受强制性开放获取政策约束的文章 - SHIVENDRA SINGH PARIHAR了解详情
无法在其他位置公开访问的文章：4 篇
BSIM compact model of quantum confinement in advanced nanosheet FETs
A Dasgupta, SS Parihar, P Kushwaha, H Agarwal, MY Kao, S Salahuddin, ...
IEEE Transactions on Electron Devices 67 (2), 730-737, 2020
强制性开放获取政策： Department of Science & Technology, India
Cryogenic CMOS for Quantum Processing: 5-nm FinFET-Based SRAM Arrays at 10 K
SS Parihar, VM van Santen, S Thomann, G Pahwa, YS Chauhan, ...
IEEE Transactions on Circuits and Systems I: Regular Papers, 2023
强制性开放获取政策： German Research Foundation
Characterization and Global Parameter Extraction of bulk MOSFETs using BSIM-BULK Model
SS Parihar, C Jha, R Singh, R Gurjar, A Dixit
2018 5th IEEE Uttar Pradesh Section International Conference on Electrical …, 2018
强制性开放获取政策： Department of Science & Technology, India
Characterization and Modeling of 14-/16-nm FinFET-Based LDMOS
A Kar, SS Parihar, JZ Huang, H Zhang, W Wang, K Imura, YS Chauhan
IEEE Transactions on Electron Devices, 2023
强制性开放获取政策： Department of Science & Technology, India
可在其他位置公开访问的文章：6 篇
Evaluation of 10-nm Bulk FinFET RF Performance—Conventional Versus NC-FinFET
R Singh, K Aditya, SS Parihar, YS Chauhan, R Vega, TB Hook, A Dixit
IEEE Electron Device Letters 39 (8), 1246-1249, 2018
强制性开放获取政策： Department of Science & Technology, India
Compact Model for Geometry Dependent Mobility in Nanosheet FETs
A Dasgupta, SS Parihar, H Agarwal, P Kushwaha, YS Chauhan, C Hu
IEEE Electron Device Letters 41 (3), 313-316, 2020
强制性开放获取政策： Department of Science & Technology, India
Cryogenic Embedded System to Support Quantum Computing: From 5nm FinFET to Full Processor
PR Genssler, F Klemme, SS Parihar, S Brandhofer, G Pahwa, I Polian, ...
IEEE Transactions on Quantum Engineering, 2023
强制性开放获取政策： German Research Foundation
Design Automation for Cryogenic CMOS Circuits
VM van Santen, M Walter, F Klemme, SS Parihar, G Pahwa, YS Chauhan, ...
2023 60th ACM/IEEE Design Automation Conference (DAC), 1-6, 2023
强制性开放获取政策： European Commission
A Comprehensive RF Characterization and Modeling Methodology for the 5nm Technology Node FinFETs
SS Parihar, A Pampori, P Dwivedi, J Huang, W Wang, K Imura, C Hu, ...
IEEE Journal of the Electron Devices Society, 2023
强制性开放获取政策： Department of Science & Technology, India
Cryogenic In-Memory Computing for Quantum Processors Using Commercial 5nm FinFETs
SS Parihar, S Thomann, G Pahwa, YS Chauhan, H Amrouch
IEEE Open Journal of Circuits and Systems, 2023
强制性开放获取政策： US Department of Defense, German Research Foundation
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