| Thick boron doped diamond single crystals for high power electronics J Achard, F Silva, R Issaoui, O Brinza, A Tallaire, H Schneider, K Isoird, ... Diamond and Related Materials 20 (2), 145-152, 2011 | 104 | 2011 |
| Identification of etch‐pit crystallographic faces induced on diamond surface by H2/O2 etching plasma treatment J Achard, F Silva, O Brinza, X Bonnin, V Mille, R Issaoui, M Kasu, ... physica status solidi (a) 206 (9), 1949-1954, 2009 | 72 | 2009 |
| Boron acceptor concentration in diamond from excitonic recombination intensities J Barjon, T Tillocher, N Habka, O Brinza, J Achard, R Issaoui, F Silva, ... Physical Review B—Condensed Matter and Materials Physics 83 (7), 073201, 2011 | 57 | 2011 |
| Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices R Issaoui, J Achard, A Tallaire, F Silva, A Gicquel, R Bisaro, B Servet, ... Applied Physics Letters 100 (12), 2012 | 46 | 2012 |
| Dislocations and impurities introduced from etch-pits at the epitaxial growth resumption of diamond A Tallaire, J Barjon, O Brinza, J Achard, F Silva, V Mille, R Issaoui, ... Diamond and Related Materials 20 (7), 875-881, 2011 | 46 | 2011 |
| Growth of thick heavily boron-doped diamond single crystals: Effect of microwave power density R Issaoui, J Achard, F Silva, A Tallaire, A Tardieu, A Gicquel, MA Pinault, ... Applied physics letters 97 (18), 2010 | 46 | 2010 |
| Homoepitaxial boron‐doped diamond with very low compensation J Barjon, E Chikoidze, F Jomard, Y Dumont, MA Pinault‐Thaury, R Issaoui, ... physica status solidi (a) 209 (9), 1750-1753, 2012 | 45 | 2012 |
| Phosphorus-doped (113) CVD diamond: A breakthrough towards bipolar diamond devices MA Pinault-Thaury, S Temgoua, R Gillet, H Bensalah, I Stenger, F Jomard, ... Applied Physics Letters 114 (11), 2019 | 44 | 2019 |
| An assessment of contact metallization for high power and high temperature diamond Schottky devices S Koné, H Schneider, K Isoird, F Thion, J Achard, R Issaoui, S Msolli, ... Diamond and related materials 27, 23-28, 2012 | 39 | 2012 |
| Freestanding CVD boron doped diamond single crystals: A substrate for vertical power electronic devices? J Achard, R Issaoui, A Tallaire, F Silva, J Barjon, F Jomard, A Gicquel physica status solidi (a) 209 (9), 1651-1658, 2012 | 37 | 2012 |
| Epitaxial diamond on Ir/SrTiO3/Si (001): From sequential material characterizations to fabrication of lateral Schottky diodes JC Arnault, KH Lee, J Delchevalrie, J Penuelas, L Mehmel, O Brinza, ... Diamond and Related Materials 105, 107768, 2020 | 32 | 2020 |
| CVD diamond Schottky barrier diode, carrying out and characterization S Koné, G Civrac, H Schneider, K Isoird, R Issaoui, J Achard, A Gicquel Diamond and related materials 19 (7-9), 792-795, 2010 | 29 | 2010 |
| Influence of oxygen addition on the crystal shape of CVD boron doped diamond R Issaoui, J Achard, F Silva, A Tallaire, V Mille, A Gicquel physica status solidi (a) 208 (9), 2023-2027, 2011 | 26 | 2011 |
| Dislocation density reduction using overgrowth on hole arrays made in heteroepitaxial diamond substrates L Mehmel, R Issaoui, O Brinza, A Tallaire, V Mille, J Delchevalrie, ... Applied Physics Letters 118 (6), 2021 | 24 | 2021 |
| Performance Enhancement of Al2O3/H-Diamond MOSFETs Utilizing Vacuum Annealing and V2O5as a Surface Electron Acceptor DA Macdonald, KG Crawford, A Tallaire, R Issaoui, DAJ Moran IEEE Electron Device Letters 39 (9), 1354-1357, 2018 | 22 | 2018 |
| Ionized Physical Vapour Deposition combined with PECVD, for synthesis of carbon–metal nanocomposite thin films PY Tessier, R Issaoui, E Luais, M Boujtita, A Granier, B Angleraud Solid state sciences 11 (10), 1824-1827, 2009 | 18 | 2009 |
| Ohmic graphite-metal contacts on oxygen-terminated lightly boron-doped CVD monocrystalline diamond M De Feudis, V Mille, A Valentin, O Brinza, A Tallaire, A Tardieu, ... Diamond and Related Materials 92, 18-24, 2019 | 17 | 2019 |
| Thick and widened high quality heavily boron doped diamond single crystals synthetized with high oxygen flow under high microwave power regime R Issaoui, J Achard, L William, L Mehmel, MAP Thaury, F Bénédic Diamond and Related Materials 94, 88-91, 2019 | 16 | 2019 |
| Defect and threading dislocations in single crystal diamond: a focus on boron and nitrogen codoping R Issaoui, A Tallaire, A Mrad, L William, F Bénédic, MA Pinault-Thaury, ... physica status solidi (a) 216 (21), 1900581, 2019 | 11 | 2019 |
| Radiative lifetime of boron-bound excitons in diamond Y Kubo, S Temgoua, R Issaoui, J Barjon, N Naka Applied Physics Letters 114 (13), 2019 | 8 | 2019 |
Jocelyn AchardProfesseur en électronique et traitement du signal, Université Paris 13在 lspm.cnrs.fr 的电子邮件经过验证
