| Asymmetric InGaAs/InP MOSFETs with source/drain engineering J Mo, E Lind, LE Wernersson IEEE electron device letters 35 (5), 515-517, 2014 | 32 | 2014 |
| Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric G Roll, J Mo, E Lind, S Johansson, LE Wernersson Applied Physics Letters 106 (20), 2015 | 23 | 2015 |
| Grain-Boundary-Induced Strain and Distortion in Epitaxial Bilayer MoS2 Lattice A Nalin Mehta, J Mo, G Pourtois, A Dabral, B Groven, H Bender, P Favia, ... The Journal of Physical Chemistry C 124 (11), 6472-6478, 2020 | 21 | 2020 |
| Importance of the substrate’s surface evolution during the MOVPE growth of 2D-transition metal dichalcogenides J Mo, S El Kazzi, W Mortelmans, AN Mehta, S Sergeant, Q Smets, ... Nanotechnology 31 (12), 125604, 2020 | 18 | 2020 |
| Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors J Mo, E Lind, G Roll, LE Wernersson Applied Physics Letters 105 (3), 2014 | 17 | 2014 |
| InP drain engineering in asymmetric InGaAs/InP MOSFETs J Mo, E Lind, LE Wernersson IEEE Transactions on Electron Devices 62 (2), 501-506, 2014 | 14 | 2014 |
| A blind calibration model for I/Q imbalances of wideband zero-IF receivers X Peng, Z Wang, J Mo, C Wang, J Liu, F Yu Electronics 9 (11), 1868, 2020 | 12 | 2020 |
| A Ka-band low power consumption MMIC core chip for T/R modules M Zhou, J Mo, Z Wang AEU-International Journal of Electronics and Communications 91, 37-43, 2018 | 11 | 2018 |
| Design of a broadband Ka-band MMIC LNA using deep negative feedback loop G Wang, W Chen, J Liu, J Mo, H Chen, Z Wang, F Yu IEICE Electronics Express 15 (10), 20180317-20180317, 2018 | 7 | 2018 |
| Total ionizing dose effect and single event burnout of VDMOS with different inter layer dielectric and passivation J Mo, H Chen, L Wang, F Yu Journal of Electronic Testing 33, 255-259, 2017 | 7 | 2017 |
| A 11 mW 2.4 GHz 0.18 µm CMOS Transceivers for Wireless Sensor Networks B Hou, H Chen, Z Wang, J Mo, J Chen, F Yu, W Wang Sensors 17 (2), 223, 2017 | 7 | 2017 |
| A new capacitance-to-frequency converter for on-chip capacitance measurement and calibration in CMOS technology D Zhu, J Mo, S Xu, Y Shang, Z Wang, Z Huang, F Yu Journal of Electronic Testing 32, 393-397, 2016 | 5 | 2016 |
| The Design and Thermal Reliability Analysis of a High‐Efficiency K‐Band MMIC Medium‐Power Amplifier with Multiharmonic Matching Y Shang, H Xu, J Mo, Z Wang, X Xu, Z Tu, X Zhang, H Zheng, W Chen, ... Active and Passive Electronic Components 2016 (1), 6295405, 2016 | 5 | 2016 |
| Compact wideband dual circularly polarized L‐shaped slot antenna C Wei, M Zhou, K Ding, FX Yu, JJ Mo, XL Zhao Microwave and Optical Technology Letters 60 (7), 1685-1691, 2018 | 4 | 2018 |
| Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics J Mo, X Zhao, M Zhou Active and Passive Electronic Components 2017 (1), 9685685, 2017 | 4 | 2017 |
| 4–20 GHz low noise amplifier MMIC with on-chip switchable gate biasing circuit W Chen, Z Wang, H Chen, Z Huang, J Mo IEICE Electronics Express 14 (18), 20170711-20170711, 2017 | 4 | 2017 |
| Lattice matched and Pseudomorphic InGaAs MOSHEMT with fT of 200GHz JJ Mo, N Wichmann, Y Roelens, M Zaknoune, L Desplanque, X Wallart, ... 2012 International Conference on Indium Phosphide and Related Materials, 44-47, 2012 | 4 | 2012 |
| A highly linear 10 Gb/s MOS current mode logic driver with large output voltage swing based on an active inductor T Wang, M Zhou, J Liu, Z Wang, J Mo, H Chen, F Yu IEICE Electronics Express 17 (11), 20200160-20200160, 2020 | 3 | 2020 |
| The Design of Broadband LNA with Active Biasing based on Negative Technique G Wang, J Liu, S Xu, J Mo, Z Wang, F Yu Journal of Microelectronics, Electronic Components and Materials 48 (2), 115-120, 2018 | 3 | 2018 |
| Characterization of border traps in III-V MOSFETs using an RF transconductance method S Johansson, J Mo, E Lind 2013 Proceedings of the European Solid-State Device Research Conference …, 2013 | 3 | 2013 |
