| Effect of disorder on Raman scattering of single-layer S Mignuzzi, AJ Pollard, N Bonini, B Brennan, IS Gilmore, MA Pimenta, ... Physical Review B 91 (19), 195411, 2015 | 756 | 2015 |
| Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning CL Hinkle, M Milojevic, B Brennan, AM Sonnet, FS Aguirre-Tostado, ... Applied Physics Letters 94 (16), 2009 | 315 | 2009 |
| HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability S McDonnell, B Brennan, A Azcatl, N Lu, H Dong, C Buie, J Kim, ... ACS nano 7 (11), 10354-10361, 2013 | 309 | 2013 |
| Understanding and controlling Cu-catalyzed graphene nucleation: the role of impurities, roughness, and oxygen scavenging P Braeuninger-Weimer, B Brennan, AJ Pollard, S Hofmann Chemistry of materials 28 (24), 8905-8915, 2016 | 175 | 2016 |
| Nucleation control for large, single crystalline domains of monolayer hexagonal boron nitride via Si-doped Fe catalysts S Caneva, RS Weatherup, BC Bayer, B Brennan, SJ Spencer, K Mingard, ... Nano letters 15 (3), 1867-1875, 2015 | 169 | 2015 |
| A systematic study of (NH4) 2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As … É O’Connor, B Brennan, V Djara, K Cherkaoui, S Monaghan, ... Journal of Applied Physics 109 (2), 2011 | 169 | 2011 |
| Optimisation of the ammonium sulphide (NH4)2S passivation process on In0.53Ga0.47As B Brennan, M Milojevic, CL Hinkle, FS Aguirre-Tostado, G Hughes, ... Applied Surface Science 257 (9), 4082-4090, 2011 | 102 | 2011 |
| Identification and thermal stability of the native oxides on InGaAs using synchrotron radiation based photoemission B Brennan, G Hughes Journal of Applied Physics 108 (5), 2010 | 100 | 2010 |
| Quantitative characterization of defect size in graphene using Raman spectroscopy AJ Pollard, B Brennan, H Stec, BJ Tyler, MP Seah, IS Gilmore, D Roy Applied Physics Letters 105 (25), 2014 | 84 | 2014 |
| Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states RV Galatage, DM Zhernokletov, H Dong, B Brennan, CL Hinkle, ... Journal of Applied Physics 116 (1), 2014 | 78 | 2014 |
| In situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO 2 gate dielectric E OConnor, RD Long, K Cherkaoui, KK Thomas, F Chalvet, IM Povey, ... Applied Physics Letters 92 (2), 022902-022902-3, 2008 | 71 | 2008 |
| Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors RV Galatage, H Dong, DM Zhernokletov, B Brennan, CL Hinkle, ... Applied Physics Letters 99 (17), 2011 | 64 | 2011 |
| Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems S McDonnell, H Dong, JM Hawkins, B Brennan, M Milojevic, ... Applied Physics Letters 100 (14), 2012 | 61 | 2012 |
| The Characterization and Passivation of Fixed Oxide Charges and Interface States in the MOS System PK Hurley, É O'Connor, V Djara, S Monaghan, IM Povey, RD Long, ... IEEE Transactions on Device and Materials Reliability 13 (4), 429-443, 2013 | 55 | 2013 |
| Probing individual point defects in graphene via near-field Raman scattering S Mignuzzi, N Kumar, B Brennan, IS Gilmore, D Richards, AJ Pollard, ... Nanoscale 7 (46), 19413-19418, 2015 | 52 | 2015 |
| Electrical and chemical characteristics of Al2O3/InP metal-oxide-semiconductor capacitors RV Galatage, H Dong, DM Zhernokletov, B Brennan, CL Hinkle, ... Applied Physics Letters 102 (13), 2013 | 51 | 2013 |
| Half-cycle atomic layer deposition reaction study using O3 and H2O oxidation of Al2O3 on In0. 53Ga0. 47As B Brennan, M Milojevic, HC Kim, PK Hurley, J Kim, G Hughes, ... Electrochemical and Solid-State Letters 12 (6), H205, 2009 | 51 | 2009 |
| Indium diffusion through high-k dielectrics in high-k/InP stacks H Dong, W Cabrera, RV Galatage, S KC, B Brennan, X Qin, S McDonnell, ... Applied Physics Letters 103 (6), 2013 | 48 | 2013 |
| In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN B Brennan, X Qin, H Dong, J Kim, RM Wallace Applied Physics Letters 101 (21), 2012 | 47 | 2012 |
| Interdiffusion and barrier layer formation in thermally evaporated Mn/Cu heterostructures on SiO2 substrates JG Lozano, S Lozano-Perez, J Bogan, YC Wang, B Brennan, PD Nellist, ... Applied Physics Letters 98 (12), 2011 | 46 | 2011 |
Robert M. WallaceUniversity of Texas at Dallas在 utdallas.edu 的电子邮件经过验证
