| Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance CY Huang, CY Huang, TL Tsai, CA Lin, TY Tseng Applied physics letters 104 (6), 2014 | 153 | 2014 |
| Forming-free bipolar resistive switching in nonstoichiometric ceria films M Ismail, CY Huang, D Panda, CJ Hung, TL Tsai, JH Jieng, CA Lin, ... Nanoscale research letters 9, 1-8, 2014 | 102 | 2014 |
| Resistive switching characteristics of nickel silicide layer embedded HfO2 film D Panda, CY Huang, TY Tseng Applied Physics Letters 100 (11), 2012 | 92 | 2012 |
| Suppression of endurance degradation by utilizing oxygen plasma treatment in HfO2 resistive switching memory U Chand, CY Huang, JH Jieng, WY Jang, CH Lin, TY Tseng Applied Physics Letters 106 (15), 2015 | 86 | 2015 |
| Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer U Chand, KC Huang, CY Huang, TY Tseng IEEE Transactions on Electron Devices 62 (11), 3665-3670, 2015 | 77 | 2015 |
| High-speed and localized resistive switching characteristics of double-layer SrZrO3 memory devices MH Lin, MC Wu, CY Huang, CH Lin, TY Tseng Journal of Physics D: Applied Physics 43 (29), 295404, 2010 | 68 | 2010 |
| Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structure U Chand, KC Huang, CY Huang, CH Ho, CH Lin, TY Tseng Journal of Applied Physics 117 (18), 2015 | 53 | 2015 |
| Compact Ga-doped ZnO nanorod thin film for making high-performance transparent resistive switching memory CY Huang, YT Ho, CJ Hung, TY Tseng IEEE Transactions on Electron Devices 61 (10), 3435-3441, 2014 | 43 | 2014 |
| Mechanism of High Temperature Retention Property (up to 200 °C) in ZrO2-Based Memory Device With Inserting a ZnO Thin Layer U Chand, CY Huang, TY Tseng IEEE Electron Device Letters 35 (10), 1019-1021, 2014 | 41 | 2014 |
| Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architecture U Chand, CY Huang, D Kumar, TY Tseng Applied Physics Letters 107 (20), 2015 | 35 | 2015 |
| Improved resistive Switching characteristics by Al2O3 layers inclusion in HfO2-based RRAM devices CY Huang, JH Jieng, WY Jang, CH Lin, TY Tseng ECS Solid State Letters 2 (8), P63-P65, 2013 | 26 | 2013 |
| Resistive switching characteristics of Pt/CeOx/TiN memory device M Ismail, I Talib, CY Huang, CJ Hung, TL Tsai, JH Jieng, U Chand, CA Lin, ... Japanese Journal of Applied Physics 53 (6), 060303, 2014 | 20 | 2014 |
| Poly-Si nanowire nonvolatile memory with nanocrystal indium–gallium–zinc–oxide charge-trapping layer LC Chen, YC Wu, TC Lin, JY Huang, MF Hung, JH Chen, CY Chang IEEE electron device letters 31 (12), 1407-1409, 2010 | 20 | 2010 |
| 非挥发性存储器及其制造方法 TY Tseng, CY Huang, MC Wu CN Patent CN103,378,103 B, 2016 | 9* | 2016 |
| Improvement of Unipolar Resistive Switching Characteristics in Ti Embedded ZrO2 Thin Film CY Huang, U Chand, TY Tseng Applied Mechanics and Materials 543, 3839-3842, 2014 | 4 | 2014 |
| Fledge: flexible edge platforms enabled by in-memory computing K Datta, A Dutt, A Zaky, U Chand, D Singh, Y Li, JCY Huang, A Thean, ... 2020 Design, Automation & Test in Europe Conference & Exhibition (DATE …, 2020 | 3 | 2020 |
| 非揮發性記憶體及其製造方法 TY Tseng, CY Huang, MC Wu TW Patent I533,409, 2016 | | 2016 |
| 電阻式記憶體裝置及其製作方法 TY Tseng, CY Huang, CY Huang, TL Tsai TW Patent I520,394, 2016 | | 2016 |
| 記憶體元件與其製程 TY Tseng, CY Huang, JH Jiang TW Patent I500,193, 2015 | | 2015 |
| 电阻式存储装置及其制作方法 TY Tseng, CY Huang, CY Huang, TL Tsai CN Patent CN104,617,218 A, 2015 | | 2015 |
