受强制性开放获取政策约束的文章 - Tathagata Srimani了解详情
无法在其他位置公开访问的文章：8 篇
Fabrication of carbon nanotube field-effect transistors in commercial silicon manufacturing facilities
MD Bishop, G Hills, T Srimani, C Lau, D Murphy, S Fuller, J Humes, ...
Nature Electronics 3 (8), 492-501, 2020
强制性开放获取政策： US Department of Defense
Tunable n-Type Doping of Carbon Nanotubes through Engineered Atomic Layer Deposition HfOX Films
C Lau, T Srimani, MD Bishop, G Hills, MM Shulaker
ACS nano 12 (11), 10924-10931, 2018
强制性开放获取政策： US National Science Foundation, US Department of Defense
Heterogeneous Integration of BEOL Logic and Memory in a Commercial Foundry: Multi-Tier Complementary Carbon Nanotube Logic and Resistive RAM at a 130 nm node
T Srimani, G Hills, M Bishop, C Lau, P Kanhaiya, R Ho, A Amer, M Chao, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
强制性开放获取政策： US Department of Defense
Foundry Monolithic 3D BEOL Transistor+ Memory Stack: Iso-performance and Iso-footprint BEOL Carbon Nanotube FET+ RRAM vs. FEOL Silicon FET+ RRAM
T Srimani, AC Yu, RM Radway, DT Rich, M Nelson, S Wong, D Murphy, ...
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023
强制性开放获取政策： US National Science Foundation, US Department of Energy, US Department of …
N3XT 3D Technology Foundations and Their Lab-to-Fab: Omni 3D Logic, Logic+ Memory Ultra-Dense 3D, 3D Thermal Scaffolding
T Srimani, A Bechdolt, S Choi, C Gilardi, A Kasperovich, S Li, Q Lin, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
强制性开放获取政策： US National Science Foundation, US Department of Defense
Lift-off-Free Complementary Carbon Nanotube FETs Fabricated With Conventional Processing in a Silicon Foundry
T Srimani, AC Yu, B Benton, M Nelson, MM Shulaker
2022 International Symposium on VLSI Technology, Systems and Applications …, 2022
强制性开放获取政策： US Department of Defense
Barrier Booster for Remote Extension Doping and its DTCO for 1D & 2D FETs
C Gilardi, G Zeevi, S Choi, SK Su, TYT Hung, S Li, N Safron, Q Lin, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
强制性开放获取政策： US Department of Energy, US Department of Defense
Manufacturing Methodology for Carbon Nanotube Electronics
C Lau, G Hills, MD Bishop, T Srimani, R Ho, P Kanhaiya, A Yu, A Amer, ...
2020 International Symposium on VLSI Technology, Systems and Applications …, 2020
强制性开放获取政策： US Department of Defense
可在其他位置公开访问的文章：9 篇
Modern microprocessor built from complementary carbon nanotube transistors
G Hills, C Lau, A Wright, S Fuller, MD Bishop, T Srimani, P Kanhaiya, ...
Nature 572 (7771), 595-602, 2019
强制性开放获取政策： US National Science Foundation, US Department of Defense
Negative capacitance carbon nanotube FETs
T Srimani, G Hills, MD Bishop, U Radhakrishna, A Zubair, RS Park, ...
IEEE Electron Device Letters 39 (2), 304-307, 2017
强制性开放获取政策： US National Science Foundation, US Department of Defense
30-nm contacted gate pitch back-gate carbon nanotube FETs for Sub-3-nm nodes
T Srimani, G Hills, MD Bishop, MM Shulaker
IEEE Transactions on Nanotechnology 18, 132-138, 2018
强制性开放获取政策： US National Science Foundation, US Department of Defense
Asymmetric gating for reducing leakage current in carbon nanotube field-effect transistors
T Srimani, G Hills, X Zhao, D Antoniadis, JA Del Alamo, MM Shulaker
Applied Physics Letters 115 (6), 2019
强制性开放获取政策： US National Science Foundation, US Department of Defense
Monolithic three-dimensional imaging system: Carbon nanotube computing circuitry integrated directly over silicon imager
T Srimani, G Hills, C Lau, M Shulaker
2019 Symposium on VLSI Technology, T24-T25, 2019
强制性开放获取政策： US National Science Foundation, US Department of Defense
Comprehensive Study on High Purity Semiconducting Carbon Nanotube Extraction
T Srimani, J Ding, A Yu, P Kanhaiya, C Lau, R Ho, J Humes, CT Kingston, ...
Advanced Electronic Materials 8 (9), 2101377, 2022
强制性开放获取政策： US National Science Foundation, US Department of Defense
Foundry Integration of Carbon Nanotube FETs With 320 nm Contacted Gate Pitch Using New Lift-Off-Free Process
CY Andrew, T Srimani, C Lau, B Benton, M Nelson, MM Shulaker
IEEE Electron Device Letters 43 (3), 486-489, 2022
强制性开放获取政策： US Department of Defense
Ultra-Dense 3D Physical Design Unlocks New Architectural Design Points with Large Benefits
T Srimani, RM Radway, J Kim, K Prabhu, D Rich, C Gilardi, P Raina, ...
2023 Design, Automation & Test in Europe Conference & Exhibition (DATE), 1-6, 2023
强制性开放获取政策： US Department of Energy, US Department of Defense
Advances in Carbon Nanotube Technologies: From Transistors to a RISC-V Microprocessor
G Hills, C Lau, T Srimani, MD Bishop, P Kanhaiya, R Ho, A Amer, ...
Proceedings of the 2020 International Symposium on Physical Design, 33-38, 2020
强制性开放获取政策： US Department of Defense
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