| A broadband planar quasi-Yagi antenna N Kaneda, WR Deal, Y Qian, R Waterhouse, T Itoh IEEE Transactions on Antennas and Propagation 50 (8), 1158-1160, 2002 | 505 | 2002 |
| First demonstration of amplification at 1 THz using 25-nm InP high electron mobility transistor process X Mei, W Yoshida, M Lange, J Lee, J Zhou, PH Liu, K Leong, A Zamora, ... IEEE Electron Device Letters 36 (4), 327-329, 2015 | 471 | 2015 |
| A new quasi-Yagi antenna for planar active antenna arrays WR Deal, N Kaneda, J Sor, Y Qian, T Itoh IEEE transactions on Microwave Theory and Techniques 48 (6), 910-918, 2000 | 462 | 2000 |
| Microstrip-fed quasi-Yagi antenna with broadband characteristics Y Qian, WR Deal, N Kaneda, T Itoh Electronics Letters 34 (23), 2194-2196, 1998 | 417 | 1998 |
| Sub 50 nm InP HEMT device with Fmax greater than 1 THz R Lai, XB Mei, WR Deal, W Yoshida, YM Kim, PH Liu, J Lee, J Uyeda, ... 2007 IEEE international electron devices meeting, 609-611, 2007 | 363 | 2007 |
| THz monolithic integrated circuits using InP high electron mobility transistors W Deal, XB Mei, KMKH Leong, V Radisic, S Sarkozy, R Lai IEEE Transactions on Terahertz Science and Technology 1 (1), 25-32, 2011 | 254 | 2011 |
| Integrated-antenna push-pull power amplifiers WR Deal, V Radisic, Y Qian, T Itoh IEEE Transactions on Microwave Theory and Techniques 47 (8), 1418-1425, 1999 | 170 | 1999 |
| Power amplification at 0.65 THz using INP HEMTs V Radisic, KMKH Leong, X Mei, S Sarkozy, W Yoshida, WR Deal IEEE Transactions on Microwave Theory and Techniques 60 (3), 724-729, 2011 | 154 | 2011 |
| Low noise amplification at 0.67 THz using 30 nm InP HEMTs WR Deal, K Leong, V Radisic, S Sarkozy, B Gorospe, J Lee, PH Liu, ... IEEE Microwave and Wireless Components Letters 21 (7), 368-370, 2011 | 147 | 2011 |
| Demonstration of a 0.48 THz amplifier module using InP HEMT transistors WR Deal, XB Mei, V Radisic, K Leong, S Sarkozy, B Gorospe, J Lee, ... IEEE Microwave and Wireless Components Letters 20 (5), 289-291, 2010 | 141 | 2010 |
| A uniplanar quasi-Yagi antenna with wide bandwidth and low mutual coupling characteristics Y Qian, WR Deal, N Kaneda, T Itoh IEEE Antennas and Propagation Society International Symposium. 1999 Digest …, 1999 | 130 | 1999 |
| WR1. 5 silicon micromachined waveguide components and active circuit integration methodology KMKH Leong, K Hennig, C Zhang, RN Elmadjian, Z Zhou, BS Gorospe, ... IEEE Transactions on Microwave theory and Techniques 60 (4), 998-1005, 2012 | 114 | 2012 |
| A 340–380 GHz integrated CB-CPW-to-waveguide transition for sub millimeter-wave MMIC packaging KMKH Leong, WR Deal, V Radisic, XB Mei, J Uyeda, L Samoska, A Fung, ... IEEE microwave and wireless components letters 19 (6), 413-415, 2009 | 114 | 2009 |
| A 0.85 THz low noise amplifier using InP HEMT transistors KMKH Leong, X Mei, W Yoshida, PH Liu, Z Zhou, M Lange, LS Lee, ... IEEE Microwave and Wireless Components Letters 25 (6), 397-399, 2015 | 106 | 2015 |
| A submillimeter-wave HEMT amplifier module with integrated waveguide transitions operating above 300 GHz L Samoska, WR Deal, G Chattopadhyay, D Pukala, A Fung, T Gaier, ... IEEE Transactions on Microwave Theory and Techniques 56 (6), 1380-1388, 2008 | 104 | 2008 |
| A 10-mW submillimeter-wave solid-state power-amplifier module V Radisic, WR Deal, KMKH Leong, XB Mei, W Yoshida, PH Liu, J Uyeda, ... IEEE Transactions on Microwave Theory and Techniques 58 (7), 1903-1909, 2010 | 97 | 2010 |
| 850 GHz receiver and transmitter front-ends using InP HEMT KMKH Leong, X Mei, WH Yoshida, A Zamora, JG Padilla, BS Gorospe, ... IEEE Transactions on Terahertz Science and Technology 7 (4), 466-475, 2017 | 85 | 2017 |
| Demonstration of sub-millimeter wave fundamental oscillators using 35-nm InP HEMT technology V Radisic, XB Mei, WR Deal, W Yoshida, PH Liu, J Uyeda, M Barsky, ... IEEE Microwave and Wireless Components Letters 17 (3), 223-225, 2007 | 84 | 2007 |
| Recent progress in scaling InP HEMT TMIC technology to 850 GHz WR Deal, K Leong, A Zamora, V Radisic, XB Mei 2014 IEEE MTT-S International Microwave Symposium (IMS2014), 1-3, 2014 | 71 | 2014 |
| A W-band InAs/AlSb low-noise/low-power amplifier WR Deal, R Tsai, MD Lange, JB Boos, BR Bennett, A Gutierrez IEEE Microwave and Wireless components letters 15 (4), 208-210, 2005 | 71 | 2005 |
Vesna Radisic在 ieee.org 的电子邮件经过验证
