| InP HEMTs for sub-mW cryogenic low-noise amplifiers E Cha, N Wadefalk, G Moschetti, A Pourkabirian, J Stenarson, J Grahn IEEE Electron Device Letters 41 (7), 1005-1008, 2020 | 67 | 2020 |
| 0.3–14 and 16–28 GHz wide-bandwidth cryogenic MMIC low-noise amplifiers E Cha, N Wadefalk, PÅ Nilsson, J Schleeh, G Moschetti, A Pourkabirian, ... IEEE Transactions on Microwave Theory and Techniques 66 (11), 4860-4869, 2018 | 62 | 2018 |
| A 183 GHz metamorphic HEMT low-noise amplifier with 3.5 dB noise figure G Moschetti, A Leuther, H Maßler, B Aja, M Rösch, M Schlechtweg, ... IEEE Microwave and Wireless Components Letters 25 (9), 618-620, 2015 | 47 | 2015 |
| A 300-µW cryogenic HEMT LNA for quantum computing E Cha, N Wadefalk, G Moschetti, A Pourkabirian, J Stenarson, J Grahn 2020 IEEE/MTT-S International Microwave Symposium (IMS), 1299-1302, 2020 | 46 | 2020 |
| Two-finger InP HEMT design for stable cryogenic operation of ultra-low-noise Ka-and Q-band LNAs E Cha, G Moschetti, N Wadefalk, PÅ Nilsson, S Bevilacqua, ... IEEE Transactions on Microwave Theory and Techniques 65 (12), 5171-5180, 2017 | 34 | 2017 |
| Cryogenic InAs/AlSb HEMT wideband low-noise IF amplifier for ultra-low-power applications G Moschetti, N Wadefalk, PÅ Nilsson, M Abbasi, L Desplanque, X Wallart, ... IEEE microwave and wireless components letters 22 (3), 144-146, 2012 | 33 | 2012 |
| Anisotropic transport properties in InAs/AlSb heterostructures G Moschetti, H Zhao, PÅ Nilsson, S Wang, A Kalabukhov, G Dambrine, ... Applied Physics Letters 97 (24), 2010 | 25 | 2010 |
| Sb-HEMT: toward 100-mV cryogenic electronics A Noudeviwa, Y Roelens, F Danneville, A Olivier, N Wichmann, ... IEEE transactions on electron devices 57 (8), 1903-1909, 2010 | 23 | 2010 |
| Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors BG Vasallo, H Rodilla, T González, G Moschetti, J Grahn, J Mateos Journal of Applied Physics 108 (9), 2010 | 22 | 2010 |
| Stability investigation of large gate-width metamorphic high electron-mobility transistors at cryogenic temperature G Moschetti, F Thome, M Ohlrogge, J Goliasch, F Schäfer, B Aja, ... IEEE Transactions on Microwave Theory and Techniques 64 (10), 3139-3150, 2016 | 21 | 2016 |
| InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation G Moschetti, N Wadefalk, PÅ Nilsson, Y Roelens, A Noudeviwa, ... Solid-state electronics 64 (1), 47-53, 2011 | 20 | 2011 |
| AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs L Desplanque, S El Kazzi, JL Codron, Y Wang, P Ruterana, G Moschetti, ... Applied Physics Letters 100 (26), 2012 | 19 | 2012 |
| Cryogenic W-band LNA for ALMA band 2+ 3 with average noise temperature of 24 K Y Tang, N Wadefalk, JW Kooi, J Schleeh, G Moschetti, PÅ Nilsson, ... 2017 IEEE MTT-S International Microwave Symposium (IMS), 176-179, 2017 | 17 | 2017 |
| Planar InAs/AlSb HEMTs with ion-implanted isolation G Moschetti, PÅ Nilsson, A Hallen, L Desplanque, X Wallart, J Grahn IEEE electron device letters 33 (4), 510-512, 2012 | 17 | 2012 |
| Cryogenic LNAs for SKA band 2 to 5 J Schleeh, G Moschetti, N Wadefalk, E Cha, A Pourkabirian, G Alestig, ... 2017 IEEE MTT-S International Microwave Symposium (IMS), 164-167, 2017 | 15 | 2017 |
| Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs H Rodilla, T González, G Moschetti, J Grahn, J Mateos Semiconductor Science and Technology 26 (2), 025004, 2010 | 12 | 2010 |
| On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field IH Rodrigues, D Niepce, A Pourkabirian, G Moschetti, J Schleeh, T Bauch, ... AIP Advances 9 (8), 2019 | 11 | 2019 |
| Kink effect and noise performance in isolated-gate InAs/AlSb high electron mobility transistors BG Vasallo, H Rodilla, T González, G Moschetti, J Grahn, J Mateos Semiconductor Science and Technology 27 (6), 065018, 2012 | 11 | 2012 |
| Optimization of channel structures in InP HEMT technology for cryogenic low-noise and low-power operation E Cha, N Wadefalk, G Moschetti, A Pourkabirian, J Stenarson, J Li, ... IEEE Transactions on Electron Devices 70 (5), 2431-2436, 2023 | 9 | 2023 |
| Low noise amplifiers for MetOp-SG M Rösch, A Tessmann, A Leuther, R Weber, G Moschetti, B Aja, ... 2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on …, 2016 | 9 | 2016 |
