受强制性开放获取政策约束的文章 - Giuseppe Moschetti了解详情
无法在其他位置公开访问的文章：8 篇
Cryogenic InAs/AlSb HEMT wideband low-noise IF amplifier for ultra-low-power applications
G Moschetti, N Wadefalk, PÅ Nilsson, M Abbasi, L Desplanque, X Wallart, ...
IEEE microwave and wireless components letters 22 (3), 144-146, 2012
强制性开放获取政策： Swedish Research Council
Stability investigation of large gate-width metamorphic high electron-mobility transistors at cryogenic temperature
G Moschetti, F Thome, M Ohlrogge, J Goliasch, F Schäfer, B Aja, ...
IEEE Transactions on Microwave Theory and Techniques 64 (10), 3139-3150, 2016
强制性开放获取政策： Fraunhofer-Gesellschaft
InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation
G Moschetti, N Wadefalk, PÅ Nilsson, Y Roelens, A Noudeviwa, ...
Solid-state electronics 64 (1), 47-53, 2011
强制性开放获取政策： Swedish Research Council
Planar InAs/AlSb HEMTs with ion-implanted isolation
G Moschetti, PÅ Nilsson, A Hallen, L Desplanque, X Wallart, J Grahn
IEEE electron device letters 33 (4), 510-512, 2012
强制性开放获取政策： Swedish Research Council
Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al (Ga) Sb oxidation
E Lefebvre, G Moschetti, M Malmkvist, L Desplanque, X Wallart, J Grahn
Semiconductor Science and Technology 29 (3), 035010, 2014
强制性开放获取政策： Swedish Research Council
DC and RF cryogenic behaviour of InAs/AlSb HEMTs
G Moschetti, PÅ Nilsson, L Desplanque, X Wallart, H Rodilla, J Mateos, ...
2010 22nd International Conference on Indium Phosphide and Related Materials …, 2010
强制性开放获取政策： Swedish Research Council
Isolated-gate InAs/AlSb HEMTs: A Monte Carlo study
H Rodilla, T González, M Malmkvist, E Lefebvre, G Moschetti, J Grahn, ...
2010 22nd International Conference on Indium Phosphide and Related Materials …, 2010
强制性开放获取政策： Swedish Research Council
Cryogenic operation of InAs/AlSb HEMT hybrid LNAs
G Moschetti, N Wadefalk, PÅ Nilsson, M Abbasi, L Desplanque, X Wallart, ...
2012 7th European Microwave Integrated Circuit Conference, 373-376, 2012
强制性开放获取政策： Swedish Research Council
可在其他位置公开访问的文章：4 篇
Anisotropic transport properties in InAs/AlSb heterostructures
G Moschetti, H Zhao, PÅ Nilsson, S Wang, A Kalabukhov, G Dambrine, ...
Applied Physics Letters 97 (24), 2010
强制性开放获取政策： Swedish Research Council
Kink effect and noise performance in isolated-gate InAs/AlSb high electron mobility transistors
BG Vasallo, H Rodilla, T González, G Moschetti, J Grahn, J Mateos
Semiconductor Science and Technology 27 (6), 065018, 2012
强制性开放获取政策： Government of Spain
DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiNx-film for early-protection against oxidation
G Moschetti, E Lefebvre, M Fagerlind, PÅ Nilsson, L Desplanque, ...
Solid-state electronics 87, 85-89, 2013
强制性开放获取政策： Swedish Research Council
Monte Carlo study of the noise performance of isolated-gate InAs/AlSb HEMTs
H Rodilla, T Gonzalez, G Moschetti, J Grahn, J Mateos
Semiconductor science and technology 27 (1), 015008, 2011
强制性开放获取政策： Government of Spain
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