| The role of surface oxygen in the growth of large single-crystal graphene on copper Y Hao, MS Bharathi, L Wang, Y Liu, H Chen, S Nie, X Wang, H Chou, ... Science 342 (6159), 720-723, 2013 | 1274 | 2013 |
| van der Waals heterostructures with high accuracy rotational alignment K Kim, M Yankowitz, B Fallahazad, S Kang, HCP Movva, S Huang, ... Nano letters 16 (3), 1989-1995, 2016 | 684 | 2016 |
| Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers S Larentis, B Fallahazad, E Tutuc Applied Physics Letters 101 (22), 2012 | 642 | 2012 |
| Tunable moiré bands and strong correlations in small-twist-angle bilayer graphene K Kim, A DaSilva, S Huang, B Fallahazad, S Larentis, T Taniguchi, ... Proceedings of the National Academy of Sciences 114 (13), 3364-3369, 2017 | 530 | 2017 |
| High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors HCP Movva, A Rai, S Kang, K Kim, B Fallahazad, T Taniguchi, ... ACS nano 9 (10), 10402-10410, 2015 | 307 | 2015 |
| Shubnikov–de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer : Landau Level Degeneracy, Effective Mass, and Negative Compressibility B Fallahazad, HCP Movva, K Kim, S Larentis, T Taniguchi, K Watanabe, ... Physical review letters 116 (8), 086601, 2016 | 207 | 2016 |
| Gate-tunable resonant tunneling in double bilayer graphene heterostructures B Fallahazad, K Lee, S Kang, J Xue, S Larentis, C Corbet, K Kim, ... Nano letters 15 (1), 428-433, 2015 | 196 | 2015 |
| Chemical potential and quantum Hall ferromagnetism in bilayer graphene K Lee, B Fallahazad, J Xue, DC Dillen, K Kim, T Taniguchi, K Watanabe, ... Science 345 (6192), 58-61, 2014 | 182 | 2014 |
| Band Alignment in WSe2–Graphene Heterostructures K Kim, S Larentis, B Fallahazad, K Lee, J Xue, DC Dillen, CM Corbet, ... ACS nano 9 (4), 4527-4532, 2015 | 180 | 2015 |
| Band Offset and Negative Compressibility in Graphene-MoS2 Heterostructures S Larentis, JR Tolsma, B Fallahazad, DC Dillen, K Kim, AH MacDonald, ... Nano letters 14 (4), 2039-2045, 2014 | 174 | 2014 |
| Scaling of Al2O3 dielectric for graphene field-effect transistors B Fallahazad, K Lee, G Lian, S Kim, CM Corbet, DA Ferrer, L Colombo, ... Applied Physics Letters 100 (9), 2012 | 139 | 2012 |
| Dielectric thickness dependence of carrier mobility in graphene with HfO2 top dielectric B Fallahazad, S Kim, L Colombo, E Tutuc Applied Physics Letters 97 (12), 2010 | 135 | 2010 |
| Direct measurement of the Fermi energy in graphene using a double-layer heterostructure S Kim, I Jo, DC Dillen, DA Ferrer, B Fallahazad, Z Yao, SK Banerjee, ... Physical review letters 108 (11), 116404, 2012 | 134 | 2012 |
| Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits S Larentis, B Fallahazad, HCP Movva, K Kim, A Rai, T Taniguchi, ... ACS nano 11 (5), 4832-4839, 2017 | 127 | 2017 |
| Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer HCP Movva, B Fallahazad, K Kim, S Larentis, T Taniguchi, K Watanabe, ... Physical review letters 118 (24), 247701, 2017 | 119 | 2017 |
| Experimental demonstration of phase modulation and motion sensing using graphene-integrated metasurfaces N Dabidian, S Dutta-Gupta, I Kholmanov, K Lai, F Lu, J Lee, M Jin, ... Nano Letters 16 (6), 3607-3615, 2016 | 110 | 2016 |
| High performance wire‐array silicon solar cells O Gunawan, K Wang, B Fallahazad, Y Zhang, E Tutuc, S Guha Progress in Photovoltaics: Research and Applications 19 (3), 307-312, 2011 | 109 | 2011 |
| Large effective mass and interaction-enhanced Zeeman splitting of -valley electrons in S Larentis, HCP Movva, B Fallahazad, K Kim, A Behroozi, T Taniguchi, ... Physical Review B 97 (20), 201407, 2018 | 102 | 2018 |
| Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene–WSe2 Heterostructures GW Burg, N Prasad, B Fallahazad, A Valsaraj, K Kim, T Taniguchi, ... Nano letters 17 (6), 3919-3925, 2017 | 67 | 2017 |
| Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET S Kang, B Fallahazad, K Lee, H Movva, K Kim, CM Corbet, T Taniguchi, ... Electron Device Letters 36 (4), 405 - 407, 2015 | 66 | 2015 |
Emanuel TutucProfessor, The University of Texas at Austin在 mer.utexas.edu 的电子邮件经过验证
