| Vertical-Cavity Surface-Emitting Laser Devices ed H Li and K Iga M Osinski, W Nakwaski Berlin: Springer, 2003 | 324* | 2003 |
| Thermal conductivity of binary, ternary, and quaternary III‐V compounds W Nakwaski Journal of Applied Physics 64 (1), 159-166, 1988 | 218 | 1988 |
| Physics of Semiconductor Lasers 1North-Holland B Mroziewicz, M Bugajski, W Nakwaski Amsterdam, 1991 | 203* | 1991 |
| Effective masses of electrons and heavy holes in GaAs, InAs, A1As and their ternary compounds W Nakwaski Physica B: Condensed Matter 210 (1), 1-25, 1995 | 149 | 1995 |
| Thermal properties of etched-well surface-emitting semiconductor lasers W Nakwaski, M Osinski IEEE journal of quantum electronics 27 (6), 1391-1401, 1991 | 104 | 1991 |
| Optimization of 1.3 µm GaAs-based oxide-confined (GaIn)(NAs) vertical-cavity surface-emitting lasers for low-threshold room-temperature operation RP Sarzała, W Nakwaski Journal of Physics: Condensed Matter 16 (31), S3121, 2004 | 97 | 2004 |
| Erratum: Thermal resistance of top-surface-emitting vertical-cavity semiconductor lasers and monolithic two-dimensional arrays W Nakwaski, M Osiński Electronics Letters 28, 1283, 1992 | 89* | 1992 |
| Thermal aspects of efficient operation of vertical-cavity surface-emitting lasers W Nakwaski Optical and quantum electronics 28 (4), 335-352, 1996 | 66 | 1996 |
| Effective thermal conductivity analysis of 1.55 mu m InGaAsP/InP vertical-cavity top-surface-emitting microlasers M Osinski, W Nakwaski Electronics Letters 11 (29), 1015-1016, 1993 | 64 | 1993 |
| Thermal analysis of GaAs-AlGaAs etched-well surface-emitting double-heterostructure lasers with dielectric mirrors W Nakwaski, M Osinski IEEE Journal of quantum Electronics 29 (6), 1981-1995, 1993 | 62 | 1993 |
| 77 K operation of AlGaAs/GaAs quantum cascade laser at 9 um K Kosiel, M Bugajski, A Szerling, J Kubacka-Traczyk, P Karbownik, ... Photonics Letters of Poland 1 (1), 16-18, 2009 | 58 | 2009 |
| Transient thermal properties of high-power diode laser bars M Ziegler, F Weik, JW Tomm, T Elsaesser, W Nakwaski, RP Sarzała, ... Applied physics letters 89 (26), 2006 | 55 | 2006 |
| Thermal analysis of the catastrophic mirror damage in laser diodes W Nakwaski Journal of applied physics 57 (7), 2424-2430, 1985 | 55 | 1985 |
| Dynamical thermal properties of stripe-geometry laser diodes W Nakwaski IEE Proceedings I (Solid-State and Electron Devices) 131 (3), 94-102, 1984 | 53 | 1984 |
| III: Thermal Properties of Vertical-Cavity Surface-Emitting Semiconductor Lasers W Nakwaski, M Osiński Progress in Optics 38, 165-262, 1998 | 51 | 1998 |
| Temperature and thickness dependence of steam oxidation of AlAs in cylindrical mesa structures M Osinski, T Svimonishvili, GA Smolyakov, VA Smagley, P Mackowiak, ... IEEE Photonics Technology Letters 13 (7), 687-689, 2001 | 49 | 2001 |
| Oxidation kinetics of AlAs and (AlGa) As layers in GaAs-based diode laser structures: comparative analysis of available experimental data W Nakwaski, M Wasiak, P Maćkowiak, W Bedyk, M Osiński, A Passaseo, ... Semiconductor science and technology 19 (3), 333, 2003 | 43 | 2003 |
| Transverse modes in gain-guided vertical-cavity surface-emitting lasers W Nakwaski, RP Sarzała Optics communications 148 (1-3), 63-69, 1998 | 43 | 1998 |
| Numerical Self‐Consistent Analysis of VCSELs R Sarzała, T Czyszanowski, M Wasiak, M Dems, Ł Piskorski, W Nakwaski, ... Advances in Optical Technologies 2012 (1), 689519, 2012 | 42 | 2012 |
| Thermal analysis of closely-packed two-dimensional etched-well surface-emitting laser arrays M Osinski, W Nakwaski IEEE Journal of Selected Topics in Quantum Electronics 1 (2), 681-696, 1995 | 42 | 1995 |
