| Strain engineering of WS2, WSe2, and WTe2 B Amin, TP Kaloni, U Schwingenschlögl RSC Advances 4 (65), 34561-34565, 2014 | 328 | 2014 |
| Heterostructures of transition metal dichalcogenides B Amin, N Singh, U Schwingenschlögl Physical review B 92 (7), 075439, 2015 | 229 | 2015 |
| Layered graphene/GaS van der Waals heterostructure: Controlling the electronic properties and Schottky barrier by vertical strain CVN Khang D. Pham, Nguyen N. Hieu, Huynh V. Phuc, I. A. Fedorov, C. A. Duque ... Applied Physics Letters 113 (17), 171605, 2018 | 184 | 2018 |
| Ab initio study of the bandgap engineering of Al1− xGaxN for optoelectronic applications B Amin, I Ahmad, M Maqbool, S Goumri-Said, R Ahmad Journal of Applied Physics 109 (2), 2011 | 183 | 2011 |
| Rashba spin splitting and photocatalytic properties of GeC−MSSe (M= Mo, W) van der Waals heterostructures HU Din, M Idrees, A Albar, M Shafiq, I Ahmad, CV Nguyen, B Amin Physical Review B 100 (16), 165425, 2019 | 162 | 2019 |
| Optoelectronic and solar cell applications of Janus monolayers and their van der Waals heterostructures M Idrees, HU Din, R Ali, G Rehman, T Hussain, CV Nguyen, I Ahmad, ... Physical Chemistry Chemical Physics 21 (34), 18612-18621, 2019 | 155 | 2019 |
| Graphene/WSeTe van der Waals heterostructure: Controllable electronic properties and Schottky barrier via interlayer coupling and electric field TV Vu, NV Hieu, HV Phuc, NN Hieu, HD Bui, M Idrees, B Amin, ... Applied Surface Science 507, 145036, 2020 | 148 | 2020 |
| Investigation of structural and optoelectronic properties of BaThO3 G Murtaza, I Ahmad, B Amin, A Afaq, M Maqbool, J Maqssod, I Khan, ... Optical Materials 33 (3), 553-557, 2011 | 141 | 2011 |
| Interfacial characteristics, Schottky contact, and optical performance of a van der Waals heterostructure: Strain engineering and electric field tunability HTT Nguyen, MM Obeid, A Bafekry, M Idrees, TV Vu, HV Phuc, NN Hieu, ... Physical Review B 102 (7), 075414, 2020 | 123 | 2020 |
| Electronic structure, optical and photocatalytic performance of novel SiC-MX2 (M= Mo, W and X=S, Se) van der Waals heterostructures BA H. U-Din, M. Idrees, Gul Rehman, Chuong V. Nguyen, Li-Yong Gan, Iftikhar ... Physical Chemistry Chemical Physics, 2018 | 86 | 2018 |
| Interlayer coupling and electric field controllable Schottky barriers and contact types in graphene/ heterostructures CV Nguyen, M Idrees, HV Phuc, NN Hieu, NTT Binh, B Amin, TV Vu Physical Review B 101 (23), 235419, 2020 | 85 | 2020 |
| Materials properties of out-of-plane heterostructures of MoS2-WSe2 and WS2-MoSe2 B Amin, TP Kaloni, G Schreckenbach, MS Freund Applied Physics Letters 108 (6), 063105, 2016 | 81 | 2016 |
| Electronic properties of WS2 and WSe2 monolayers with biaxial strain: a first-principles study D Muoi, NN Hieu, HTT Phung, HV Phuc, B Amin, BD Hoi, NV Hieu, ... Chemical Physics 519, 69-73, 2019 | 76 | 2019 |
| Structural and electronic properties of a van der Waals heterostructure based on silicene and gallium selenide: effect of strain and electric field PTT Le, NN Hieu, LM Bui, HV Phuc, BD Hoi, B Amin, CV Nguyen Physical Chemistry Chemical Physics 20 (44), 27856-27864, 2018 | 75 | 2018 |
| Intriguing electronic structures and optical properties of two-dimensional van der Waals heterostructures of Zr2CT2 (T= O, F) with MoSe2 and WSe2 G Rehman, SA Khan, B Amin, I Ahmad, LY Gan, M Maqbool Journal of Materials Chemistry C 6 (11), 2830-2839, 2018 | 75 | 2018 |
| Opto-electronic response of spinels MgAl2O4 and MgGa2O4 through modified Becke-Johnson exchange potential B Amin, R Khenata, A Bouhemadou, I Ahmad, M Maqbool Physica B: Condensed Matter 407 (13), 2588-2592, 2012 | 74 | 2012 |
| Cs 2 NaGaBr 6: a new lead-free and direct band gap halide double perovskite Y Saeed, B Amin, H Khalil, F Rehman, H Ali, MI Khan, A Mahmood, ... RSC advances 10 (30), 17444-17451, 2020 | 68* | 2020 |
| Strain engineering of electronic structures and photocatalytic responses of MXenes functionalized by oxygen S. A. Khan, B. Amin, Li-Yong Gan, and Iftikhar Ahmad Physical Chemistry Chemical Physics 19, 14738-14744, 2017 | 65 | 2017 |
| Bandgap investigations and the effect of the In and Al concentration on the optical properties of InxAl1−xN M Maqbool, B Amin, I Ahmad JOSA B 26 (11), 2181-2184, 2009 | 62 | 2009 |
| First principles study of the electronic properties and Schottky barrier in vertically stacked graphene on the Janus MoSeS under electric field Khang D. Pham, Nguyen N. Hieu, Huynh V. Phuc, Bui D. Hoi, Victor V. Ilysov ... Computational Materials Science 153, 438-444, 2018 | 59 | 2018 |
