| A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels R Xie, P Montanini, K Akarvardar, N Tripathi, B Haran, S Johnson, T Hook, ... 2016 IEEE international electron devices meeting (IEDM), 2.7. 1-2.7. 4, 2016 | 191 | 2016 |
| Cobalt polishing with reduced galvanic corrosion at copper/cobalt interface using hydrogen peroxide as an oxidizer in colloidal silica-based slurries BC Peethala, HP Amanapu, URK Lagudu, SV Babu Journal of The Electrochemical Society 159 (6), H582, 2012 | 105 | 2012 |
| Citric acid as a complexing agent in chemical mechanical polishing slurries for cobalt films for interconnect applications R Popuri, KV Sagi, SR Alety, BC Peethala, H Amanapu, R Patlolla, ... ECS Journal of Solid State Science and Technology 6 (9), P594, 2017 | 78 | 2017 |
| Investigation of percarbonate based slurry chemistry for controlling galvanic corrosion during CMP of ruthenium MC Turk, SE Rock, HP Amanapu, LG Teugels, D Roy ECS Journal of Solid State Science and Technology 2 (5), P205, 2013 | 59 | 2013 |
| Potassium oleate as a dissolution and corrosion inhibitor during chemical mechanical planarization of chemical vapor deposited Co films for interconnect applications R Popuri, H Amanapu, CK Ranaweera, NK Baradanahalli, SV Babu ECS Journal of Solid State Science and Technology 6 (12), P845, 2017 | 58 | 2017 |
| Role of guanidine carbonate and crystal orientation on chemical mechanical polishing of ruthenium films HP Amanapu, KV Sagi, LG Teugels, SV Babu ECS Journal of Solid State Science and Technology 2 (11), P445, 2013 | 55 | 2013 |
| Parasitic resistance reduction strategies for advanced CMOS FinFETs beyond 7nm H Wu, O Gluschenkov, G Tsutsui, C Niu, K Brew, C Durfee, C Prindle, ... 2018 IEEE International Electron Devices Meeting (IEDM), 35.4. 1-35.4. 4, 2018 | 47 | 2018 |
| Use of anionic surfactants for selective polishing of silicon dioxide over silicon nitride films using colloidal silica-based slurries NK Penta, HP Amanapu, BC Peethala, SV Babu Applied surface science 283, 986-992, 2013 | 41 | 2013 |
| Role of hydrogen bonding on the adsorption of several amino acids on SiO2 and Si3N4 and selective polishing of these materials using ceria dispersions NK Penta, BC Peethala, HP Amanapu, A Melman, SV Babu Colloids and Surfaces A: Physicochemical and Engineering Aspects 429, 67-73, 2013 | 39 | 2013 |
| Silicon nitride film removal during chemical mechanical polishing using ceria-based dispersions PRV Dandu, BC Peethala, HP Amanapu, SV Babu Journal of The Electrochemical Society 158 (8), H763, 2011 | 32 | 2011 |
| Potassium permanganate-based slurry to reduce the galvanic corrosion of the Cu/Ru/TiN barrier liner stack during CMP in the BEOL interconnects KV Sagi, HP Amanapu, SR Alety, SV Babu ECS Journal of Solid State Science and Technology 5 (5), P256, 2016 | 31 | 2016 |
| Annealing and impurity effects in Co thin films for MOL contact and BEOL metallization J Kelly, V Kamineni, X Lin, A Pacquette, M Hopstaken, Y Liang, ... Journal of the Electrochemical Society 166 (1), D3100, 2018 | 25 | 2018 |
| Investigation of guanidine carbonate-based slurries for chemical mechanical polishing of Ru/TiN barrier films with minimal corrosion KV Sagi, HP Amanapu, LG Teugels, SV Babu ECS Journal of Solid State Science and Technology 3 (7), P227, 2014 | 18 | 2014 |
| Forming dual metallization interconnect structures in single metallization level HP Amanapu, CV Surisetty, RR Patlolla US Patent 10,559,530, 2020 | 15 | 2020 |
| Further investigation of slurry additives for selective polishing of SiO2 films over Si3N4 using ceria dispersions NK Penta, HP Amanapu, SV Babu ECS Journal of Solid State Science and Technology 4 (11), P5025, 2015 | 14 | 2015 |
| Self-Allancd Gate Contact (SAGC) for CMOS technology scaling beyond 7nm R Xie, C Park, R Conti, R Robison, H Zhou, I Saraf, A Carr, SSC Fan, ... 2019 Symposium on VLSI Technology, T148-T149, 2019 | 8 | 2019 |
| Skip via for metal interconnects HP Amanapu, P Bhosale, NV LiCausi, LW Liebmann, JJ McMahon, ... US Patent 10,978,388, 2021 | 7 | 2021 |
| Recessed interconnet line having a low-oxygen cap for facilitating a robust planarization process and protecting the interconnect line from downstream etch operations SSS Choi, HP Amanapu US Patent 10,832,946, 2020 | 5 | 2020 |
| Low-resistivity metallic interconnect structures with self-forming diffusion barrier layers HP Amanapu, CB Peethala, RR Patlolla, CC Yang, T Nogami US Patent 10,204,829, 2019 | 5 | 2019 |
| CMP: Consideration of stop-on selectivity in advanced node semiconductor manufacturing technology S Tsai, H Amanapu, R Xie, J Zhang, K Chung, C Labelle, H Huang, ... ECS Transactions 77 (4), 169, 2017 | 5 | 2017 |
