |
| HOT CARRIER ENERGY LOSS RATES IN GalnAs/InP QUANTUM WELLS DJ Westland, JF Ryan, MD Scott, JI Davies, JR Riffat Hot Carriers in Semiconductors, 431-434, 1988 | 59 | 1988 |
| High mobility InP epitaxial layers prepared by atmospheric pressure MOVPE using trimethylindium dissociated from an adduct with 1, 2-bis (diphenyl phosphino) ethane AH Moore, MD Scott, JI Davies, DC Bradley, MM Faktor, H Chudzynska Journal of Crystal Growth 77 (1-3), 19-22, 1986 | 48 | 1986 |
| Nonlinear excitonic optical absorption in GaInAs/InP quantum wells AM Fox, AC Maciel, MG Shorthose, JF Ryan, MD Scott, JI Davies, ... Applied physics letters 51 (1), 30-32, 1987 | 46 | 1987 |
| CODE: a novel MOVPE technique for the single stage growth of buried ridge double heterostructure lasers and waveguides MD Scott, JR Riffat, I Griffith, JI Davies, AC Marshall Journal of Crystal Growth 93 (1-4), 820-824, 1988 | 43 | 1988 |
| Improvements in the structural quality of Al0. 48In0. 52As grown by low pressure metal-organic vapour-phase epitaxy JI Davies, PD Hodson, AC Marshall, MD Scott, RJM Griffiths Semiconductor science and technology 3 (3), 223, 1988 | 28 | 1988 |
| Optical studies of excitons in Ga0.47In0.53As/InP multiple quantum wells DJ Westland, AM Fox, AC Maciel, JF Ryan, MD Scott, JI Davies, JR Riffat Applied physics letters 50 (13), 839-841, 1987 | 27 | 1987 |
| Synthesis of the hexaphenoxotungstate (V) ion; The x-ray crystal structures of the tetraethylammonium and lithium salts JI Davies, JF Gibson, AC Skapski, G Wilkinson, W Wai-Kwok Polyhedron 1 (7-8), 641-646, 1982 | 27 | 1982 |
| Structural and optical properties of GaAlInAs lattice matched to InP grown by low‐pressure metalorganic vapor phase epitaxy JI Davies, AC Marshall, MD Scott, RJM Griffiths Applied physics letters 53 (4), 276-278, 1988 | 26 | 1988 |
| Quantum confined Stark effect in InGaAs/InP single quantum wells investigated by photocurrent spectroscopy AJ Moseley, DJ Robbins, AC Marshall, MQ Kearley, JI Davies Semiconductor science and technology 4 (3), 184, 1989 | 24 | 1989 |
| Electric field dependent exciton energy and photoluminescence quenching in GaInAs/InP quantum wells MG Shorthose, AC Maciel, JF Ryan, MD Scott, A Moseley, JI Davies, ... Applied physics letters 51 (7), 493-495, 1987 | 22 | 1987 |
| Characteristics of Schottky diodes on AlxIn1-xAs grown by MOCVD PD Hodson, RH Wallis, JI Davies, JR Riffat, AC Marshall Semiconductor science and technology 3 (11), 1136, 1988 | 21 | 1988 |
| Effect of barrier width on performance of long wavelength GaInAs/InP multi-quantum-well lasers PJ Williams, DJ Robbins, R Cush, MD Scott, JI Davies Electronics Letters 24, 859, 1988 | 21 | 1988 |
| Tertiary phosphine adducts of manganese (II) dialkyls: synthesis and X-ray crystal structure of bis (trimethylphosphine) bis (trimethylsilylmethyl) bis (µ-trimethylsilylmethyl … JI Davies, CG Howard, AC Skapski, G Wilkinson Journal of the Chemical Society, Chemical Communications, 1077-1078, 1982 | 21 | 1982 |
| In-situ monitoring of chemical reactions in MOCVD growth of ZnSe JI Davies, MJ Parrott, JO Williams Journal of Crystal Growth 79 (1-3), 363-370, 1986 | 20 | 1986 |
| Advances towards 4J lattice-matched including dilute nitride subcell for terrestrial and space applications M Ochoa, I García, I Lombardero, L Ayllón, L Cifuentes, I Rey-Stolle, ... 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 0052-0057, 2016 | 19 | 2016 |
| Ga Al In As ternary and quaternary alloys lattice matched to InP for electronic, optoelectronic and optical device applications, by LP-MOVPE JI Davies, AC Marshall, MD Scott, RJM Griffiths Journal of Crystal Growth 93 (1-4), 782-791, 1988 | 19 | 1988 |
| Design and characterization of hybrid III–V concentrator photovoltaic–thermoelectric receivers under primary and secondary optical elements TKN Sweet, MH Rolley, W Li, MC Paul, A Johnson, JI Davies, R Tuley, ... Applied energy 226, 772-783, 2018 | 18 | 2018 |
| Exciton electroabsorption at room temperature in InGaAs/InP multiquantum-well structures grown by atmospheric-pressure MOCVD AJ Moseley, MD Scott, PJ Williams, RH Wallis, JI Davies, JR Riffat Electronics Letters 10 (23), 516-518, 1987 | 16 | 1987 |
| Properties of solution TMI as an OMVPE source MS Ravetz, LM Smith, SA Rushworth, AB Leese, R Kanjolia, JI Davies, ... Journal of Electronic Materials 29, 156-160, 2000 | 15 | 2000 |
